Wide Band Gap Electronic Devices

Author(s):  
V. E. Chelnokov ◽  
K. V. Vassilevski ◽  
V. A. Dmitriev
Author(s):  
T. D. Musho ◽  
S. M. Claiborne ◽  
D. G. Walker

Recent studies of wide band-gap diamond field emission devices have realized superior performance and lifetime. However, theoretical studies using standard Fowler-Nordheim (FN) theory do not fully capture the physics of diamond semiconductor emitters as a result of the fitting parameters inherent to the FN approximation. The following research computationally models wide band-gap field emission devices from a quantum point of view, using a novel non-equilibrium Green’s function (NEGF) approach previously applied to modeling solid-state electronic devices. Findings from this research confirm non-linearities in the FN curve and provide alternative explanations to discrepancies between standard FN theory.


Micro ◽  
2022 ◽  
Vol 2 (1) ◽  
pp. 23-53
Author(s):  
Fabrizio Roccaforte ◽  
Filippo Giannazzo ◽  
Giuseppe Greco

Wide band gap semiconductors such as silicon carbide (SiC) and gallium nitride (GaN) are excellent materials for the next generation of high-power and high-frequency electronic devices. In fact, their wide band gap (>3 eV) and high critical electric field (>2 MV/cm) enable superior performances to be obtained with respect to the traditional silicon devices. Hence, today, a variety of diodes and transistors based on SiC and GaN are already available in the market. For the fabrication of these electronic devices, selective doping is required to create either n-type or p-type regions with different functionalities and at different doping levels (typically in the range 1016–1020 cm−3). In this context, due to the low diffusion coefficient of the typical dopant species in SiC, and to the relatively low decomposition temperature of GaN (about 900 °C), ion implantation is the only practical way to achieve selective doping in these materials. In this paper, the main issues related to ion implantation doping technology for SiC and GaN electronic devices are briefly reviewed. In particular, some specific literature case studies are illustrated to describe the impact of the ion implantation doping conditions (annealing temperature, electrical activation and doping profiles, surface morphology, creation of interface states, etc.) on the electrical parameters of power devices. Similarities and differences in the application of ion implantation doping technology in the two materials are highlighted in this paper.


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