Thermal Stability of Defect Centers in n- and p-Type 4H-SiC Epilayers Generated by Irradiation with High-Energy Electrons

2010 ◽  
Vol 645-648 ◽  
pp. 423-426 ◽  
Author(s):  
Sergey A. Reshanov ◽  
Svetlana Beljakowa ◽  
Bernd Zippelius ◽  
Gerhard Pensl ◽  
Katsunori Danno ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Systematic Study ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
High Energy ◽  
Defect Centers ◽  
High Energy Electrons ◽  
Transient Spectroscopy ◽  
P Type ◽  
Thermal Stability Of

This paper comprises a systematic study of the thermal stability of defect centers observed in n- and p-type 4H-SiC by deep level transient spectroscopy (DLTS); the defects are generated by irradiation with high-energy electrons of 170 keV or 1 MeV.

Deep Levels in As-Grown and Electron-Irradiated P-type 4H-SiC

2006 ◽  
Vol 911 ◽  
Author(s):  
Katsunori Danno ◽  
Tsunenobu Kimoto
Keyword(s):  
Cross Section ◽  
Deep Level Transient Spectroscopy ◽  
Capture Cross Section ◽  
Arrhenius Plot ◽  
Deep Level ◽  
Deep Levels ◽  
Emission Time ◽  
Transient Spectroscopy ◽  
P Type ◽  
Thermal Stability Of

AbstractDeep levels in as-grown and electron-irradiated p-type 4H-SiC have been investigated by deep level transient spectroscopy (DLTS). Three hole traps, namely HK2, HK3, and HK4, could be detected in the temperature range from 350K to 700K. Activation energies of the hole traps were estimated to be 0.84 eV for HK2, 1.27 eV for HK3, and 1.44 eV for HK4 from the Arrhenius plot of emission-time constants assuming temperature-independent capture cross section. By double-correlated DLTS (DDLTS), they were revealed to be donor-like (+/0) traps. The concentrations of HK3 and HK4 centers were clearly increased by low-energy (116 keV) electron irradiation. Based on thermal stability of the HK3 and HK4 centers up to 1350°C and the dependence of HK4 concentration on the electron fluence, they may originate from a complex including defect(s) caused by carbon displacement.

Iron-Related Defect Centers in 3C-SiC

2011 ◽  
Vol 679-680 ◽  
pp. 265-268 ◽  
Author(s):  
Thanos Tsirimpis ◽  
S. Beljakova ◽  
Bernd Zippelius ◽  
Heiko B. Weber ◽  
Gerhard Pensl ◽  
...  
Keyword(s):  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Implantation Damage ◽  
Defect Centers ◽  
Related Defect ◽  
Transient Spectroscopy ◽  
P Type

p-type 3C-SiC samples were implanted by iron (Fe) and investigated by means of deep level transient spectroscopy (DLTS). Corresponding argon (Ar) profiles with similar implantation damage were implanted in order to distinguish between iron-related defects and defects caused by implantation damage. Two donor-like iron-related centers were identified in p-type 3C-SiC.

Search for Hydrogen Related Defects in p-Type 6H and 4H-SiC

2008 ◽  
Vol 600-603 ◽  
pp. 421-424
Author(s):  
Giovanni Alfieri ◽  
Tsunenobu Kimoto
Keyword(s):  
Thermal Stability ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Electrical Characterization ◽  
Annealing Treatment ◽  
Microscopic Structure ◽  
Electric Field Dependence ◽  
Emission Time ◽  
Transient Spectroscopy ◽  
P Type

Al-doped 4H and 6H epitaxial layers have been implanted with 200 keV hydrogen or irradiated with 1 MeV electrons. Heat treatments have been carried out up to 1000 °C and electrical characterization, by means of deep level transient spectroscopy (DLTS), has been performed after every annealing treatment in the 100-750 K temperature range. We have detected several deep levels and the possible involvement of hydrogen in the microscopic structure of these defects is discussed in the light of their thermal stability and previous results found in the literature. All the detected defects, except for a level located at 0.55 eV above the valence band (Ev), do not display any electric field dependence of their emission time constant.

