Visible and Deep Ultraviolet Study of SiC/SiO2 Interface

2012 ◽  
Vol 711 ◽  
pp. 118-123
Author(s):  
Pawel Borowicz ◽  
Tomasz Gutt ◽  
Tomasz Malachowski ◽  
Mariusz Latek
Keyword(s):  
Oxidation Process ◽  
Electronic Devices ◽  
Wide Band ◽  
Charge Carriers ◽  
Wide Band Gap ◽  
Surface Mobility ◽  
Mobility Of Charge Carriers ◽  
Deep Ultraviolet ◽  
The Subject ◽  
Non Destructive

Silicon carbide (SiC) is a wide band gap semiconductor having good thermal conductivity and high break down voltage. Formation of SiO2layer in thermal oxidation process completes the set of properties of SiC as a promising material for fabrication of high power and high frequency electronic devices. This picture is perturbed by Near Interface Traps (NIT's) that decrease the surface mobility of charge carriers. The origin of NIT's is still the subject of discussion and there are several candidates for NIT's. One possibility is the formation of carbonic structures during the process of manufacturing of MOS-type structures. The aim of this work was to look for possible carbonic inclusions with Raman spectroscopy. The attention of authors was focused on non-destructive way of application of the experimental technique.

scholarly journals EFFECT OF SUNLIGHT ON THE ELECTRICAL CHARACTERISTICS OF THE HETEROSTRUCTURE TITANIUM DIOXIDE/SILICON

Doklady BGUIR ◽  
2019 ◽  
pp. 136-143
Author(s):  
A. A. Kuraptsova ◽  
A. L. Danilyuk ◽  
A. A. Leshok ◽  
V. E. Borisenko
Keyword(s):  
Titanium Dioxide ◽  
Wide Band ◽  
Charge Carriers ◽  
Electrical Characteristics ◽  
Wide Band Gap ◽  
External Bias ◽  
Modeling Process ◽  
Semiconducting Metal Oxides ◽  
The Difference ◽  
Sun Light

Electrical characteristics of the heterostructure titanium dioxide/silicon illuminated by the sun light were theoretically modeled. The modeling process includes consideration of generation of the charge carriers and their transport through the practically important heterostructure n-TiO2/p-Si. The current through the structure under small external bias up to 0.6 V was found to depend nonlinearly on the light wavelength. It is controlled by the movement of the electrons from silicon to the titanium dioxide. The highest current corresponds to the wavelengths of about 600 nm. The results obtained are explained by the difference in the absorption coefficients and reflectivity of titanium dioxide and silicon which determine generation of nonequilibrium charge carriers in the heterostructure n-TiO2/p-Si. It was demonstrated that under illumination of the unbiased heterostructure with the light of 500–600 nm the generated electrons freely move from the titanium dioxide to silicon while the movement of holes is blocked. It helps to concentrate electrons in the relatively thin nearsurface layer of titanium dioxide and use them for catalytic purification of water and air by oxidation of organic pollutants at its surface. The regularities observed are important in the detailed analysis of electronic processes at the surface of wide band gap semiconducting metal oxides and their practical application in photocatalytic processes.

scholarly journals Colour centre generation in diamond for quantum technologies

Nanophotonics ◽  
2019 ◽  
Vol 8 (11) ◽  
pp. 1889-1906 ◽  
Author(s):  
Jason M. Smith ◽  
Simon A. Meynell ◽  
Ania C. Bleszynski Jayich ◽  
Jan Meijer
Keyword(s):  
Solid State ◽  
Ion Implantation ◽  
Electron Irradiation ◽  
Research Effort ◽  
Wide Band ◽  
Colour Centre ◽  
Wide Band Gap ◽  
Colour Centres ◽  
Delta Doping ◽  
The Subject

AbstractEffective methods to generate colour centres in diamond and other wide band-gap materials are essential to the realisation of solid state quantum technologies based on such systems. Such methods have been the subject of intensive research effort in recent years. In this review, we bring together the various techniques used in the generation and positioning of colour centres in diamond: ion implantation, delta-doping, electron irradiation, laser writing and thermal annealing. We assess the roles and merits of each of these techniques in the formation of colour centres for different quantum technologies and consider future combinations of the techniques to meet the requirements of the most demanding applications.

Wide Band Gap Electronic Devices

1995 ◽  
pp. 453-461
Author(s):  
V. E. Chelnokov ◽  
K. V. Vassilevski ◽  
V. A. Dmitriev
Keyword(s):  
Band Gap ◽  
Electronic Devices ◽  
Wide Band ◽  
Wide Band Gap

Plasmonic Photosensitization of a Wide Band Gap Semiconductor: Converting Plasmons to Charge Carriers

Nano Letters ◽  
2011 ◽  
Vol 11 (12) ◽  
pp. 5548-5552 ◽  
Author(s):  
Syed Mubeen ◽  
Gerardo Hernandez-Sosa ◽  
Daniel Moses ◽  
Joun Lee ◽  
Martin Moskovits
Keyword(s):  
Band Gap ◽  
Wide Band ◽  
Charge Carriers ◽  
Wide Band Gap

Pressureless Ag Thin-Film Die-Attach for SiC Devices

2015 ◽  
Vol 821-823 ◽  
pp. 919-922
Author(s):  
Chulmin Oh ◽  
Shijo Nagao ◽  
Tohru Sugahara ◽  
Katsuaki Suganuma
Keyword(s):  
Thin Film ◽  
Electronic Devices ◽  
Wide Band ◽  
Substrate Material ◽  
Wide Band Gap ◽  
Die Attach ◽  
Bonding Property ◽  
Changing Trend ◽  
High Temperature Solder ◽  
Low Temperature Process

The electronic packaging has developed in the changing trend from soldering to solderless technology bonding to achieve higher performance of devices. Moreover, power electronic devices have searching for an alternative interconnection technology to replace the high temperature solder with high Pb contents, particularly suitable for next-generation wide band-gap (WBG) semiconductors such as SiC or GaN. In this study, our pressureless Ag thin-film die-attach gives an opportunity to produce the mass production by realizing low-temperature process. We demonstrate the pressureless Ag thin-film die-attach with Si and SiC to explain the mechanisms underlying the bonding process. The variation of the substrate material modifies the thermal expansion mismatch between sputtered Ag film and the substrate, and changes the bonding property, in particular die-shear strength. We reveal that the thermal stress generated by heating plays one of key roles to control the pressureless Ag thin-film die-attach process.

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