The Integrated Evaluation Platform for SiC Wafers and Epitaxial Films

2013 ◽  
Vol 740-742 ◽  
pp. 451-454 ◽  
Author(s):  
M. Kitabatake ◽  
J. Sameshima ◽  
Osamu Ishiyama ◽  
K. Tamura ◽  
H. Ohshima ◽  
...  

It has been widely accepted that wide-band-gap semiconductor SiC can provide low-loss semiconductor switches and diodes for the power electronics applications. The SiC devices enable the low-loss and compact converters and inverters.

2010 ◽  
Vol 645-648 ◽  
pp. 1101-1106 ◽  
Author(s):  
Jürgen Biela ◽  
Mario Schweizer ◽  
Stefan Waffler ◽  
Benjamin Wrzecionko ◽  
Johann Walter Kolar

Switching devices based on wide band gap materials as SiC oer a signicant perfor- mance improvement on the switch level compared to Si devices. A well known example are SiC diodes employed e.g. in PFC converters. In this paper, the impact on the system level perfor- mance, i.e. eciency/power density, of a PFC and of a DC-DC converter resulting with the new SiC devices is evaluated based on analytical optimisation procedures and prototype systems. There, normally-on JFETs by SiCED and normally-off JFETs by SemiSouth are considered.


2020 ◽  
Vol 10 (1) ◽  
pp. 213-218
Author(s):  
Daniel W. Cunningham ◽  
Eric P. Carlson ◽  
Joseph S. Manser ◽  
Isik C. Kizilyalli

Automatika ◽  
2012 ◽  
Vol 53 (2) ◽  
pp. 107-116 ◽  
Author(s):  
José Millán ◽  
Philippe Godignon ◽  
Amador Pérez-Tomás

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