Thermal Histories of Defect Centers as Measured by Low Temperature Photoluminescence in n- and p-Type 4H SiC Epilayers Generated by Irradiation with 170 keV or 1 MeV Electrons

2010 ◽  
Vol 645-648 ◽  
pp. 419-422
Author(s):  
Fei Yan ◽  
Robert P. Devaty ◽  
Wolfgang J. Choyke ◽  
Katsunori Danno ◽  
Giovanni Alfieri ◽  
...  
Keyword(s):  
Low Temperature ◽  
Ground State ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Separate Paper ◽  
Defect Centers ◽  
Thermal Histories ◽  
Transient Spectroscopy ◽  
P Type ◽  
Low Temperature Photoluminescence

In this paper we describe an effort to find correlations between low temperature photoluminescence spectroscopy (LTPL) and deep level transient spectroscopy (DLTS) of electron irradiated samples annealed from 25 °C to 1700 °C in 100 °C steps. We report on thermal histories of defect centers created by 170 keV and 1 MeV electron irradiation, as observed by LTPL only. The DLTS results on "twin" samples are presented in a separate paper. Our results indicate that in n-type 4H SiC there is no correlation between the Z1/Z2 center in DLTS and the L1 peak of the DI center seen in LTPL. In p-type 4H SiC we do not find a correlation between a 350 meV DLTS peak above the valence band and the LTPL L1 peak of the DI center. Consequently, we cannot find evidence for a 350 meV ground state postulated in the “Pseudo–Donor” model [3].

Shallow Defects Observed in As-Grown and Electron-Irradiated or He+-Implanted Al-Doped 4H-SiC Epilayers

2010 ◽  
Vol 645-648 ◽  
pp. 427-430 ◽  
Author(s):  
Svetlana Beljakowa ◽  
Sergey A. Reshanov ◽  
Bernd Zippelius ◽  
Michael Krieger ◽  
Gerhard Pensl ◽  
...  
Keyword(s):  
Deep Level ◽  
High Energy ◽  
Annealed Sample ◽  
Double Peak ◽  
Double Peak Structure ◽  
Peak Structure ◽  
Defect Centers ◽  
High Energy Electrons ◽  
Transient Spectroscopy ◽  
Dlts Spectra

Aluminum-doped 4H-SiC samples were either irradiated with high-energy electrons (170 keV or 1 MeV) or implanted with a box-shaped He+-profile. Admittance spectroscopy (AS) and deep level transient spectroscopy (DLTS) were employed to search for defect centers. AS spectra of as-grown as well as of electron-irradiated (170 keV or 1 MeV) 4H-SiC epilayers reveal the Al acceptor (ΔE(Al) = 200 meV) and an unknown defect (ΔE(SB) = 177 meV), while AS spectra of the He+-implanted and annealed sample show in addition to the Al-acceptor two energetically deeper acceptor-like defect centers (ΔE(RE3) = 255 meV and ΔE(KR3) = 375 meV). The KR3-center is not directly formed by the He+-implantation, it requires an annealing process. The DLTS spectra of the He+-implanted and annealed sample resolve a double-peak structure of the KR3-defect (ΔE(KR3A) = 380 meV and ΔE(KR3B) = 410 meV).

Deep Hole Traps in As-Grown 4H-SiC Epilayers Investigated by Deep Level Transient Spectroscopy

2006 ◽  
Vol 527-529 ◽  
pp. 501-504 ◽  
Author(s):  
Katsunori Danno ◽  
Tsunenobu Kimoto
Keyword(s):  
Detection Limit ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Low Energy ◽  
Deep Hole ◽  
Meaningful Change ◽  
Low Energy Electron ◽  
Transient Spectroscopy ◽  
P Type ◽  
Thermal Stability Of

