Electronic and Optical Properties of the Zn and Mg Doped AlN

2010 ◽  
Vol 663-665 ◽  
pp. 195-198 ◽  
Author(s):  
Xue Mei Cai ◽  
Yuan Luo
Keyword(s):  
Optical Properties ◽  
Imaginary Part ◽  
Density Functional ◽  
Absorption Peak ◽  
Generalized Gradient ◽  
Functional Theory ◽  
Electronic And Optical Properties ◽  
The Density Functional Theory ◽  
Pseudo Potential ◽  
Mg Doped

The electronic and optical properties of hexagonal wurtzite AlN doped with Zn and Mg are studied based on the density functional theory. The density of states, dielectric function and absorption spectra are calculated using plane-wave ultrasoft pseudo-potential and the generalized gradient approximation (GGA). The absorption peaks are found during 0-13 eV and 43-48 eV in Mg doped AlN, while in Zn doped AlN, only during 0-15eV. The absorption peak about 43-48 eV found in Mg doped AlN is due to the transition of the deep 2p energy level in Mg to conduction band. The first peak of the dielectric imaginary part is related to the transition of the doped atoms. The peak of the dielectric imaginary part and absorption peak appears about 8 eV is due to the transition of N 2p to Al 3p state. Results show that the electronic and the optical properties of hexagonal wurtzite AlN are directly related to the electronic structure of the impurities in the crystal.

Electronic Structure and Optical Properties of InN: A First-Principles Study

2013 ◽  
Vol 760-762 ◽  
pp. 425-428
Author(s):  
Wei Hua Wang ◽  
Guo Zhong Zhao
Keyword(s):  
Optical Properties ◽  
First Principles ◽  
Density Functional ◽  
Potential Method ◽  
First Principles Calculations ◽  
Generalized Gradient ◽  
Functional Theory ◽  
The Density Functional Theory ◽  
Structure Density ◽  
Pseudo Potential

The electronic properties and the optical properties of wurtzite InN are studied by the first-principles calculations based on the density functional theory. The calculations are based on the Generalized-Gradient Approximation (GGA) and implemented in Plane Wave Self-Consist Field (PWSCF). The optical properties of InN are investigated by the pseudo-potential method with PBEsol-GGA within the WIEN2K program. Band structure, density of states and dielectric functions are calculated detailedly. The energy transitions are observed and compared existing data at critical points. Moreover the new peak in between the region 12 eV to 14 eV should be due to transitions from the In-5p states to the N-2s states.

First-Principles Study of Electronic and Optical Properties in Wurtzite ZnCoO Alloys

2013 ◽  
Vol 333-335 ◽  
pp. 1847-1852
Author(s):  
Ming Zhu Li ◽  
Li Mei Song ◽  
Shan Wang
Keyword(s):  
Optical Properties ◽  
First Principles ◽  
Density Functional ◽  
Optical Constants ◽  
Density Functional Theory Calculations ◽  
Generalized Gradient ◽  
Functional Theory ◽  
Electronic And Optical Properties ◽  
The Density Functional Theory ◽  
Co Concentration

We perform a first-principles simulation to research the electronic and optical properties of wurtzite Zn1-xCoxO. The simulations are based on the Perdew-Burke-Ernzerhof form of generalized gradient approximation within the density functional theory. Calculations are carried out in different concentrations. With increasing Co concentration, the band gap of Zn1-xCoxO decreases due to the shift of valence band. Besides, it is shown that the insertion of Co atom leads to redshift of the optical absorption edge. Meanwhile, the optical constants of pure ZnO and ZnCoO alloys such as loss function, refractive index and reflectivity, are discussed.

