Dislocation Analysis of 4H-SiC Using KOH Low Temperature Etching
2014 ◽
Vol 778-780
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pp. 358-361
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Keyword(s):
The conventional KOH etching method at elevated temperatures is an easy way to study SiC dislocations, but presents problems due to an increased etch rate. Here, we examine the application of low temperature KOH treatment for the analysis of dislocation cores and etch pits in SiC. A low energy scanning electron microscope (SEM) is effective to classify dislocation kinds. The scanning transmission electron microscope (STEM) observation of thick samples prepared by the in situ micro-sampling technique enables evaluation of detailed dislocation properties.
2021 ◽
2018 ◽
Vol 16
(0)
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pp. 286-288
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2014 ◽
Vol 20
(2)
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pp. 323-329
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2007 ◽
Vol 25
(6)
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pp. 2624
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