Local Anodic Oxidation of Phosporous-Implanted 4H-SiC by Atomic Force Microscopy

2012 ◽  
Vol 717-720 ◽  
pp. 905-908 ◽  
Author(s):  
Jung Ho Lee ◽  
Jung Jun Ahn ◽  
Anders Hallén ◽  
Carl Mikael Zetterling ◽  
Sang Mo Koo
Keyword(s):  
Surface Roughness ◽  
Atomic Force Microscopy ◽  
Oxidation Behavior ◽  
Annealing Process ◽  
Applied Bias ◽  
Force Microscopy ◽  
Atomic Force ◽  
Local Oxidation ◽  
Local Anodic Oxidation ◽  
Post Implantation

In this work, local oxidation behavior in phosphorous ion-implanted 4H-SiC has been investigated by using atomic force microscopy (AFM). The AFM-local oxidation (LO) has been performed on the implanted samples, with and without activation anneal, using varying applied bias (15/20/25 V). It has been clearly shown that the post-implantation annealing process at 1650 oC has a great impact on the local oxidation rate by electrically activating the dopants and by modulating the surface roughness. In addition, the composition of resulting oxides changes depending on the doping level of SiC surfaces.

Brittle Behaviour in Aspirin Crystals: Evidence of Spalling Fracture

2020 ◽  
Author(s):  
Benjamin P. A. Gabriele ◽  
Craig J. Williams ◽  
Douglas Stauffer ◽  
Brian Derby ◽  
Aurora J. Cruz-Cabeza
Keyword(s):  
Surface Roughness ◽  
Atomic Force Microscopy ◽  
Single Crystals ◽  
Spalling Fracture ◽  
Force Microscopy ◽  
Atomic Force ◽  
Afm Imaging

<div> <div> <div> <p>Single crystals of aspirin form I were cleaved and indented on their dominant face. Upon inspection, it was possible to observe strongly anisotropic shallow lateral cracks due to the extreme low surface roughness after cleavage. Atomic Force Microscopy (AFM) imaging showed spalling fractures nucleating from the indent corners, forming terraces with a height of one or two interplanar spacings d100. The formation of such spalling fractures in aspirin was rationalised using basic calculations of attachment energies, showing how (100) layers are poorly bonded when compared to their relatively higher intralayer bonding. An attempt at explaining the preferential propagation of these fractures along the [010] direction is discussed. </p> </div> </div> </div>

Brittle Behaviour in Aspirin Crystals: Evidence of Spalling Fracture

2020 ◽  
Author(s):  
Benjamin P. A. Gabriele ◽  
Craig J. Williams ◽  
Douglas Stauffer ◽  
Brian Derby ◽  
Aurora J. Cruz-Cabeza
Keyword(s):  
Surface Roughness ◽  
Atomic Force Microscopy ◽  
Single Crystals ◽  
Spalling Fracture ◽  
Force Microscopy ◽  
Atomic Force ◽  
Afm Imaging

<div> <div> <div> <p>Single crystals of aspirin form I were cleaved and indented on their dominant face. Upon inspection, it was possible to observe strongly anisotropic shallow lateral cracks due to the extreme low surface roughness after cleavage. Atomic Force Microscopy (AFM) imaging showed spalling fractures nucleating from the indent corners, forming terraces with a height of one or two interplanar spacings d100. The formation of such spalling fractures in aspirin was rationalised using basic calculations of attachment energies, showing how (100) layers are poorly bonded when compared to their relatively higher intralayer bonding. An attempt at explaining the preferential propagation of these fractures along the [010] direction is discussed. </p> </div> </div> </div>

scholarly journals Atomic force microscopy comparative analysis of the surface roughness of two posterior chamber phakic intraocular lens models: ICL versus IPCL

2021 ◽  
Vol 21 (1) ◽  
Author(s):  
Juan Gros-Otero ◽  
Samira Ketabi ◽  
Rafael Cañones-Zafra ◽  
Montserrat Garcia-Gonzalez ◽  
Cesar Villa-Collar ◽  
...  
Keyword(s):  
Surface Roughness ◽  
Atomic Force Microscopy ◽  
Intraocular Lenses ◽  
Posterior Chamber ◽  
Anterior Surface ◽  
Contact Mode ◽  
Force Microscopy ◽  
Atomic Force ◽  
Phakic Intraocular Lenses ◽  
Roughness Measurements

