Creation of silicon vacancy in silicon carbide by proton beam writing toward quantum sensing applications

Proton beam writing was carried out into high purity semi-insulating 4H-SiC bulk substrates. Luminescent defects created in the SiC by proton beam writing using 1.7 MeV-proton micro beams were investigated at room temperature using confocal laser scanning microscope. As a result, photoluminescence peak around 900 nm associated with silicon vacancy was observed for the irradiated SiC without post implantation process such as annealing. The overall depth profile of photon counts detected from irradiated areas is in good agreement with simulated vacancy depth profile. This suggests that silicon vacancy can be applied to ion tracking detector. In addition, since silicon vacancy is known as single photon source of which spins can be controlled at RT, PBW is expected to be a useful tool to fabricate spin qubits.

Download Full-text

Atomic-Scale Defects in Silicon Carbide for Quantum Sensing Applications

Materials Science Forum ◽

10.4028/www.scientific.net/msf.821-823.355 ◽

2015 ◽

Vol 821-823 ◽

pp. 355-358

Author(s):

Vladimir Dyakonov ◽

Hannes Kraus ◽

V.A. Soltamov ◽

Franziska Fuchs ◽

Dmitrij Simin ◽

...

Keyword(s):

Silicon Carbide ◽

Room Temperature ◽

Atomic Scale ◽

Zero Field ◽

Zero Field Splitting ◽

Crystal Fields ◽

Quantum Properties ◽

Sensing Applications ◽

Quantum Sensing ◽

Thermal Shift

Atomic-scale defects in silicon carbide exhibit very attractive quantum properties that can be exploited to provide outstanding performance in various sensing applications. Here we provide the results of our studies of the spin-optical properties of the vacancy related defects in SiC. Our studies show that several spin-3/2 defects in silicon carbide crystal are characterized by nearly temperature independent axial crystal fields, which makes these defects very attractive for vector magnetometry. The zero-field splitting of another defect exhibits on contrast a giant thermal shift of 1.1 MHz/K at room temperature, and can be used for temperature sensing applications.

Download Full-text

Three-Dimensional Proton Beam Writing of Optically Active Coherent Vacancy Spins in Silicon Carbide

Nano Letters ◽

10.1021/acs.nanolett.6b05395 ◽

2017 ◽

Vol 17 (5) ◽

pp. 2865-2870 ◽

Cited By ~ 39

Author(s):

H. Kraus ◽

D. Simin ◽

C. Kasper ◽

Y. Suda ◽

S. Kawabata ◽

...

Keyword(s):

Silicon Carbide ◽

Proton Beam ◽

Three Dimensional ◽

Optically Active ◽

Proton Beam Writing

Download Full-text

Creation of Color Centers in SiC PN Diodes Using Proton Beam Writing

Materials Science Forum ◽

10.4028/www.scientific.net/msf.963.709 ◽

2019 ◽

Vol 963 ◽

pp. 709-713

Author(s):

Yoji Chiba ◽

Yuichi Yamazaki ◽

Takahiro Makino ◽

Shinichiro Sato ◽

Naoto Yamada ◽

...

Keyword(s):

Magnetic Resonance ◽

Proton Beam ◽

Room Temperature ◽

Color Centers ◽

Silicon Vacancy ◽

Proton Beam Writing ◽

Pn Junction ◽

Optically Detected Magnetic Resonance ◽

Junction Diode ◽

Optically Detected

We demonstrated that silicon vacancy (VSi) can be created in SiC pn junction diode by proton beam writing (PBW) without degradation of the diode performance. The VSi showed the same specific emission for both optically and electrically excitation, which suggests that electrically controllable VSi was created. In addition, optically detected magnetic resonance (ODMR) signal was successfully detected from optically excited VSi at room temperature. This result suggests that VSi introduced into the device by PBW still maintain spin manipulating capability, which is an important step toward realizing SiC devices internally equipped with a VSi-based quantum sensor.

Download Full-text

Terahertz quantum sensing

Science Advances ◽

10.1126/sciadv.aaz8065 ◽

2020 ◽

Vol 6 (11) ◽

pp. eaaz8065 ◽

Cited By ~ 11

Author(s):

Mirco Kutas ◽

Björn Haase ◽

Patricia Bickert ◽

Felix Riexinger ◽

Daniel Molter ◽

...

Keyword(s):

Layer Thickness ◽

Region Of Interest ◽

Coherent Detection ◽

Semiconductor Detectors ◽

Terahertz Frequency ◽

Sensing Applications ◽

Highly Sensitive ◽

Quantum Sensing ◽

Thickness Measurements ◽

Detection Schemes

Quantum sensing is highly attractive for accessing spectral regions in which the detection of photons is technically challenging: Sample information is gained in the spectral region of interest and transferred via biphoton correlations into another spectral range, for which highly sensitive detectors are available. This is especially beneficial for terahertz radiation, where no semiconductor detectors are available and coherent detection schemes or cryogenically cooled bolometers have to be used. Here, we report on the first demonstration of quantum sensing in the terahertz frequency range in which the terahertz photons interact with a sample in free space and information about the sample thickness is obtained by the detection of visible photons. As a first demonstration, we show layer thickness measurements with terahertz photons based on biphoton interference. As nondestructive layer thickness measurements are of high industrial relevance, our experiments might be seen as a first step toward industrial quantum sensing applications.

Download Full-text

Characterization of channel waveguides and tunable microlasers in SU8 doped with rhodamine B fabricated using proton beam writing

Journal of Physics D Applied Physics ◽

10.1088/0022-3727/41/19/192002 ◽

2008 ◽

Vol 41 (19) ◽

pp. 192002 ◽

Cited By ~ 9

Author(s):

S Venugopal Rao ◽

A A Bettiol ◽

F Watt

Keyword(s):

Proton Beam ◽

Rhodamine B ◽

Proton Beam Writing ◽

Channel Waveguides

Download Full-text

Surface Characterization of Silicon Carbide Following Shallow Implantation of Palladium Ions

MRS Proceedings ◽

10.1557/proc-0900-o12-15 ◽

2005 ◽

Vol 900 ◽

Author(s):

Claudiu I. Muntele ◽

Sergey Sarkisov ◽

Iulia Muntele ◽

Daryush Ila

Keyword(s):

Silicon Carbide ◽

Surface Characterization ◽

Wide Bandgap ◽

Electrical Contacts ◽

Temperature Dependent ◽

Wide Bandgap Semiconductor ◽

Hydrogen Sensing ◽

Fast Switching ◽

Sensing Applications

ABSTRACTSilicon carbide is a promising wide-bandgap semiconductor intended for use in fabrication of high temperature, high power, and fast switching microelectronics components running without cooling. For hydrogen sensing applications, silicon carbide is generally used in conjunction with either palladium or platinum, both of them being good catalysts for hydrogen. Here we are reporting on the temperature-dependent surface morphology and depth profile modifications of Au, Ti, and W electrical contacts deposited on silicon carbide substrates implanted with 20 keV Pd ions.

Download Full-text