3C-SiC Seeded Growth on Diamond Substrate by VLS Transport

This work deals with the localized epitaxial growth of SiC on (100) diamond substrate using the Vapour-Liquid-Solid (VLS) transport. An epitaxial relationship of grown SiC with the seed was succesfully achieved when inserting a silicidation step before the VLS growth. This silicidation consists in the formation of a SiC intermediate layer on the diamond substrate by solid-state reaction with a silicon layer deposited at 1000 or 1350 °C. On the 1350°C formed SiC buffer layer, p-doped 3C-SiC(100) islands elongated in the <110> directions were obtained after VLS growth. For the 1000°C buffer layer, the SiC deposit after VLS growth is much denser but mostly polycrystalline. Interfacial reactivity and diffusion are considered to explain the obtained results.

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Heteroepitaxy of P-Doped 3C-SiC on Diamond by VLS Transport

Materials Science Forum ◽

10.4028/www.scientific.net/msf.806.33 ◽

2014 ◽

Vol 806 ◽

pp. 33-37

Author(s):

Arthur Vo-Ha ◽

Mickaël Rebaud ◽

Mihai Lazar ◽

Alexandre Tallaire ◽

Véronique Soulière ◽

...

Keyword(s):

Silicon Carbide ◽

Solid State ◽

Epitaxial Growth ◽

Buffer Layer ◽

Solid State Reaction ◽

Silicon Layer ◽

Diamond Surface ◽

Heteroepitaxial Growth ◽

Experimental Parameters ◽

Vls Growth

This work deals with the selective heteroepitaxial growth of silicon carbide on (100) diamond substrates using the Vapour-Liquid-Solid (VLS) transport. The morphology, the structure and doping were determined using various characterization techniques. In order to achieve succesful heteroepitaxy, the diamond surface was silicided by solid-state reaction between a silicon layer and the substrate at 1350 °C. This allowed forming a SiC buffer layer on which p-doped 3C-SiC(100) islands elongated in the <110> directions were obtained after VLS growth. The influence of the experimental parameters on the epitaxial growth is discussed.

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Optimization of the Silicidation and Growth Processes for 3C-SiC Heteroepitaxy on Diamond Substrate

Materials Science Forum ◽

10.4028/www.scientific.net/msf.858.155 ◽

2016 ◽

Vol 858 ◽

pp. 155-158 ◽

Cited By ~ 1

Author(s):

Véronique Soulière ◽

Davy Carole ◽

Gabriel Ferro

Keyword(s):

Buffer Layer ◽

Growth Process ◽

Growth Parameters ◽

Silicon Layer ◽

Liquid Silicon ◽

Heteroepitaxial Growth ◽

Growth Processes ◽

Seeding Layer ◽

Diamond Substrate

This work reports on the CVD heteroepitaxial growth of 3C-SiC layers on diamond (100) substrates. To obtain good layer quality, the growth procedure involves a “silicidation” step consisting in depositing a silicon layer by CVD on the diamond substrate, in order to elaborate a very thin SiC buffer layer. 3C-SiC growth is then performed on this SiC seeding layer. Silicidation and growth parameters have been studied in order to improve the quality and the morphology uniformity of the heteroepitaxial layer. The study points out the role of liquid silicon during the growth process.

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Room-temperature growth of ultrasmooth AlN epitaxial thin films on sapphire with NiO buffer layer

Journal of Materials Research ◽

10.1557/jmr.2004.0346 ◽

2004 ◽

Vol 19 (9) ◽

pp. 2725-2729 ◽

Cited By ~ 12

Author(s):

Atsushi Sasaki ◽

Jin Liu ◽

Wakana Hara ◽

Shusaku Akiba ◽

Keisuke Saito ◽

...

Keyword(s):

Thin Films ◽

Buffer Layer ◽

Room Temperature ◽

Epitaxial Thin Films ◽

X Ray Diffraction ◽

Epitaxial Relationship ◽

Heteroepitaxial Structure ◽

Temperature Growth ◽

X Ray ◽

Relationship Of

Room-temperature epitaxy of AlN thin films on sapphire (0001) substrates was achieved by pulsed laser deposition using an epitaxial NiO ultrathin buffer layer (approximately 6 nm thick). Four-circle x-ray diffraction analysis indicates a double heteroepitaxial structure of AlN (0001)/NiO(111)/sapphire (0001) with the epitaxial relationship of AlN [10-10] ‖ NiO [11-2] ‖ sapphire [11-20]. The surface morphology of room-temperature grown AlN thin films was found to be atomically smooth and nanostepped, reflecting the surface of the ultrasmooth sapphire substrate with 0.2-nm-high steps.

