Hydrogen Diffusion in Chalcopyrite Solar Cell Materials

1998 ◽  
Vol 513 ◽  
Author(s):  
A. Weidinger ◽  
J. Krauser ◽  
Th. Riedle ◽  
R. Klenk ◽  
M. Ch. Lux-Steiner ◽  
...  
Keyword(s):  
Thin Films ◽  
Solar Cell ◽  
Grain Boundaries ◽  
Single Crystals ◽  
Diffusion Coefficients ◽  
Transport Process ◽  
Hydrogen Diffusion ◽  
Intrinsic Diffusion ◽  
Ion Energy ◽  
Temperature Range

ABSTRACTHydrogen diffusion in CuInSe 2 single crystals and CuInS2 thin films was studied by measuring the spreading of implantation profiles upon annealing. Deep implantation with an ion energy of 10 keV and sub-surface implantation with 300 eV were applied. The diffusion coefficients in both materials were found to be in the order of 10-14 to 10-13 cm2/s in the temperature range between 400 and 520 K.These fairly low diffusivities are typical for a trap and release transport process rather than intrinsic diffusion of interstitial hydrogen. In the polycrystalline CuInS2 films, hydrogen leaves the sample through the grain boundaries.

Diffusion in Co-Ni System Studied by Multifoil Technique

2011 ◽  
Vol 312-315 ◽  
pp. 466-471 ◽  
Author(s):  
V.D. Divya ◽  
U. Ramamurty ◽  
Aloke Paul
Keyword(s):  
Activation Energy ◽  
Binary System ◽  
Diffusion Couple ◽  
Diffusion Coefficients ◽  
Impurity Diffusion ◽  
Intrinsic Diffusion ◽  
Exponential Factor ◽  
Temperature Range

Diffusion couple experiments were performed in the Co-Ni binary system for determining inter-, impurity- and intrinsic-diffusion coefficients in the temperature range of 1050 - 1250°C. The activation energy and pre-exponential factor estimated for interdiffusion do not vary significantly with composition. The activation energy calculated for impurity diffusion experiments shows is higher than . Intrinsic diffusion coefficients estimated from the multifoil experiment show that Ni is the fastest diffusing species in this system.

scholarly journals Magnetotransport Behaviour of Nanocrystalline Pr1-xSrxMnO3 (0.40≤x≤0.60)

2013 ◽  
Vol 2013 ◽  
pp. 1-8
Author(s):  
Neelam Maikhuri ◽  
Anurag Gaur ◽  
Vasudha Aggarwal ◽  
Umesh Gaur ◽  
H. K. Singh
Keyword(s):  
Grain Boundaries ◽  
Single Crystals ◽  
Magnetic Structure ◽  
Sol Gel ◽  
Mixed Phase ◽  
Large Contribution ◽  
Metallic Component ◽  
Temperature Range ◽  
Wet Chemical ◽  
Successive Reduction

The nanocrystalline samples of Pr1-xSrxMnO3 (PSMO) (x=0.40, 0.50, 0.55, and 0.60) were synthesized by wet-chemical sol-gel route. Structural, magnetic, and magnetotransport properties have been studied systematically. It is found that Pr1-xSrxMnO3 samples with Sr content x=0.40 and 0.50 show paramagnetic to ferromagnetic (PM-FM) transition at TC~308 K with no trace of FM-AFM transition within the temperature range of 77–350 K. However, interestingly a second transition is observed at T~ 273 and 255 K, respectively, for samples x=0.55 and 0.60 correspond to an A-AFM magnetic structure. This indicates that samples x=0.40 and 0.50 are ferromagnetic below TC, while other samples (x=0.55 and 0.60) have a mixed phase consisting of FM and A-type AFM phases. Resistivity versus temperature (ρ-T) curve shows that the resistivity of all the samples is much larger than the single crystals of corresponding compositions due to large contribution of grain boundaries in the present nanocrystalline samples. Moreover, the decrease in metallic component at higher Sr concentration is also evidenced by the successive reduction in magnetoresistance (MR) with increasing Sr content from x=0.40 to 0.60.

Dislocation-enhanced diffusion in silver single crystals

1970 ◽  
Vol 48 (13) ◽  
pp. 1548-1552 ◽  
Author(s):  
C. T. Lai ◽  
H. M. Morrison
Keyword(s):  
Crystal Lattice ◽  
Single Crystals ◽  
Diffusion Coefficients ◽  
Enhanced Diffusion ◽  
Temperature Range ◽  
Self Diffusion

An electrolytic sectioning technique has been used to measure self-diffusion coefficients in silver single crystals in the temperature range 300–800 °C. The results are analyzed in terms of diffusion through the crystal lattice, enhanced by diffusion along dislocations.

