3C-SiC MOS Based Devices: From Material Growth to Device Characterization

In this work we report on the growth and preparation of 3C-SiC(111) material for metal-oxide-semiconductor (MOS) application. In order to achieve reasonable material quality to prepare MOS capacitors several and crucial steps are needed: 1) heteroepitaxial growth of high quality 3C-SiC(111) layer by vapour-liquid-solid mechanism on 6H-SiC(0001) substrate, 2) surface polishing, 3) homoepitaxial re-growth by chemical vapour deposition and 4) use of an advanced oxidation process combining plasma enhanced chemical vapour deposition (PECVD) SiO2 and short post-oxidation steps in wet oxygen. Combining all these processes the interface traps density (Dit)can be drastically decreased down to 1.2  1010 eV-1cm-2 at 0.63 eV below the conduction band. To our knowledge, these values are the best ever reported for SiC material in general and 3C-SiC in particular.

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Preparation of device-quality SiO2 thin films by remote plasma-enhanced chemical vapour deposition (PECVD): Applications in metal-oxide-semiconductor (MOS) devices

Advanced Materials for Optics and Electronics ◽

10.1002/(sici)1099-0712(199603)6:2<55::aid-amo226>3.0.co;2-j ◽

1996 ◽

Vol 6 (2) ◽

pp. 55-72 ◽

Cited By ~ 10

Author(s):

Gerald Lucovsky

Keyword(s):

Thin Films ◽

Metal Oxide ◽

Chemical Vapour Deposition ◽

Vapour Deposition ◽

Chemical Vapour ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Remote Plasma ◽

Mos Devices

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High frequency C-V investigation of metal-oxide-semiconductor capacitors prepared by low temperature subatmospheric pressure chemical vapour deposition of SiO2 films on silicon substrates

Thin Solid Films ◽

10.1016/0040-6090(92)90607-d ◽

1992 ◽

Vol 217 (1-2) ◽

pp. 68-74 ◽

Cited By ~ 4

Author(s):

C. Pavelescu ◽

J.P. McVittie ◽

C. Chang ◽

K.C. Saraswat ◽

J.Y. Leong

Keyword(s):

Low Temperature ◽

Metal Oxide ◽

Chemical Vapour Deposition ◽

High Frequency ◽

Vapour Deposition ◽

Chemical Vapour ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Silicon Substrates ◽

Pressure Chemical

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Heteroepitaxial Growth of Diamond Film on Cubic Boron Nitride Substrate by Hot-Filament Chemical Vapour Deposition

Chinese Physics Letters ◽

10.1088/0256-307x/12/2/016 ◽

1995 ◽

Vol 12 (2) ◽

pp. 120-122 ◽

Cited By ~ 1

Author(s):

Jin Zengsun ◽

Lu Xianyi ◽

Zou Guangtian

Keyword(s):

Boron Nitride ◽

Chemical Vapour Deposition ◽

Diamond Film ◽

Vapour Deposition ◽

Cubic Boron Nitride ◽

Chemical Vapour ◽

Heteroepitaxial Growth ◽

Hot Filament

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Low Density of Interface States in n-Type 4H-SiC MOS Capacitors Achieved by Nitrogen Implantation

Materials Science Forum ◽

10.4028/www.scientific.net/msf.483-485.693 ◽

2005 ◽

Vol 483-485 ◽

pp. 693-696 ◽

Cited By ~ 52

Author(s):

Florin Ciobanu ◽

Gerhard Pensl ◽

Valeri V. Afanas'ev ◽

Adolf Schöner

Keyword(s):

Vapour Deposition ◽

Oxidation Process ◽

Chemical Vapour ◽

Interface States ◽

Conduction Band Edge ◽

Flat Band ◽

Flat Band Voltage ◽

Nitrogen Implantation ◽

Mos Capacitors ◽

Density Of Interface States

A surface-near Gaussian nitrogen (N) profile is implanted into n-type 4H-SiC epilayers prior to a standard oxidation process. Depending on the depth of the oxidized layer and on the implanted N concentration, the density of interface states DIT determined in corresponding 4H-SiC MOS capacitors decreases to a minimum value of approx. 1010 cm-2eV-1 in the investigated energy range (EC-(0.1 eV to 0.6 eV)), while the flat-band voltage increases to negative values due to generated fixed positive charges. A thin surface-near layer, which is highly N-doped during the chemical vapour deposition growth, leads to a reduction of DIT only close to the conduction band edge.

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Heteroepitaxial growth of δ-Bi2O3 thin films on CaF2(111) by chemical vapour deposition under atmospheric pressure

Materials Research Bulletin ◽

10.1016/j.materresbull.2006.02.031 ◽

2006 ◽

Vol 41 (9) ◽

pp. 1690-1694 ◽

Cited By ~ 4

Author(s):

T. Takeyama ◽

N. Takahashi ◽

T. Nakamura ◽

S. Itoh

Keyword(s):

Thin Films ◽

Chemical Vapour Deposition ◽

Atmospheric Pressure ◽

Vapour Deposition ◽

Chemical Vapour ◽

Heteroepitaxial Growth

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Synthesis highly active platinum tri-metallic electrocatalysts using "one-step" organometallic chemical vapour deposition technique for methanol oxidation process

IOP Conference Series Materials Science and Engineering ◽

10.1088/1757-899x/38/1/012031 ◽

2012 ◽

Vol 38 ◽

pp. 012031 ◽

Cited By ~ 2

Author(s):

Qi-Ling Naidoo ◽

Sivapregasen Naidoo ◽

Leslie Petrik ◽

Alexander Nechaev ◽

Patrick Ndungu ◽

...

Keyword(s):

Methanol Oxidation ◽

Chemical Vapour Deposition ◽

Vapour Deposition ◽

Oxidation Process ◽

Chemical Vapour ◽

Deposition Technique ◽

Highly Active ◽

Chemical Vapour Deposition Technique ◽

One Step

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Investigation of 3C-SiC Lateral Growth on 4H-SiC Mesas

Materials Science Forum ◽

10.4028/www.scientific.net/msf.679-680.111 ◽

2011 ◽

Vol 679-680 ◽

pp. 111-114 ◽

Cited By ~ 2

Author(s):

Jean Lorenzzi ◽

Nikoletta Jegenyes ◽

Mihai Lazar ◽

Dominique Tournier ◽

François Cauwet ◽

...

Keyword(s):

Surface Morphology ◽

Chemical Vapour Deposition ◽

Vapour Deposition ◽

Chemical Vapour ◽

Morphology Evolution ◽

Lateral Growth ◽

Heteroepitaxial Growth ◽

Deposition Techniques ◽

Surface Morphology Evolution ◽

Proper Orientation

In this work we report on 3C-SiC heteroepitaxial growth on 4H-SiC(0001) substrates which were patterned to form mesa structures. Two different deposition techniques were used and compared: vapour-liquid-solid (VLS) mechanism and chemical vapour deposition (CVD). The results in terms of surface morphology evolution and the polytype formation using these growth techniques were studied and compared. It was observed both 4H lateral growth from the mesa sidewalls and 3C enlargement on top of the mesas, the former being faster with CVD and VLS. Only VLS technique allowed elimination of twin boundaries for proper orientation of the mesa sidewalls.

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