Atomic-Scale Defects in Silicon Carbide for Quantum Sensing Applications
2015 ◽
Vol 821-823
◽
pp. 355-358
Keyword(s):
Atomic-scale defects in silicon carbide exhibit very attractive quantum properties that can be exploited to provide outstanding performance in various sensing applications. Here we provide the results of our studies of the spin-optical properties of the vacancy related defects in SiC. Our studies show that several spin-3/2 defects in silicon carbide crystal are characterized by nearly temperature independent axial crystal fields, which makes these defects very attractive for vector magnetometry. The zero-field splitting of another defect exhibits on contrast a giant thermal shift of 1.1 MHz/K at room temperature, and can be used for temperature sensing applications.
2006 ◽
Vol 61
(5-6)
◽
pp. 289-292
◽
2007 ◽
Vol 68
(3)
◽
pp. 665-668
◽
Keyword(s):
2018 ◽
Vol 51
(33)
◽
pp. 333002
◽
Keyword(s):
2010 ◽
Vol 645-648
◽
pp. 403-406
◽
Keyword(s):
1970 ◽
Vol 2
(1)
◽
pp. 42-46
◽
Keyword(s):
Keyword(s):
1998 ◽
Vol 30
(3)
◽
pp. 373-380
Keyword(s):