Study of Hf Diffusion in A-Zr using Rutherfdrd Bacckscrttering Spectroscopy

1989 ◽  
Vol 157 ◽  
Author(s):  
F. Dyment ◽  
M. Behar ◽  
H. Oners ◽  
P.L. Grande ◽  
E. Savino ◽  
...  
Keyword(s):  
Thin Films ◽  
Diffusion Coefficients ◽  
The Other ◽  
Present Contribution ◽  
Temperature Range ◽  
Other Hand

ABSTRACTThe present contribution reports on measurements of the diffusion coefficients of Hf in a-Zr via the RBS technique. 250 8 Hf thin films were deposited on two kinds of polycrystalIine Zr samples and annealed in a 773-1115 K temperature range. Our results show that in both cases, the diffusion coefficients follow curved flrrhenius plots. On the other hand for the purest Zr sample we have obtained diffusion coefficients that are systematicaly and significativel ly lower than those corresponding to the Zr sample richer in impurities.

Luminescence spectroscopy of lead-halide perovskites: materials properties and application as photovoltaic devices

2017 ◽  
Vol 5 (14) ◽  
pp. 3427-3437 ◽  
Author(s):  
Yoshihiko Kanemitsu
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Solar Cell ◽  
Single Crystals ◽  
Luminescence Spectroscopy ◽  
Photovoltaic Devices ◽  
Materials Properties ◽  
Halide Perovskites ◽  
Halide Perovskite ◽  
Lead Halide

This review summarizes the optical properties of lead-halide-perovskite thin films, single crystals, and solar-cell devices.

Hydrogen Diffusion in Austenitic Stainless Steels

2006 ◽  
Vol 258-260 ◽  
pp. 322-326 ◽  
Author(s):  
Yun Chen ◽  
Diogo M.F. Santos ◽  
César A.C. Sequeira
Keyword(s):  
Stainless Steels ◽  
Diffusion Coefficients ◽  
Hydrogen Diffusion ◽  
Austenitic Stainless Steels ◽  
Activation Energies ◽  
Alloying Elements ◽  
Temperature Range ◽  
Apparent Diffusion Coefficients ◽  
Apparent Diffusion

The electrochemical permeation technique was used to evaluate the hydrogen diffusion, and analyse its interdependent solubility and trapping behaviour in 9 austenitic stainless steels. The hydrogen diffusion of all alloys obeyed Arrhenius relationships in the temperature range between 25 °C to 100 °C. The apparent diffusion coefficients were determined and the relevant activation energies were estimated. It was observed that Ni, Mo, Mn and N, among other alloying elements, clearly effect the hydrogen diffusion.

Physical properties of a transition metal oxide: optical and photoelectric properties of single crystal and thin film molybdenum trioxide

1968 ◽  
Vol 304 (1477) ◽  
pp. 211-231 ◽  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Single Crystal ◽  
Single Crystals ◽  
Molybdenum Trioxide ◽  
Polarized Light ◽  
Film Surface ◽  
Activation Energies ◽  
Temperature Range ◽  
Photoelectric Properties

The optical absorption spectra of single crystals and thin films of MoO 3 have been measured in the temperature range 150 to 340 °K with polarized light. At room temperature, the absorption spectrum of a single crystal consists of two peaks at λ 4130 and λ 3930 Å with E || C and only one absorption peak at 4250 Å with E ⊥ C followed by a rapid rise in absorption. The temperature and frequency dependence of the absorption coefficient in the edge over a range of absorption magnitudes 10 2 -10 5 cm -1 are described by expressions of the form K(v, T) = K 0 exp[— (β/kT) (E 0 — hv )]. The temperature dependence of the absorption edge was found to be linear from 340 to 150 °K with a temperature coefficient of — 6.2 x 10 -4 and — 9.3 x 10 -4 eV/°K for E || C and E ⊥ C , respectively. The corresponding temperature co­efficients in thin films are — 2.7 x 10 -4 and —4.0 x 10 -4 eV/°K for E|| and ⊥ to the film surface, respectively. Measurements have been made of the refractive indices of a single crystal and thin films. Ultraviolet irradiation of a thin film of MoO 3 produces a broad colour centre band having a maximum at 8700 Å. Several absorption peaks are resolvable in polarized light. On cooling down to 150 °K, the peak position shifts to shorter wavelength by 400 Å (4.67 x 10 -4 eV/°K). An e. s. r. signal with g = 2.001 ± 0.005 has been observed in the colour film. The electrical conductivity has been measured on single crystals and polycrystalline samples in the temperature range 25 to 500 °C, and the activation energies are found to be 1.83 ± 0.01 eV (intrinsic) and 0.29 to 0.70 eV (extrinsic). Photoconductivity has been measured in single crystals and thin films as a function of photon energy, temperature, and irradiation intensity. Trapping plays a significant role in the conduction phenomena. The thermal activation energies associated with different trapping levels were determined from the photoconductive decay curves and the electrical glow peaks measurements and were found to be in the range 0.16 to 0.64 eV.

