scholarly journals An Analysis of Li Ion Secondary Battery Materials by Using Focused Ion Beam Micro-sampling Technique and Cold Field Emission Scanning Transmission Electron Microscope

2010 ◽  
Vol 16 (S2) ◽  
pp. 214-215
Author(s):  
T Tanigaki ◽  
K Ito ◽  
K Nakamura ◽  
Y Nagakubo ◽  
J Azuma ◽  
...  
Keyword(s):  
Electron Microscope ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Sampling Technique ◽  
Scanning Transmission Electron Microscope ◽  
Battery Materials ◽  
Secondary Battery ◽  
Transmission Electron ◽  
Scanning Transmission ◽  
Li Ion

Extended abstract of a paper presented at Microscopy and Microanalysis 2010 in Portland, Oregon, USA, August 1 – August 5, 2010.

scholarly journals Stem-EDX and FIB-SEM Tomography of ALLVAC 718Plus Superalloy

2016 ◽  
Vol 61 (2) ◽  
pp. 535-542 ◽  
Author(s):  
A. Kruk ◽  
G. Cempura ◽  
S. Lech ◽  
A. Czyrska -Filemonowicz
Keyword(s):  
Electron Microscope ◽  
Focused Ion Beam ◽  
Electron Tomography ◽  
Ion Beam ◽  
High Strength ◽  
Strengthening Mechanism ◽  
Scanning Transmission Electron Microscope ◽  
Particle Analysis ◽  
Transmission Electron ◽  
Scanning Transmission

Abstract Allvac 718Plus (718Plus) is a high strength, corrosion resistant nickel- based superalloy used for application in power generation, aeronautics and aerospace industry. The 718Plus microstructure consists of a γ matrix with γ’-Ni3(Al,Ti) and some δ- Ni3Nb phases as well as lamellar particles (η-Ni3Ti, η*-Ni6AlNb or Ni6(Al,Ti)Nb) precipitated at the grain boundaries. The primary strengthening mechanism for this alloy is a precipitation hardening, therefore size and distribution of precipitates are critical for the performance of the alloy. The aim of this study was to characterize precipitates in the 718Plus superalloy using Scanning Transmission Electron Microscope combined with Energy Dispersive X-ray Spectroscopy (STEM-EDX) and Focused Ion Beam Scanning Electron Microscope (FIB-SEM). The STEM-EDX and FIB-SEM tomography techniques were used for 3D imaging and metrology of the precipitates. Transmission electron microscopy and EDX spectroscopy were used to reveal details of the 718Plus microstructure and allow determine chemical composition of the phases. The study showed that electron tomography techniques permit to obtain complementary information about microstructural features (precipitates size, shape and their 3D distribution) in the reconstructed volume with comparison to conventional particle analysis methods, e.g. quantitative TEM and SEM metallography

Application of Passive Voltage Contrast (PVC) to Dual Beam Focused Ion Beam (FIB) Based Sample Preparation for the Scanning/Transmission Electron Microscope (S/TEM)

2014 ◽  
Author(s):  
Corey Senowitz ◽  
Hieu Nguyen ◽  
Ruby Vollrath ◽  
Caiwen Yuan ◽  
Fati Rassolzadeh ◽  
...  
Keyword(s):  
Electron Microscope ◽  
Sample Preparation ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Scanning Transmission Electron Microscope ◽  
Dual Beam ◽  
Transmission Electron ◽  
Scanning Transmission ◽  
Voltage Contrast ◽  
Technology Nodes

Abstract The modern scanning transmission electron microscope (S/TEM) has become a key technology and is heavily utilized in advanced failure analysis (FA) labs. It is well equipped to analyze semiconductor device failures, even for the latest process technology nodes (20nm or less). However, the typical sample preparation process flow utilizes a dual beam focused ion beam (FIB) microscope for sample preparation, with the final sample end-pointing monitored using the scanning electron microscope (SEM) column. At the latest technology nodes, defect sizes can be on the order of the resolution limit for the SEM column. Passive voltage contrast (PVC) is an established FA technique for integrated circuit (IC) FA which can compensate for this resolution deficiency in some cases. In this paper, PVC is applied to end-pointing cross-sectional S/TEM samples on the structure or defect of interest to address the SEM resolution limitation.

Effect of Surface Roughness on STEM Samples Prepared by FIB

1999 ◽  
Vol 5 (S2) ◽  
pp. 906-907
Author(s):  
C.B. Vartuli ◽  
F.A. Stevie ◽  
T. Kamino
Keyword(s):  
Electron Microscope ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Sample Surface ◽  
Scanning Transmission Electron Microscope ◽  
Transmission Electron ◽  
Scanning Transmission ◽  
Speed Of Analysis ◽  
Scanning Electron ◽  
Effect Of Surface

The Scanning Transmission Electron Microscope (STEM) can provide images beyond Scanning Electron Microscope (SEM) capability, on samples which do not have to be prepared to the degree required for Transmission Electron Microscopy (TEM). For some applications, such as semiconductor production, speed of analysis is critical. This paper explores Focused Ion Beam (FIB) sample preparation for STEM.The samples were prepared using an Hitachi FB-2000A FEB tool. Two analysis regions of similar thickness were cut. The rough sample was milled using a 500 pA beam and no polish cut. The smooth sample was prepared by cutting first with a 500 pA beam, and then using additional, smaller diameter beams, concluding with a 30 pA beam. This resulted in a sample surface polished to a degree similar to that used for TEM specimens. The samples were imaged in an Hitachi HD-2000 STEM at 200KeV. Transmission electron images taken at 100 kx are shown in Figure 1 of the rough sample and of the smooth sample.