Abstract Background To compare the anterior surface roughness of two commercially available posterior chamber phakic intraocular lenses (IOLs) using atomic force microscopy (AFM). Methods Four phakic IOLs were used for this prospective, experimental study: two Visian ICL EVO+ V5 lenses and two iPCL 2.0 lenses. All of them were brand new, were not previously implanted in humans, were monofocal and had a dioptric power of − 12 diopters (D). The anterior surface roughness was assessed using a JPK NanoWizard II® atomic force microscope in contact mode immersed in liquid. Olympus OMCL-RC800PSA commercial silicon nitride cantilever tips were used. Anterior surface roughness measurements were made in 7 areas of 10 × 10 μm at 512 × 512 point resolution. The roughness was measured using the root-mean-square (RMS) value within the given regions. Results The mean of all anterior surface roughness measurements was 6.09 ± 1.33 nm (nm) in the Visian ICL EVO+ V5 and 3.49 ± 0.41 nm in the iPCL 2.0 (p = 0.001). Conclusion In the current study, we found a statistically significant smoother anterior surface in the iPCL 2.0 phakic intraocular lenses compared with the VISIAN ICL EVO+ V5 lenses when studied with atomic force microscopy.

Copper Diffusion Into Aluminum-Silicon Metallizations by Accelerated Thermal and Electrical Stressing

1996 ◽  
Vol 428 ◽  
Author(s):  
G. O. Ramseyer ◽  
L. H. Walsh ◽  
J. V. Beasock ◽  
H. F. Helbig ◽  
R. C. Lacoe ◽  
...  
Keyword(s):  
Surface Roughness ◽  
Atomic Force Microscopy ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
Depth Profiling ◽  
Copper Diffusion ◽  
Force Microscopy ◽  
Atomic Force ◽  
Line Widths ◽  
Electromigration Lifetime

AbstractPatterned 930 nm Al(1%-Si) interconnects over 147 nm of Cu were electromigration lifetime tested at 1.0–1.5 × 105 A/cm2 at 250 °C. The morphology of the surfaces of the electromigrated stripes with different line widths and times to failure were characterized by atomic force microscopy, and changes in surface roughness were compared. The diffusion of copper into the electromigrated aluminum stripes was determined by depth profiling using Auger electron spectroscopy. In particular, areas where hillocks formed were examined and compared to areas of median roughness.

Improved local oxidation of silicon carbide using atomic force microscopy

2010 ◽  
Vol 96 (8) ◽  
pp. 082105 ◽  
Author(s):  
Yeong-Deuk Jo ◽  
Soo-Hyung Seo ◽  
Wook Bahng ◽  
Sang-Cheol Kim ◽  
Nam-Kyun Kim ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Atomic Force Microscopy ◽  
Force Microscopy ◽  
Atomic Force ◽  
Local Oxidation

Scaling Analysis of a- and poly-Si Surface Roughness by Atomic Force Microscopy

1994 ◽  
Vol 367 ◽  
Author(s):  
T. Yoshinobu ◽  
A. Iwamoto ◽  
K. Sudoh ◽  
H. Iwasaki
Keyword(s):  
Surface Roughness ◽  
Atomic Force Microscopy ◽  
Surface Area ◽  
Scaling Behavior ◽  
Linear Size ◽  
Scaling Analysis ◽  
Macroscopic Scale ◽  
Force Microscopy ◽  
Atomic Force ◽  
Roughness Exponent

AbstractThe scaling behavior of the surface roughness of a-and poly-Si deposited on Si was investigated by atomic force microscopy (AFM). The interface width W(L), defined as the rms roughness as a function of the linear size of the surface area, was calculated from various sizes of AFM images. W(L) increased as a power of L with the roughness exponent ∝ on shorter length scales, and saturated at a constant value of on a macroscopic scale. The value of roughness exponent a was 0.48 and 0.90 for a-and poly-Si, respectively, and σ was 1.5 and 13.6nm for 350nm-thick a-Si and 500nm-thick poly-Si, respectively. The AFM images were compared with the surfaces generated by simulation.

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