Mechanism of Enhanced Hydrogen Diffusion in Solar Cell Silicon

1992 ◽  
Vol 262 ◽  
Author(s):  
Bhushan L. Sopori
Keyword(s):  
Solar Cell ◽  
Grain Boundaries ◽  
Polycrystalline Silicon ◽  
Hydrogen Diffusion ◽  
Silicon Substrates ◽  
Hydrogen Diffusivity ◽  
Float Zone ◽  
Low Energies ◽  
High Concentrations ◽  
Mobile Vacancy

ABSTRACTExperimental results that support our previously reported observations of enhanced diffusivity of hydrogen in some solar cell silicon are presented. The diffusivities of hydrogen, implanted at low energies, were measured for several commercial silicon substrates. It is shown that the diffusivity of hydrogen in some solar cell substrates is about two orders of magnitude higher than that in Float Zone silicon in a temperature range of 100° - 300°C. This value of diffusivity is also close to that observed along some grain boundaries in polycrystalline silicon. It is determined that hydrogen in-diffusion is accompanied by an out-diffusion of boron, and that the hydrogen diffusivity is retarded by high concentrations of oxygen. A mechanism for enhanced hydrogen diffusion is proposed which invokes formation of a highly mobile vacancy-hydrogen complex.

The observation of defects on (100) CdTe surfaces by chemical etching

1992 ◽  
Vol 50 (2) ◽  
pp. 1424-1425
Author(s):  
M.E. Lee
Keyword(s):  
Single Crystal ◽  
Grain Boundaries ◽  
Single Crystals ◽  
Chemical Etching ◽  
Crystalline Perfection ◽  
Crystalline Defects ◽  
High Incidence ◽  
Crystallographic Defects ◽  
Cdznte Substrates ◽  
Device Technology

The crystalline perfection of bulk CdTe substrates plays an important role in their use in infrared device technology. The application of chemical etchants to determine crystal polarity or the density and distribution of crystallographic defects in (100) CdTe is not well understood. The lack of data on (100) CdTe surfaces is a result of the apparent difficulty in growing (100) CdTe single crystal substrates which is caused by a high incidence of twinning. Many etchants have been reported to predict polarity on one or both (111) CdTe planes but are considered to be unsuitable as defect etchants. An etchant reported recently has been considered to be a true defect etchant for CdTe, MCT and CdZnTe substrates. This etchant has been reported to reveal crystalline defects such as dislocations, grain boundaries and inclusions in (110) and (111) CdTe. In this study the effect of this new etchant on (100) CdTe surfaces is investigated.The single crystals used in this study were (100) CdTe as-cut slices (1mm thickness) from Bridgman-grown ingots.

Domain coarsening by grain boundary migration in ordered Ni4Mo

1986 ◽  
Vol 44 ◽  
pp. 560-561
Author(s):  
K. Vasudevan ◽  
H. P. Kao ◽  
C. R. Brooks ◽  
E. E. Stansbury
Keyword(s):  
Grain Boundary ◽  
Grain Boundaries ◽  
Short Range ◽  
Boundary Migration ◽  
Grain Boundary Migration ◽  
Rapid Cooling ◽  
Temperature Range ◽  
Fee Structure ◽  
Domain Coarsening ◽  
Boundary Reaction

The Ni4Mo alloy has a short-range ordered fee structure (α) above 868°C, but transforms below this temperature to an ordered bet structure (β) by rearrangement of atoms on the fee lattice. The disordered α, retained by rapid cooling, can be ordered by appropriate aging below 868°C. Initially, very fine β domains in six different but crystallographically related variants form and grow in size on further aging. However, in the temperature range 600-775°C, a coarsening reaction begins at the former α grain boundaries and the alloy also coarsens by this mechanism. The purpose of this paper is to report on TEM observations showing the characteristics of this grain boundary reaction.

Sign in / Sign up

Export Citation Format

Share Document