Forming and Investigation of Model Grain Boundaries Structure, Obtained by Solid-Phase Single Crystals Intergrowing

1991 ◽  
Vol 62-64 ◽  
pp. 357-358
Author(s):  
E.A. Stepantsov ◽  
A.L. Vasiliev
Keyword(s):  
Grain Boundaries ◽  
Single Crystals ◽  
Solid Phase

The observation of defects on (100) CdTe surfaces by chemical etching

1992 ◽  
Vol 50 (2) ◽  
pp. 1424-1425
Author(s):  
M.E. Lee
Keyword(s):  
Single Crystal ◽  
Grain Boundaries ◽  
Single Crystals ◽  
Chemical Etching ◽  
Crystalline Perfection ◽  
Crystalline Defects ◽  
High Incidence ◽  
Crystallographic Defects ◽  
Cdznte Substrates ◽  
Device Technology

The crystalline perfection of bulk CdTe substrates plays an important role in their use in infrared device technology. The application of chemical etchants to determine crystal polarity or the density and distribution of crystallographic defects in (100) CdTe is not well understood. The lack of data on (100) CdTe surfaces is a result of the apparent difficulty in growing (100) CdTe single crystal substrates which is caused by a high incidence of twinning. Many etchants have been reported to predict polarity on one or both (111) CdTe planes but are considered to be unsuitable as defect etchants. An etchant reported recently has been considered to be a true defect etchant for CdTe, MCT and CdZnTe substrates. This etchant has been reported to reveal crystalline defects such as dislocations, grain boundaries and inclusions in (110) and (111) CdTe. In this study the effect of this new etchant on (100) CdTe surfaces is investigated.The single crystals used in this study were (100) CdTe as-cut slices (1mm thickness) from Bridgman-grown ingots.

scholarly journals Internal melt figures in ice by rapid adiabatic compression

1994 ◽  
Vol 40 (134) ◽  
pp. 132-134
Author(s):  
R.E. Gagnon ◽  
C. Tulk ◽  
H. Kiefte
Keyword(s):  
Phase Transformations ◽  
Grain Boundaries ◽  
Single Crystals ◽  
Adiabatic Compression ◽  
Air Bubbles ◽  
Water Ice ◽  
Deep Focus ◽  
And Behavior ◽  
First Time

AbstractSingle crystals and bicrystals of water ice have been adiabatically pressurized to produce, and clearly illustrate, two types of internal melt figures: (1) dendritic figures that grow from nucleation imperfections on the specimen’s surface, or from air bubbles at grain boundaries, into the ice as pressure is elevated; and (2) compression melt fractures, flat liquid-filled disks, that nucleate at imperfections in the crystal and grow with the application of pressure eventually to sprout dendritic fingers at the periphery. The transparency of the ice permitted visualization of the growth and behavior of the figures, and this could be an important tool in understanding the role of phase transformations in deep-focus earthquakes. Correlation between figure size and pressure is noted for the first time.

X-Ray Reflectivity Study of Single- and Bicrystals of Gold

1990 ◽  
Vol 208 ◽  
Author(s):  
M. R. Fitzsimmons ◽  
E. Burkel ◽  
J. Peisl
Keyword(s):  
Grain Boundary ◽  
Grain Boundaries ◽  
Single Crystals ◽  
Diffuse Scattering ◽  
Direct Evidence ◽  
X Ray ◽  
Specular Reflectivity ◽  
Boundary Measurements

ABSTRACTX-ray reflectivity techniques have been used to characterize the surfaces of 0.4µm thick Au films epitaxially grown on single-crystals of NaCl. Measurements of both the specular and non-specular reflectivity suggest that the Au surface is very rough. The nonspecular reflectivity provides valuable information about the correlation of the heights at different points on the surface. The first in situ reflectivity study of the formation and destruction of a grain boundary shows direct evidence for the existence of diffuse scattering from the grain boundary. Measurements of several [0011 twist grain boundaries suggest that the roughness and texture of an interface depends upon the geometrical orientation of the surrounding substrates.

Optical and Structural Properties of MeV Erbium Implanted LiNbO3

1993 ◽  
Vol 316 ◽  
Author(s):  
M. Fleuster ◽  
CH. Buchal ◽  
E. Snoeks ◽  
A. Polman
Keyword(s):  
Surface Layer ◽  
Single Crystals ◽  
Structural Properties ◽  
Maximum Concentration ◽  
Solid Phase ◽  
Optically Active ◽  
Layer By Layer ◽  
Warm Up

ABSTRACTLiNbO3 single crystals were implanted with Er ions at 3.5 MeV with fluences up to 3*1016 Er/cm2 and subsequently annealed at 1060°C. The warm-up rate of the sample determines whether the implanted, amorphized surface layer recrystallizes via columnar or via layer-by-layer solid phase epitaxial (SPE) growth. The maximum concentration of optically active Er ions is determined to be 0.18 at.%.

