Effect of Tetramethyl Ammonium Hydroxide on Dispersion of the Silicon Carbide Submicron Powders

2014 ◽  
Vol 809-810 ◽  
pp. 213-217
Author(s):  
Nan Wang ◽  
Li Rong Deng ◽  
Xiao Gang Wang ◽  
Shu He Lu

The distributed processing of β-SiC submicron powders were carried out by tetramethyl ammonium hydroxide (TMAH). The effects of dispersant on the dispersion stability of the β-SiC powders were investigated by the particle size, flow characteristics, morphology and other physical properties of the powder before and after dispersed treatment. The results show that the best dispersing state of SiC is obtained by using the ultrasonic 7mins. In these conditions, the suspension solid content of β-SiC is 8%, and the dosage of TMAH is 8wt.%. An optimum amount of TMAH is proved as 8wt.% when the solid content is kept as 8wt.%. The powder particle size has been reduced from 0.73μm to 0.45μm, and its flowability has improved significantly after low temperature drying. The dispersed powder has small particle size, uniform distribution and excellent dispersion stability.

2019 ◽  
Vol 273 ◽  
pp. 71-76 ◽  
Author(s):  
Daniélen dos Santos Silva ◽  
Carine Souza dos Santos ◽  
Luzia Aparecida Pando ◽  
Mário Sérgio Rocha Gomes ◽  
Cleber Galvão Novaes ◽  
...  

2012 ◽  
Vol 30 (7) ◽  
pp. 724-734 ◽  
Author(s):  
Syouhei Nishihama ◽  
Miuki Murakami ◽  
Naoko Y. Igarashi ◽  
Katsutoshi Yamamoto ◽  
Kazuharu Yoshizuka

1996 ◽  
Vol 74 (S1) ◽  
pp. 79-84 ◽  
Author(s):  
S. Naseh ◽  
L. M. Landsberger ◽  
M. Kahrizi ◽  
M. Paranjape

Anisotropic etching of silicon in tetramethyl ammonium hydroxide (TMAH) is receiving attention as a relatively nontoxic alternative anisotropic etchant for silicon (Si), for the fabrication of microelectromechanical systems, sensors, and actuators. This work presents experimental investigations on several aspects of anisotropic etching of Si in TMAH. The effects of temperature and concentration on etch rates of {100} and {110} wafers are characterized. Several previously unreported experimental findings aimed at better understanding the atomic level mechanisms are presented: underetch-rate variation with mask-edge deviation, an investigation of stirring, and a subtle effect of applied bending stress.


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