Improvement in the SiO2/4H-SiC Interfacial Region by Thermal Treatments with Hydrogen Peroxide
2012 ◽
Vol 717-720
◽
pp. 753-756
Keyword(s):
The effect of sequential thermal treatments with growth/removal steps of SiO2 films intercalated with hydrogen peroxide treatments on the SiO2/4H-SiC interfacial region thickness were investigated on both Si and C faces. In the Si face case, samples that were submitted to more H2O2 treatments presented thinner interfacial region thicknesses. In the C face case, on the other hand, no significant alteration in this region was observed.
1924 ◽
Vol 39
(5)
◽
pp. 745-755
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Keyword(s):
2011 ◽
Vol 14
(9)
◽
pp. H368
◽
1994 ◽
Vol 77
(3)
◽
pp. 631-637
◽
Keyword(s):
Keyword(s):
1990 ◽
Vol 259
(6)
◽
pp. C995-C997
◽
Keyword(s):
1934 ◽
Vol 144
(852)
◽
pp. 257-266
Keyword(s):
2000 ◽
Vol 42
(7-8)
◽
pp. 353-361
◽
Keyword(s):