Investigations of the Optical Properties of LaNi5 and LaNi4.5Sn0.5

2013 ◽  
Vol 321-324 ◽  
pp. 495-498 ◽  
Author(s):  
Dong Chen ◽  
Chao Xu
Keyword(s):  
Experimental Data ◽  
Refractive Index ◽  
Optical Properties ◽  
Density Functional ◽  
Low Frequency ◽  
Potential Method ◽  
Frequency Region ◽  
Functional Theory ◽  
The Density Functional Theory ◽  
Pseudo Potential

The reflectivity, loss function, refractive index, extinction coefficient and dielectric function of the LaNi5and LaNi4.5Sn0.5intermetallic compounds are investigated through the plane-wave pseudo-potential method based on the density functional theory. The effects of Sn impurity are discussed and some interesting features are found in the low frequency region. Some important optical properties such as static dielectric constant and static refractive index are obtained. The equation [n (0)]2=ε1(0)is satisfied according to our calculation, which indicates that our results are correct and reasonable. Nevertheless, the calculated results need to be testified in the future due to the lack of experimental data.

scholarly journals Oxygen vacancy and doping atom effect on electronic structure and optical properties of Cd2SnO4

RSC Advances ◽  
2018 ◽  
Vol 8 (2) ◽  
pp. 640-646 ◽  
Author(s):  
Mei Tang ◽  
JiaXiang Shang ◽  
Yue Zhang
Keyword(s):  
Optical Properties ◽  
Electronic Structure ◽  
Oxygen Vacancy ◽  
Density Functional ◽  
Generalized Gradient ◽  
Functional Theory ◽  
The Density Functional Theory ◽  
La Doped ◽  
Doping Atom ◽  
Atom Effect

The electronic structure and optical properties of oxygen vacancy and La-doped Cd2SnO4 were calculated using the plane-wave-based pseudopotential method based on the density functional theory (DFT) within the generalized gradient approximation (GGA).

scholarly journals DFT Calculation on the Electronic Structure and Optical Properties of InxGa1-xN Alloy Semiconductors

2019 ◽  
Vol 26 (2) ◽  
pp. 127-132
Author(s):  
Xuewen WANG ◽  
Wenwen LIU ◽  
Chunxue ZHAI ◽  
Jiangni YUN ◽  
Zhiyong ZHANG
Keyword(s):  
Optical Properties ◽  
Absorption Spectrum ◽  
Electronic Structure ◽  
Density Functional ◽  
Dft Calculation ◽  
Generalized Gradient ◽  
Functional Theory ◽  
Photoelectric Performance ◽  
The Density Functional Theory ◽  
Alloy Semiconductors

Using the density functional theory (DFT) of the first principle and Generalized gradient approximation method, the electronic structures and optical properties of the InxGa1-xN crystals with different x (x = 0.25, 0.5, 0.75, 1) have been calculated in this paper. The influence of the electronic structure on the properties has been analyzed. Then the influence of doping quantity on the characteristics has been summarized, which also indicates the trend of complex dielectric function, absorption spectrum and transitivity. With the increase of x, the computational result shows that the optical band gap (i.e.Eg) of the InxGa1-xN crystal tends to be narrow, then the absorption spectrum shifts to the low-energy direction. And the Fermi energy slightly moves to the bottom of conduction band which would cause the growth of conductivity by increasing x. In a word, the InxGa1-xN compound can be achieved theoretically the adjustable Eg and photoelectric performance with x, which will be used in making various optoelectronic devices including solar cell and sensors.

Computer Simulation of the Magnesium Silicide Polymorphs

2012 ◽  
Vol 170-173 ◽  
pp. 3312-3315
Author(s):  
Dong Chen ◽  
Chao Xu
Keyword(s):  
Optical Properties ◽  
Energy Region ◽  
High Performance ◽  
Density Functional ◽  
High Energy ◽  
Magnesium Silicide ◽  
High Energy Region ◽  
Functional Theory ◽  
The Density Functional Theory ◽  
Pseudo Potential