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Stabilization of Li0.33La0.55TiO3 Solid Electrolyte Interphase Layer and Enhancement of Cycling Performance of LiNi0.5Co0.3Mn0.2O2 Battery Cathode with Buffer Layer

Nanomaterials ◽

10.3390/nano11040989 ◽

2021 ◽

Vol 11 (4) ◽

pp. 989

Author(s):

Feihu Tan ◽

Hua An ◽

Ning Li ◽

Jun Du ◽

Zhengchun Peng

Keyword(s):

Solid State ◽

Ionic Conductivity ◽

Solid Electrolyte ◽

Buffer Layer ◽

Solid Electrolyte Interphase ◽

Cycling Performance ◽

Physical Contact ◽

Initial State ◽

Amorphous Sio2 ◽

Current Output

All-solid-state batteries (ASSBs) are attractive for energy storage, mainly because introducing solid-state electrolytes significantly improves the battery performance in terms of safety, energy density, process compatibility, etc., compared with liquid electrolytes. However, the ionic conductivity of the solid-state electrolyte and the interface between the electrolyte and the electrode are two key factors that limit the performance of ASSBs. In this work, we investigated the structure of a Li0.33La0.55TiO3 (LLTO) thin-film solid electrolyte and the influence of different interfaces between LLTO electrolytes and electrodes on battery performance. The maximum ionic conductivity of the LLTO was 7.78 × 10−5 S/cm. Introducing a buffer layer could drastically improve the battery charging and discharging performance and cycle stability. Amorphous SiO2 allowed good physical contact with the electrode and the electrolyte, reduced the interface resistance, and improved the rate characteristics of the battery. The battery with the optimized interface could achieve 30C current output, and its capacity was 27.7% of the initial state after 1000 cycles. We achieved excellent performance and high stability by applying the dense amorphous SiO2 buffer layer, which indicates a promising strategy for the development of ASSBs.

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Solid-State Reaction and Diffusion Behaviors of CaFe2O4 and TiO2 at 1373 K to 1473 K

Metallurgical and Materials Transactions B ◽

10.1007/s11663-021-02111-y ◽

2021 ◽

Author(s):

Mingrui Yang ◽

Junyi Xiang ◽

Chenguang Bai ◽

Xuangeng Zhou ◽

Zhongci Liu ◽

...

Keyword(s):

Solid State ◽

Solid State Reaction ◽

And Diffusion ◽

Diffusion Behaviors ◽

Reaction And Diffusion

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Aluminum buffer layer for high durability of all-solid-state switchable mirror based on magnesium-nickel thin film

Applied Physics Letters ◽

10.1063/1.2761842 ◽

2007 ◽

Vol 91 (5) ◽

pp. 051908 ◽

Cited By ~ 35

Author(s):

Kazuki Tajima ◽

Yasusei Yamada ◽

Shanhu Bao ◽

Masahisa Okada ◽

Kazuki Yoshimura

Keyword(s):

Thin Film ◽

Solid State ◽

Buffer Layer ◽

High Durability ◽

Switchable Mirror

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High-resolution transmission electron microscopic investigations of molybdenum thin films on faceted α-Al2O3

Journal of Applied Crystallography ◽

10.1107/s0021889804033126 ◽

2005 ◽

Vol 38 (2) ◽

pp. 260-265 ◽

Cited By ~ 4

Author(s):

Leonore Wiehl ◽

Jens Oster ◽

Michael Huth

Keyword(s):

High Resolution ◽

Three Dimensional ◽

Epitaxial Relationship ◽

Electron Microscopic ◽

Force Microscopy ◽

Atomic Force ◽

Transmission Electron ◽

High Resolution Images ◽

Α Al2o3 ◽

Relationship Of

Epitaxially grown Mo films on a faceted corundum (α-Al2O3)mplane were investigated by transmission electron microscopy. Low- and high-resolution images were taken from a cross-section specimen cut perpendicular to the facets. It was possible to identify unambiguously the crystallographic orientation of these facets and explain the considerable deviation (∼10°) of the experimental interfacet angle, as measured with atomic force microscopy (AFM), from the expected value. For the first time, proof is given for a smooth \{10\bar{1}1\} facet and a curvy facet with orientation near to \{10\bar{1}\bar{2}\}. Moreover, the three-dimensional epitaxial relationship of an Mo film on a faceted corundummsurface was determined.

