Positive Temperature Coefficient SiC PiN Diodes

2012 ◽  
Vol 717-720 ◽  
pp. 981-984 ◽  
Author(s):  
Eugene A. Imhoff ◽  
Karl D. Hobart ◽  
Francis J. Kub ◽  
M.G. Ancona ◽  
Rachael L. Myers-Ward ◽  
...  
Keyword(s):  
Temperature Coefficient ◽  
Voltage Drop ◽  
Positive Temperature Coefficient ◽  
Positive Temperature ◽  
Pin Diodes ◽  
Current Density Range ◽  
Forward Voltage Drop ◽  
Current Densities ◽  
Anode Area ◽  
Ballast Resistance

Integration of patterned ballast resistance into the anode of SiC PiNs is a solution to the dilemma of negative dVf /dT for such diodes. In fabricated 4H-SiC PiN diodes, we demonstrate a cross-over from negative to positive temperature coefficient for current densities as low as 80 A/cm2. Adjusting the percentage of the patterned anode area, the positive or neutral dVf /dT can be achieved over a wide current-density range without substantial penalty in the forward voltage drop. This characteristic is crucial for high-power SiC packages with ganged-parallel rectifier arrays.

A 10 kV 4H-SiC Bipolar Turn Off Thyristor (BTO) with Positive Temperature Coefficient of VF, Current Saturation Capability and Fast Switching Speed

2010 ◽  
Vol 645-648 ◽  
pp. 1045-1048 ◽  
Author(s):  
Qing Chun Jon Zhang ◽  
Jim Richmond ◽  
Craig Capell ◽  
Anant K. Agarwal ◽  
John W. Palmour ◽  
...  
Keyword(s):  
Temperature Coefficient ◽  
Voltage Drop ◽  
Positive Temperature Coefficient ◽  
Positive Temperature ◽  
Switching Speed ◽  
Fast Switching ◽  
Current Saturation ◽  
Forward Voltage Drop ◽  
Junction Transistor ◽  
Fast Switching Speed

A novel power device configuration, the Bipolar Turn Off thyristor (BTO), was proposed and demonstrated in SiC. The BTO operates in anode switch configuration consisting of a 9 kV SiC p-type Gate Turn Off thyristor (GTO) and a 1600 V SiC n-type Bipolar Junction Transistor (BJT). Compared with SiC GTOs, several new features have been accomplished in the BTO: (1) A positive temperature coefficient of forward voltage drop, (2) Anode current saturation capability, and (3) A simple gate driver and fast switching speed.

4H-SiC n-Channel DMOS IGBTs on (0001) and (000-1) Oriented Lightly Doped Free-Standing Substrates

2016 ◽  
Vol 858 ◽  
pp. 954-957
Author(s):  
Sauvik Chowdhury ◽  
Collin W. Hitchcock ◽  
Rajendra Dahal ◽  
Ishwara B. Bhat ◽  
T. Paul Chow
Keyword(s):  
Voltage Drop ◽  
Positive Temperature Coefficient ◽  
Bipolar Transistors ◽  
Oxide Semiconductor ◽  
Positive Temperature ◽  
Insulated Gate Bipolar Transistors ◽  
Free Standing ◽  
Forward Voltage Drop ◽  
Collector Region ◽  
Mos Gate

We experimentally demonstrate 4H-SiC n-channel, DMOS Insulated Gate Bipolar Transistors (IGBTs) on 180 µm thick lightly doped free-standing n- substrates with an ion-implanted collector region, and metal-oxide-semiconductor (MOS) gate on (0001) and (000-1) surfaces. The IGBTs show an on-state current of 20A/cm2 at a power dissipation of 300W/cm2. Threshold voltage of 7.5V and 10.5V was obtained on Si-face and C-face respectively. Both IGBTs show a small positive temperature coefficient of the forward voltage drop, which is useful for easy parallelization of devices.

Improving Switching Characteristics of 4H-SiC Junction Rectifiers Using Epitaxial and Implanted Anodes with Epitaxial Refill

2006 ◽  
Vol 527-529 ◽  
pp. 1363-1366
Author(s):  
Peter A. Losee ◽  
Can Hua Li ◽  
R.J. Kumar ◽  
T. Paul Chow ◽  
I. Bhat ◽  
...  
Keyword(s):  
Voltage Drop ◽  
Experimental Characterization ◽  
Forward Voltage ◽  
Pin Diodes ◽  
Switching Performance ◽  
Forward Current ◽  
Forward Voltage Drop ◽  
Current Densities ◽  
Switching Characteristics ◽  
Junction Rectifiers

The on-state and switching performance of high voltage 4H-SiC junction rectifiers are compared using numerical simulations and experimental characterization. Epitaxial and implanted anode PiN diodes as well as novel, advanced rectifiers have been fabricated in 4H-SiC using 110μm thick drift layers. The relatively low forward voltage drop of these epi-anode diodes (4.2V @ 100A/cm2) indicates moderate conductivity modulation, while the superior switching performance of the “MPS-like” rectifiers is demonstrated with reverse recovery characteristics at various temperatures and forward current densities.

A NOVEL PT AND NPT MIXED IGBT HAVING A NEW n-BUFFER LAYER

2007 ◽  
Vol 21 (01) ◽  
pp. 1-8
Author(s):  
FEI ZHANG ◽  
SHUHUA LUO ◽  
LIANG ZHANG ◽  
WEI WANG ◽  
WEN YU ◽  
...  
Keyword(s):  
Buffer Layer ◽  
Voltage Drop ◽  
Positive Temperature Coefficient ◽  
Positive Temperature ◽  
Insulated Gate Bipolar Transistor ◽  
Switching Losses ◽  
Blocking Voltage ◽  
Forward Voltage Drop ◽  
Parallel Integration ◽  
First Time

For the first time, a novel mixed insulated gate bipolar transistor (MIGBT) is proposed and verified by two-dimensional (2D) mixed device-circuit simulations. The structure of the proposed device is almost identical with that of the conventional IGBT, except for the buffer layer which is formed by employing the n+/n- structure, so that the trade-off relation between the conduction and switching losses is greatly improved and efficiently decoupled. Furthermore, the proposed device exhibits larger forward blocking voltage and positive temperature coefficient of the forward voltage drop, facilitating parallel integration.

9 kV, 1 cm2 SiC Gate Turn-Off Thyristors

2010 ◽  
Vol 645-648 ◽  
pp. 1017-1020 ◽  
Author(s):  
Anant K. Agarwal ◽  
Qing Chun Jon Zhang ◽  
Robert Callanan ◽  
Craig Capell ◽  
Albert A. Burk ◽  
...  
Keyword(s):  
Voltage Drop ◽  
Positive Temperature Coefficient ◽  
Positive Temperature ◽  
Large Area ◽  
Electrical Stress ◽  
Low Leakage ◽  
Blocking Voltage ◽  
Forward Voltage Drop ◽  
Basal Plane Dislocation ◽  
Multiple Devices

In this paper, for the first time, we report a large area (1 cm2) SiC GTO with 9 kV blocking voltage fabricated on 100-mm 4H-SiC substrates with much reduced Basal Plane Dislocation (BPD) density. The static and dynamic characteristics are described. A forward drop of 3.7 V at 100 A (100 A/cm2) is measured at 25°C. A slight positive temperature coefficient of the forward drop is present at 300 A/cm2, indicating the possibility of paralleling multiple devices for higher current capability. The device exhibits extremely low leakage currents at high temperatures. The device has shown fast turn-on time of 53.9 nsec, and ~3.5 s of turn-off time, respectively. A stable forward voltage drop after electrical stress for >1000 hours has been achieved.

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