Deep levels in as-grown p-type 4H-SiC epilayers have been investigated by DLTS. Three deep hole traps (HK2, HK3 and HK4) can be detected by DLTS in the temperature range from 350K to 700K. They are energetically located at 0.84 eV (HK2), 1.27 eV (HK3) and 1.44 eV (HK4) above the valence band edge. The activation energy of the traps does not show any meaningful change regardless of applied electric field, indicating that the charge state of the deep hole traps may be neutral after hole emission (donor-like). By the low-energy electron irradiation, the HK3 and HK4 concentrations are significantly increased, suggesting that the origins of the HK3 and HK4 may be related to carbon displacement. Study on the thermal stability of these hole traps has revealed that the trap concentrations of HK3 and HK4 are reduced to below the detection limit (1-2 × 1011 cm-3) by annealing at 1350°C. The HK2 is thermally more stable than HK3 and HK4, and becomes lower than the detection limit by annealing at 1550°C.

Iron-Related Defect Centers in 4H-SiC Detected by Deep Level Transient Spectroscopy

2011 ◽  
Vol 679-680 ◽  
pp. 257-260 ◽  
Author(s):  
Lia Trapaidze ◽  
R. Hollweck ◽  
Svetlana Beljakowa ◽  
Bernd Zippelius ◽  
Heiko B. Weber ◽  
...  
Keyword(s):  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Electrical Behavior ◽  
Implantation Damage ◽  
Defect Centers ◽  
Related Defect ◽  
Transient Spectroscopy ◽  
P Type

Fe-implanted n-/p-type 4H-SiC samples were investigated by deep level transient spectroscopy (DLTS). In order to be able to separate Fe-related defect centers from defects caused by implantation damage, a corresponding Ar-profile was implanted. No Fe-related defects were observed in n-type 4H-SiC, while two Fe-related centers could be identified in p-type 4H-SiC. The electrical behavior of these centers is donor-like.

Point Defects in 4H-SiC Epilayers Introduced by 4.5 MeV Electron Irradiation and their Effect on Power JBS SiC Diode Characteristics

2013 ◽  
Vol 205-206 ◽  
pp. 451-456 ◽  
Author(s):  
Pavel Hazdra ◽  
Vít Záhlava ◽  
Jan Vobecký
Keyword(s):  
Electron Irradiation ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Radiation Defects ◽  
Electrical Parameters ◽  
Power Diodes ◽  
Defect Centers ◽  
Measurement Results ◽  
Transient Spectroscopy ◽  
State Resistance

Electronic properties of radiation damage produced in 4H-SiC by electron irradiation and its effect on electrical parameters of Junction Barrier Schottky (JBS) diodes were investigated. 4H‑SiC N‑epilayers, which formed the low‑doped N-base of JBS power diodes, were irradiated with 4.5 MeV electrons with fluences ranging from 1.5x1014 to 5x1015 cm-2. Radiation defects were then characterized by capacitance deep-level transient spectroscopy and C-V measurement. Results show that electron irradiation introduces two defect centers giving rise to acceptor levels at EC‑0.39 and EC‑0.60 eV. Introduction rate of these centers is 0.24 and 0.65 cm‑1, respectively. These radiation defects have a negligible effect on blocking and dynamic characteristics of irradiated diodes, however, the acceptor character of introduced deep levels and their high introduction rates deteriorate diode’s ON-state resistance already at fluences higher than 1x1015 cm‑2.

Deep Defects in 3C-SiC Generated by H+- and He+-Implantation or by Irradiation with High-Energy Electrons

2010 ◽  
Vol 645-648 ◽  
pp. 439-442 ◽  
Author(s):  
Michael Weidner ◽  
Lia Trapaidze ◽  
Gerhard Pensl ◽  
Sergey A. Reshanov ◽  
Adolf Schöner ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Charge State ◽  
Cross Section ◽  
Capture Cross Section ◽  
Pulse Length ◽  
High Energy ◽  
Capture Cross ◽  
Intrinsic Defects ◽  
High Energy Electrons ◽  
Thermal Stability Of

Intrinsic defects in 3C-SiC are generated by implantation of H+- and He+-ions or irra¬diation with high energy electrons. The defect parameters and the thermal stability of the observed defects are determined. The capture-cross-section of the W6-center is directly measured by variation of the filling pulse length. The charge state of the W6-center is obtained from double-correlated DLTS investigations according to the Poole-Frenkel effect.

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