New Substrate/Buffer Layer Compounds for Epitaxial HTSC Film Growth

1995 ◽  
Vol 401 ◽  
Author(s):  
A. Tauber ◽  
S. C. Tidrow ◽  
W. D. Wilber ◽  
R. D. Finnegan
Keyword(s):  
Thin Films ◽  
Elevated Temperature ◽  
Dielectric Properties ◽  
Solid State ◽  
Buffer Layer ◽  
Solid State Reaction ◽  
Film Growth ◽  
System A ◽  
Htsc Film ◽  
New Form

AbstractA series of compounds in the system A4MeSb13O12 where A=Ba, Sr and Me=Li, Na &K were prepared by solid state reaction at elevated temperature. A new form of Sr4NaSb3O12 was prepared. The compounds were characterized with regard to their lattice parameters, density and dielectric properties. Thin films were prepared by PLD from dense targets and epitaxial relationships identified between YBCO and these compounds.

Formation of Nickel Ferrite Films by Solid-State Reaction

1997 ◽  
Vol 3 (S2) ◽  
pp. 739-740
Author(s):  
Matthew T. Johnson ◽  
Paul G. Kotula ◽  
C. Barry Carter
Keyword(s):  
Thin Films ◽  
Solid State ◽  
Solid State Reaction ◽  
Nickel Ferrite ◽  
Elevated Temperatures ◽  
Film Growth ◽  
Ex Situ ◽  
First Case ◽  
Morphological Differences

Nickel ferrite (NiFe2O4) thin films are of potential interest for magnetic applications. In the present study, the production of NiFe2O4 by solid-state reaction between thin films of hematite (α-Fe2O3) and nickel oxide (NiO) on (0001) sapphire (α-Fe2O3) substrates has been examined. The NiFe2O4 thin films were prepared by two different methods. In the first case the NiFe2O4film was grown in situ in the deposition system, while in the second case the NiFe2O4 film was formed ex situ by reacting at elevated temperatures in air. These two methods of reaction lead to interesting morphological differences in the ferrite layers.Epilayers of α-Fe2O3 followed by NiO were deposited onto (0001) α-Al2O3 by pulsed-laser deposition (PLD) in 6 mTorr O2. NiFe2O4 films were obtained by reacting the starting films in two different ways: in situ (during film growth) and ex situ.. In both cases, the α-Fe2O3 films were grown under the same conditions while those for the deposition of the NiO layers were different.

Peculiarities of Intermetallic Phase Formation in the Process of a Solid State Reaction in (Al/Cu)n Multilayer Thin Films

JOM ◽  
2021 ◽  
Author(s):  
Evgeny T. Moiseenko ◽  
Sergey M. Zharkov ◽  
Roman R. Altunin ◽  
Oleg V. Belousov ◽  
Leonid A. Solovyov ◽  
...  
Keyword(s):  
Thin Films ◽  
Solid State ◽  
Phase Formation ◽  
Solid State Reaction ◽  
Intermetallic Phase ◽  
Multilayer Thin Films

scholarly journals Phase Evolution and Amorphous Stability upon Solid-State Reaction in Superlattice-Like Ge–Sb–Te Combinatorial Thin Films

2020 ◽  
Vol 2 (12) ◽  
pp. 3880-3888
Author(s):  
Jian Hui ◽  
Qingyun Hu ◽  
Yuxi Luo ◽  
Tianxing Lai ◽  
Zhan Zhang ◽  
...  
Keyword(s):  
Thin Films ◽  
Solid State ◽  
Solid State Reaction ◽  
Phase Evolution

Effect of Nd3+ substitution for Bi3+ on the dielectric properties and conduction behavior of Aurivillius NdBi4Ti3FeO15 ceramics

RSC Advances ◽  
2016 ◽  
Vol 6 (25) ◽  
pp. 21254-21260 ◽  
Author(s):  
Fida Rehman ◽  
Hai-Bo Jin ◽  
Lin Wang ◽  
Abbas Tanver ◽  
De-Zhi Su ◽  
...  
Keyword(s):  
Dielectric Properties ◽  
Solid State ◽  
Solid State Reaction ◽  
Conduction Behavior

NdBi4Ti3FeO15 and Bi5Ti3FeO15 ceramics were prepared by solid state reaction.

Continuous and Conformal Lithium Titanate Spinel Thin Films by Solid State Reaction

2018 ◽  
Vol 165 (8) ◽  
pp. B3184-B3193 ◽  
Author(s):  
Nouha Labyedh ◽  
Brecht Put ◽  
Abdel-Aziz El Mel ◽  
Philippe M. Vereecken
Keyword(s):  
Thin Films ◽  
Solid State ◽  
Solid State Reaction ◽  
Lithium Titanate

Dielectric properties and modulus behavior of La0.67Sr0.16Ca0.17MnO3 ceramic prepared by solid state reaction

2019 ◽  
Vol 92 (6) ◽  
pp. 546-555 ◽  
Author(s):  
Za Mohamed ◽  
A. Somrani ◽  
E. K. Hlil ◽  
K. Khirouni
Keyword(s):  
Dielectric Properties ◽  
Solid State ◽  
Solid State Reaction

Heteroepitaxy of P-Doped 3C-SiC on Diamond by VLS Transport

2014 ◽  
Vol 806 ◽  
pp. 33-37
Author(s):  
Arthur Vo-Ha ◽  
Mickaël Rebaud ◽  
Mihai Lazar ◽  
Alexandre Tallaire ◽  
Véronique Soulière ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Solid State ◽  
Epitaxial Growth ◽  
Buffer Layer ◽  
Solid State Reaction ◽  
Silicon Layer ◽  
Diamond Surface ◽  
Heteroepitaxial Growth ◽  
Experimental Parameters ◽  
Vls Growth

This work deals with the selective heteroepitaxial growth of silicon carbide on (100) diamond substrates using the Vapour-Liquid-Solid (VLS) transport. The morphology, the structure and doping were determined using various characterization techniques. In order to achieve succesful heteroepitaxy, the diamond surface was silicided by solid-state reaction between a silicon layer and the substrate at 1350 °C. This allowed forming a SiC buffer layer on which p-doped 3C-SiC(100) islands elongated in the <110> directions were obtained after VLS growth. The influence of the experimental parameters on the epitaxial growth is discussed.

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