The anti-cotunnite magnesium silicide was constructed, and its absorption coefficient, dielectric function and loss function have been investigated through the plane-wave pseudo- potential calculations based on the density functional theory. In our scheme, we consider the Mg2Si crystal without defects or cracks. Significant features have been observed for the optical properties in the low-energy region and the high-energy region. The main focus of this paper is to determine the high-pressure optical properties of Mg2Si and find out if this material can be used as high-performance thermoelectric devices.

scholarly journals Prediction of electronic and optical properties for Zn1-xCdxSeyTe1-y quaternary alloys: First-principles study

2021 ◽  
Vol 67 (4 Jul-Aug) ◽  
pp. 041001
Author(s):  
K. Benchikh ◽  
M. Benchehima ◽  
H. A. Bid ◽  
A. Chabane Chaouche
Keyword(s):  
Optical Properties ◽  
Density Functional ◽  
Energy Gap ◽  
Local Density ◽  
Quaternary Alloy ◽  
Full Potential ◽  
Generalized Gradient ◽  
Quaternary Alloys ◽  
Electronic And Optical Properties ◽  
The Density Functional Theory

In the present work, the density functional theory (DFT) was performed for the investigation of the structural, electronic and optical properties of the Zn1-xCdxSeyTe1-y quaternary alloys using the full potential linearized augmented plane wave (FP-LAPW) method. For the calculations of the structural properties we have used the Perdew-Burke-Ernzerhof generalized gradient approximation (GGA-PBEsol). On other hand, the electronic properties have been computed within the local density approximation (LDA) in adding to the Tran-Blaha modified Becker-Johnson (TB-mBJ) approach. Our results indicate that the lattice constant, as well as the bulk modulus and the energy gap for the Zn1-xCdxSeyTe1-y quaternary show almost linear variations on the concentration x (0.125≤x≤0.875). In addition, the simulated band structures for theZn1-xCdxSeyTe1-y quaternary exhibits a direct-gap for all concentrations. Moreover, low bowing parameters are observed. Also, some interesting optical properties such as dielectric constant, refractive index, extinction coefficient, absorption coefficient and reflectivity have been calculated by using the TB-mBJ method.  The results of our computations shows that theZn1-xCdxSeyTe1-y quaternary alloy is a promissing candidate for optoelectronic applications. It is noteworthy that the present work is the first theoretical study of the quaternary of interest using the FP-LAPW calculations.

Effects of Si Doping on the Structural, Electronic and Optical Properties of Barium Chalcogenide BaS: A First-Principles Study

SPIN ◽  
2020 ◽  
Vol 10 (02) ◽  
pp. 2050014
Author(s):  
H. Absike ◽  
H. Labrim ◽  
B. Hartiti ◽  
H. Ez-Zahraouy
Keyword(s):  
Optical Properties ◽  
First Principles ◽  
Density Functional ◽  
Original Structure ◽  
Functional Theory ◽  
Electron Charge Density ◽  
Electronic And Optical Properties ◽  
Charge Densities ◽  
The Density Functional Theory ◽  
Si Doped

In this work, the structural, electronic and optical properties of Si-doped barium chalcogenide [barium sulfide (BaS)] with different Si concentrations ([Formula: see text]) are investigated by the first-principles calculations based on the density functional theory (DFT). The band structures, charge densities and complex dielectric functions of the pure as well as Si-doped BaS were presented and analyzed in detail using TB-mBJ approach by WIEN2k package. It is found that silicon concentration can control the bandgap by reducing it to values around 1.4[Formula: see text]eV and 1.6[Formula: see text]eV for 12.5% and 6.25% of Si-doped BaS, respectively. The electron charge density indicates the ionic bonding between silicon and sulfur atoms due to the high electronegativity between them. In fact, the results show that the absorption peaks of Si-doped BaS are enhanced compared with pure BaS. These results suggest that the Ba[Formula: see text]SixS original structure displays excellent physical properties thereby revealing that it is a promising material in advanced optoelectronic and solar cell applications.

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