Dislocations and grain boundaries in semiconducting rubrene single-crystals

2006 ◽  
Vol 290 (2) ◽  
pp. 479-484 ◽  
Author(s):  
B.D. Chapman ◽  
A. Checco ◽  
R. Pindak ◽  
T. Siegrist ◽  
C. Kloc
Keyword(s):  
Grain Boundaries ◽  
Single Crystals

scholarly journals Characterization of Defects and Stress in Polycrystalline Silicon Thin Films on Glass Substrates by Raman Microscopy

2011 ◽  
Vol 2011 ◽  
pp. 1-14 ◽  
Author(s):  
Kuninori Kitahara ◽  
Toshitomo Ishii ◽  
Junki Suzuki ◽  
Takuro Bessyo ◽  
Naoki Watanabe
Keyword(s):  
Grain Boundaries ◽  
Polycrystalline Silicon ◽  
Solid Phase ◽  
Raman Microscopy ◽  
Laser Crystallization ◽  
Local Vibration ◽  
Optical Phonon Mode ◽  
Glass Substrates ◽  
Silicon Thin Films ◽  
Si Films

Raman microscopy was applied to characterize polycrystalline silicon (poly-Si) on glass substrates for application as thin-film transistors (TFTs) integrated on electronic display panels. This study examines the crystallographic defects and stress in poly-Si films grown by industrial techniques: solid phase crystallization and excimer laser crystallization (ELC). To distinguish the effects of defects and stress on the optical-phonon mode of the Si–Si bond, a semiempirical analysis was performed. The analysis was compared with defect images obtained through electron microscopy and atomic force microscopy. It was found that the Raman intensity for the ELC film is remarkably enhanced by the hillocks and ridges located around grain boundaries, which indicates that Raman spectra mainly reflect the situation around grain boundaries. A combination of the hydrogenation of films and the observation of the Si-hydrogen local-vibration mode is useful to support the analysis on the defects. Raman microscopy is also effective for detecting the plasma-induced damage suffered during device processing and characterizing the performance of Si layer in TFTs.

Hydrogen Diffusion in Chalcopyrite Solar Cell Materials

1998 ◽  
Vol 513 ◽  
Author(s):  
A. Weidinger ◽  
J. Krauser ◽  
Th. Riedle ◽  
R. Klenk ◽  
M. Ch. Lux-Steiner ◽  
...  
Keyword(s):  
Thin Films ◽  
Solar Cell ◽  
Grain Boundaries ◽  
Single Crystals ◽  
Diffusion Coefficients ◽  
Transport Process ◽  
Hydrogen Diffusion ◽  
Intrinsic Diffusion ◽  
Ion Energy ◽  
Temperature Range

ABSTRACTHydrogen diffusion in CuInSe 2 single crystals and CuInS2 thin films was studied by measuring the spreading of implantation profiles upon annealing. Deep implantation with an ion energy of 10 keV and sub-surface implantation with 300 eV were applied. The diffusion coefficients in both materials were found to be in the order of 10-14 to 10-13 cm2/s in the temperature range between 400 and 520 K.These fairly low diffusivities are typical for a trap and release transport process rather than intrinsic diffusion of interstitial hydrogen. In the polycrystalline CuInS2 films, hydrogen leaves the sample through the grain boundaries.

Properties of Iron Atoms at Grain Boundaries in Fe and Fe72Al28

1998 ◽  
Vol 527 ◽  
Author(s):  
O. Schneeweiss ◽  
I. Turek ◽  
J. Čermák ◽  
P. Lejček
Keyword(s):  
Grain Boundary ◽  
Grain Boundaries ◽  
Single Crystals ◽  
First Principles ◽  
Magnetic Moments ◽  
Emission Mössbauer Spectroscopy ◽  
First Principles Calculations ◽  
Hyperfine Parameters ◽  
Impurity Atoms ◽  
Atomic Spacing

ABSTRACTLocation of diffused 57Co atoms in single crystals, bicrystals and polycrystals of pure iron and Fe72Al28alloy were investigated by means of emission Mössbauer spectroscopy. To interpret the results, first principles calculations of iron atom magnetic moments and hyper-fine field were carried out. From comparison of M6ssbauer spectra of single crystals with those of bicrystals and polycrystals, an information about grain boundary positions occupied by diffusing atoms is obtained. It is shown that about 5% of the diffusing atoms at the {112} grain boundary of iron are located at the positions either having impurity atoms in the nearest neighbourhood or characterized by larger atomic spacing in comparison with the bulk. In the Fe72Al28 a dominating portion of diffusing atoms have different surrounding than in grain volume. An enrichment of grain boundaries by aluminum could explain their hyperfine parameters.

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