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In-Situ Laser Processing and Microstructural Characteristics of YBa2Cu3O7−δ Thin Films on Si with TiN Buffer Layer

MRS Proceedings ◽

10.1557/proc-285-311 ◽

1992 ◽

Vol 285 ◽

Cited By ~ 1

Author(s):

P. Tiwari ◽

T. Zheleva ◽

J. Narayan

Keyword(s):

Electron Microscopy ◽

Thin Films ◽

Transition Temperature ◽

Buffer Layer ◽

Processing Parameters ◽

Superconducting Transition ◽

Epitaxial Relationship ◽

Ybco Thin Films ◽

Zero Resistance

ABSTRACTWe have prepared high-quality superconducting YBa2Cu3O7−δ (YBCO) thin films on Si(100) with TiN as a buffer layer using in-situ multitarget deposition system. Both TiN and YBCO thin films were deposited sequentially by KrF excitner laser ( λ = 248 nm ) at substrate temperature of 650°C. Thin films were characterized using X-ray diffraction (XRD), four-point-probe ac resistivity, scanning electron microscopy (SEM), transmission electron microscopy (TEM), and Rutherford backscattering (RBS). The TiN buffer layer was epitaxial and the epitaxial relationship was found to be cube on cube with <100> TiN // <100> Si. YBCO thin films on Si with TiN buffer layer showed the transition temperature of 90–92K with Tco (zero resistance temperature) of ∼84K. We have found that the quality of the buffer layer is very important in determining the superconducting transition temperature of the thin film. The effects of processing parameters and the correlation of microstructural features with superconducting properties are discussed indetail.

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Buffer Layer Thickness and the Properties of InN Thin Films on AIN- Seeded (00.1) Sapphire And (111) Silicon

MRS Proceedings ◽

10.1557/proc-339-509 ◽

1994 ◽

Vol 339 ◽

Cited By ~ 1

Author(s):

T. J. Kistenmacher ◽

S. A. Ecelberger ◽

W. A. Bryden

Keyword(s):

Thin Films ◽

Buffer Layer ◽

Layer Thickness ◽

Electrical Transport ◽

Lattice Mismatch ◽

Electrical Mobility ◽

Seeded Growth ◽

Electrical Transport Properties ◽

Buffer Layer Thickness ◽

Homogeneous Strain

ABSTRACTIntroduction of a buffer layer to facilitate heteroepitaxy in thin films of the Group IIIA nitrides has had a tremendous impact on growth morphology and electrical transport. While AIN- and self-seeded growth of GaN has captured the majority of attention, the use of AIN-buffered substrates for InN thin films has also had considerable success. Herein, the properties of InN thin films grown by reactive magnetron sputtering on AIN-buffered (00.1) sapphire and (111) silicon are presented and, in particular, the evolution of the structural and electrical transport properties as a function of buffer layer sputter time (corresponding to thicknesses from ∼50Å to ∼0.64 μm) described. Pertinent results include: (a) for the InN overlayer, structural coherence and homogeneous strain normal to the (00.1) growth plane are highly dependent on the thickness of the AIN-buffer layer; (b) the homogeneous strain in the AIN-buffer layer is virtually nonexistent from a thickness of 200Å (where a significant X-ray intensity for (00.2)AIN is observed); and (c) the n-type electrical mobility for films on AIN-nucleated (00.1) sapphire is independent of AIN-buffer layer thickness, owing to divergent variations in carrier concentration and film resistivity. These effects are in the main interpreted as arising from a competition between the lattice mismatch of the InN overlayer with the substrate and with the AIN-buffer layer.

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Thermal Chemical Vapor Deposition of Epitaxial Rhombohedral Boron Nitride from Trimethylboron and Ammonia

10.26434/chemrxiv.7447397 ◽

2018 ◽

Author(s):

Laurent Souqui ◽

Henrik Pedersen ◽

Hans Högberg

Keyword(s):

Chemical Vapor Deposition ◽

Boron Nitride ◽

Vapor Deposition ◽

Chemical Vapor ◽

Epitaxial Relationship ◽

Out Of Plane ◽

Α Al2o3 ◽

Favorable Conditions ◽

Relationship Of ◽

Rhombohedral Boron

Epitaxial rhombohedral boron nitride films were deposited on α-Al2O3(001) substrates by chemical vapor deposition, using trimethylboron, ammonia, and with a low concentration of silane in the growth flux. The depositions were performed at temperatures from 1200 to 1485 °C, pressures from 30 to 90 mbar and N/B ratios from 321 to 1286. The most favorable conditions for epitaxy were: a temperature of 1400 °C, N/B around 964, and pressures below 40 mbar. Analysis by thin film X-ray diffraction showed that most deposited films were polytype-pure epitaxial r-BN with an out-of-plane epitaxial relationship of r-BN[001]∥ w-AlN[001]∥ α-Al2O3[001] and with two in-plane relationships of r-BN[110]∥ w-AlN[110]∥ α-Al2O3[100] and r-BN[110]∥ w-AlN[110]∥ α-Al2O3[1̅00] due to twinning.

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