FIB Micro-Pillar Sampling of Si Devices and its 3D Observation

2003 ◽  
Author(s):  
T. Yaguchi ◽  
T. Kamino ◽  
T. Ohnishi ◽  
T. Hashimoto ◽  
K. Umemura ◽  
...  
Keyword(s):  
Focused Ion Beam ◽  
Ion Beam ◽  
Three Dimensional ◽  
Sampling Technique ◽  
Scanning Transmission Electron Microscope ◽  
Dark Field ◽  
Limiting Factor ◽  
Sem Images ◽  
Cross Sectional ◽  
Scanning Transmission

Abstract A novel technique for three-dimensional structural and elemental analyses using a dedicated focused ion beam (FIB) and scanning transmission electron microscope (STEM) has been developed. The system employs an FIB-STEM compatible sample holder with sample stage rotation mechanism. A piece of sample (micro sample) is extracted from the area to be characterized by the micro-sampling technique [1-3]. The micro sample is then transferred onto the tip of the stage (needle stage) and bonded by FIB assisted metal deposition. STEM observation of the micro sample is carried out after trimming the sample into a micro-pillar 2-5 micron squared in cross-section and 10 -15 micron in length (micro-pillar sample). High angle annular dark field (HAADF) STEM, bright field STEM and secondary electron microscopy (SEM) images are obtained at 200kV resulting in threedimensional and cross sectional representations of the microsample. The geometry of the sample and the needle stage allows observation of the sample from all directions. The specific site can be located for further FIB milling whenever it is required. Since the operator can choose materials for the needle stage, the geometry of the original specimen is not a limiting factor for quantitative energy dispersive X-ray (EDX) analysis.

The Method for Retaining an Intermittent Electrical Failure Signature during the Interconnect Immobilization Process throughout Failure Analysis

2009 ◽  
Author(s):  
Julie Schuchman ◽  
Julie Willis
Keyword(s):  
Sample Preparation ◽  
First Generation ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Scanning Transmission Electron Microscope ◽  
Electrical Failure ◽  
Dual Beam ◽  
Transmission Electron ◽  
Scanning Transmission ◽  
Material Sample

Abstract This paper deals primarily with the difficulties and solutions to scanning transmission electron microscope (STEM) sample preparation by dual beam focused ion beam. Approximately twenty major challenges were encountered spanning hardware, software, and material sample preparation. The main focus is upon the variety of challenges which are encountered in trying to implement automated STEM and TEM sample fabrication with minimal operator input and the engineering solutions implemented to overcome these challenges. The automated STEM script has evolved significantly from the first generation attempt and is described in more detail in this paper. The mechanical, software, and materials challenges encountered are also presented. The paper highlights a mechanical issue with the ion aperture motor mechanism, which required extensive troubleshooting to fully diagnose and correct. A long standing software routine had to be modified to fully enable script automation by extending the beam dwell time of the automatic brightness contrast routine.

scholarly journals A FIB Micro-Sampling Technique for Three-Dimensional Characterization of a Site-Specific Defect

2004 ◽  
Vol 12 (6) ◽  
pp. 26-29 ◽  
Author(s):  
Toshie Yaguchi ◽  
Yasushi Kuroda ◽  
Mitsuru Konno ◽  
Takeo Kamino ◽  
Tsuyohsi Ohnishi ◽  
...  
Keyword(s):  
Focused Ion Beam ◽  
Ion Beam ◽  
Semiconductor Devices ◽  
Three Dimensional ◽  
Sampling Technique ◽  
Scanning Transmission Electron Microscope ◽  
Specimen Preparation ◽  
Specimen Holder ◽  
Scanning Transmission ◽  
A Site

In characterization or failure analysis of new materials and semiconductor devices, the requirements for three dimensional observation and analysis are rapidly increasing. We discuss techniques for specimen preparation, three-dimensional observation, and elemental analysis of semiconductor devices that we developed using a system consisting of a dedicated focused ion beam (FIB) instrument and a scanning transmission electron microscope (STEM). The system utilizes a FIB-STEM compatible specimen holder with a specially designed rotation mechanism, which allows 360° rotation of a specimen on a conical stage (needle stub) around the ion beam axis of the FIB system and 360° rotation perpendicular to the electron beam in the STEM. A piece of sample (micro sample) is extracted from a specific-site by the micro-sampling technique and mounted on the needle stub. Instruments used in the study are the Hitachi FB-2100 FIB system with a micro-sampling attachment and the HD-2300 field emission 200kV STEM.

In-Situ Sample Preparation and High-Resolution SEM-STEM Analysis

2004 ◽  
Author(s):  
Richard J. Young ◽  
Michael P. Bernas ◽  
Mary V. Moore ◽  
Young-Chung Wang ◽  
Jay P. Jordan ◽  
...  
Keyword(s):  
Electron Microscope ◽  
High Resolution ◽  
Sample Preparation ◽  
Scanning Transmission Electron Microscopy ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Dual Beam ◽  
Transmission Electron ◽  
Scanning Transmission

Abstract The dual-beam system, which combines a high-resolution scanning electron microscope (SEM) with a focused ion beam (FIB), allows sample preparation, imaging, and analysis to be accomplished in a single tool. This paper discusses how scanning transmission electron microscopy (STEM) with the electron beam enhances the analysis capabilities of the dualbeam. In particular, it shows how, using the combination of in-situ sample preparation and integrated SEM-STEM imaging, more failure analysis and characterization problems can be solved in the dual-beam without needing to use the Ångstrom-level capabilities of the transmission electron microscope (TEM).

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