scholarly journals Colour centre generation in diamond for quantum technologies

Nanophotonics ◽  
2019 ◽  
Vol 8 (11) ◽  
pp. 1889-1906 ◽  
Author(s):  
Jason M. Smith ◽  
Simon A. Meynell ◽  
Ania C. Bleszynski Jayich ◽  
Jan Meijer
Keyword(s):  
Solid State ◽  
Ion Implantation ◽  
Electron Irradiation ◽  
Research Effort ◽  
Wide Band ◽  
Colour Centre ◽  
Wide Band Gap ◽  
Colour Centres ◽  
Delta Doping ◽  
The Subject

AbstractEffective methods to generate colour centres in diamond and other wide band-gap materials are essential to the realisation of solid state quantum technologies based on such systems. Such methods have been the subject of intensive research effort in recent years. In this review, we bring together the various techniques used in the generation and positioning of colour centres in diamond: ion implantation, delta-doping, electron irradiation, laser writing and thermal annealing. We assess the roles and merits of each of these techniques in the formation of colour centres for different quantum technologies and consider future combinations of the techniques to meet the requirements of the most demanding applications.

Cathodoluminescence Microanalysis of Electron Irradiation Damage in Wide Band Gap Materials

1998 ◽  
Vol 540 ◽  
Author(s):  
M.A. stevens Kalceff ◽  
M.R. Phillips ◽  
M. Toth ◽  
A.R. Moon ◽  
D.N. Jamieson ◽  
...  
Keyword(s):  
Band Gap ◽  
Electron Irradiation ◽  
Depth Resolution ◽  
Wide Band ◽  
In Situ Monitoring ◽  
Irradiation Damage ◽  
Wide Band Gap ◽  
Energetic Radiation ◽  
Defect Species

AbstractCathodoluminescence (CL) microanalysis (spectroscopy and microscopy) in an electron microscope enables both pre-existing and irradiation induced local variations in the bulk and surface defect structure of wide band gap materials to be characterized with high spatial (lateral and depth) resolution and sensitivity. CL microanalytical techniques allow the in situ monitoring of electron irradiation induced damage, the post irradiation assessment of damage induced by other energetic radiation, and the investigation of irradiation induced electromigration of mobile charged defect species. Electron irradiated silicon dioxide polymorphs and MeV H+ ion implanted Type Ila diamond have been investigated using CL microanalytical techniques.

scholarly journals β-Ga2O3 Used as a Saturable Absorber to Realize Passively Q-Switched Laser Output

2021 ◽  
Author(s):  
Baizhong Li ◽  
Qiudi Chen ◽  
Peixiong Zhang ◽  
Ruifeng Tian ◽  
Lu Zhang ◽  
...  
Keyword(s):  
Solid State ◽  
Maximum Output Power ◽  
Wide Band ◽  
Output Coupling ◽  
Maximum Output ◽  
Wide Band Gap ◽  
Saturable Absorbers ◽  
Maximum Pulse Energy ◽  
First Time ◽  
State 1

β-Ga2O3 crystal have attracted great attentions in the fields of photonics and photoelectronics because of its ultra wide-band gap and high thermal conductivity. Here, pure β-Ga2O3 crystal was successfully grown by optical floating zone (OFZ) method, and used as saturable absorbers to realize a passively Q-switched all-solid-state 1μm laser for the first time. By placing the as-grown β-Ga2O3 crystal into the resonator of Nd:GYAP solid-state laser, a Q-switched pulses at the center wavelength of 1080.4 nm are generated under a output coupling of 10%. The maximum output power is 191.5 mW while the shortest pulse width is 606.54 ns, and the maximum repetition frequency is 344.06 kHz. The maximum pulse energy and peak power are 0.567 μJ and 0.93 W, respectively. Our experimental results show that β-Ga2O3 crystal has great potential in the development of all-solid-state 1μm pulsed laser.

Visible and Deep Ultraviolet Study of SiC/SiO2 Interface

2012 ◽  
Vol 711 ◽  
pp. 118-123
Author(s):  
Pawel Borowicz ◽  
Tomasz Gutt ◽  
Tomasz Malachowski ◽  
Mariusz Latek
Keyword(s):  
Oxidation Process ◽  
Electronic Devices ◽  
Wide Band ◽  
Charge Carriers ◽  
Wide Band Gap ◽  
Surface Mobility ◽  
Mobility Of Charge Carriers ◽  
Deep Ultraviolet ◽  
The Subject ◽  
Non Destructive

Silicon carbide (SiC) is a wide band gap semiconductor having good thermal conductivity and high break down voltage. Formation of SiO2layer in thermal oxidation process completes the set of properties of SiC as a promising material for fabrication of high power and high frequency electronic devices. This picture is perturbed by Near Interface Traps (NIT's) that decrease the surface mobility of charge carriers. The origin of NIT's is still the subject of discussion and there are several candidates for NIT's. One possibility is the formation of carbonic structures during the process of manufacturing of MOS-type structures. The aim of this work was to look for possible carbonic inclusions with Raman spectroscopy. The attention of authors was focused on non-destructive way of application of the experimental technique.

Solid-state lighting with wide band gap semiconductors

2014 ◽  
Vol 1 ◽  
Author(s):  
Faiz Rahman
Keyword(s):  
Gallium Nitride ◽  
Solid State ◽  
Band Gap ◽  
Light Emitting Diodes ◽  
Rapid Development ◽  
Wide Band ◽  
Solid State Lighting ◽  
Wide Band Gap ◽  
Light Emitting ◽  
Wide Band Gap Semiconductors

ABSTRACTLight-emitting diodes (LEDs) made from wide band gap semiconductors, such as gallium nitride, are undergoing rapid development. Solid-state lighting with these LEDs is transforming patterns of energy usage and lifestyle throughout the world.With solid-state lighting gradually taking over from incandescent and fluorescent lighting, light-emitting diodes (LEDs) are very much the focus of research nowadays. This compact review takes a look at LEDs for lighting applications made from wide band gap semiconductors. A very brief history of electric lighting is included for completeness, followed by a description of blue-emitting LEDs that serve as pump sources for all ‘white’ LEDs. This is followed by a discussion on techniques to extract more light from the confines of LED chips through surface patterning. The thermal management of LEDs is perhaps the most important consideration in designing and using LED-based luminaires. This topic is discussed with regard to recent studies on LED reliability. The very promising development of gallium nitride-on-silicon LEDs is examined next followed by a discussion on phosphors for color conversion in LEDs. LED lighting has positively influenced both upscale and downscale illumination markets worldwide. Its societal impact is examined, with the review concluding with a look at efforts to produce LEDs from zinc oxide – a material that holds much promise for the future of solid-state lighting.

scholarly journals Novel Solid-State Sodium-Ion Battery with Wide Band Gap NaTi2(PO4)3 Nanocrystal Electrolyte

ACS Omega ◽  
2021 ◽  
Vol 6 (17) ◽  
pp. 11537-11544
Author(s):  
Hanqing Dai ◽  
Wenqian Xu ◽  
Zhe Hu ◽  
Yuanyuan Chen ◽  
Jing Gu ◽  
...  
Keyword(s):  
Solid State ◽  
Band Gap ◽  
Wide Band ◽  
Sodium Ion ◽  
Sodium Ion Battery ◽  
Wide Band Gap

SEMICONDUCTOR UV SOURCES AND DETECTORS: SOME NON-CONSUMER APPLICATIONS

2002 ◽  
Vol 12 (02) ◽  
pp. 421-428
Author(s):  
ELIAS MUÑOZ
Keyword(s):  
Solid State ◽  
Band Gap ◽  
Semiconductor Devices ◽  
Wide Band ◽  
Information Storage ◽  
Solid State Lighting ◽  
Wide Band Gap ◽  
Promising Area ◽  
Wide Band Gap Semiconductors ◽  
Uv Emitters

UV emitters and photodetectors based on wide band-gap semiconductors are being investigated and may soon become commercially available. Solid state lighting and information storage are two main applications in the consumer area for these new semiconductor devices. Presently, III-nitrides seem to be the most promising materials for such near UV semiconductor devices. In this work some non-consumer applications are indicated. Biophotonics appears to be a very promising area for such devices.

Solid-State Field-Controlled Electron Emission: An alternative to thermionic and field-emission

2000 ◽  
Vol 621 ◽  
Author(s):  
Vu Thien Binh ◽  
J.P. Dupin ◽  
P. Thevenard ◽  
D. Guillot ◽  
J.C. Plenet
Keyword(s):  
Solid State ◽  
Field Emission ◽  
Electron Emission ◽  
Sol Gel ◽  
Wide Band ◽  
Semiconductor Layer ◽  
Metallic Surface ◽  
Wide Band Gap ◽  
Cold Cathodes ◽  
Vacuum Microelectronics

ABSTRACTIn the solid-state field-controlled emitter (SSE), the emission barrier, which is the factor of utmost importance for surface electron emission, is tailored by a controlled extrinsic parameter like the injected space charge located near the surface. This is done by depositing an ultra-thin wide band-gap semiconductor layer on a metallic surface. It is an alternative approach to the thermionic or field emission for which the work function value is intrinsic to the material used. The emission current measurements from the SSE cold cathodes show stable emission, at low applied field (≈50 V/μm) and in poor vacuum (≈10−7 Torr). The new emission mechanism has been modeled, the calculations and the theoretical analysis confirm the experimental results. The fabrication of the SSE, either by a sputter deposition in vacuum or by a sol-gel technique, meets most of the demands specific to high throughput fabrication of cold cathodes with large emitting area dedicated to applications in vacuum microelectronics.

Introduction Of Ions Into Wide Band Gap Semiconductors

1997 ◽  
Vol 483 ◽  
Author(s):  
H. Paul Maruska ◽  
Mike Lioubtchenko ◽  
Thomas G. Tetreault ◽  
Marek Osinskif ◽  
Stephen J. Pearton ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Band Gap ◽  
Elevated Temperatures ◽  
Wide Band ◽  
Optoelectronic Device ◽  
Wide Band Gap ◽  
New Device ◽  
Device Applications ◽  
Wide Band Gap Semiconductors ◽  
Junction Diode

AbstractWith great attention now being given to the wide band gap materials for electronic and optoelectronic device applications, there is interest in using ion implantation to introduce dopants into selected regions of devices. Work on ion implantation into SiC and the III-V nitrides is reviewed, new device concepts are given, and recent results are presented. These include SiC implantations at elevated temperatures, a GaN sample implanted with Si having an electron mobility after annealing of 106 cm2/V-s, and a novel GaN np junction diode created by implantation.

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