Experimental Study of High-Temperature Switching Performance of 1.2kV SiC JBSFET in Comparison with 1.2kV SiC MOSFET

The high-temperature switching performance of a 1.2kV SiC JBSFET is compared with a 1.2kV SiC MOSFET using a clamped inductive load switching circuit representing typical H-bridge inverters. The switching losses of the SiC MOSFET are also evaluated with a SiC JBS Diode connected antiparallel to it. Measurements are made with different high-side and low-side device options across a range of case temperatures. The JBSFET is observed to display a reduction in peak turn-on current – up to 18.9% at 150°C and a significantly lesser turn-on switching loss – up to 46.6% at 150°C, compared to the SiC MOSFET.

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Electrical Characterization of 1.2 kV-Class SiC MOSFET at High Temperature up to 380°C

Materials Science Forum ◽

10.4028/www.scientific.net/msf.858.885 ◽

2016 ◽

Vol 858 ◽

pp. 885-888 ◽

Cited By ~ 7

Author(s):

Yuichiro Nanen ◽

Masatoshi Aketa ◽

Yuki Nakano ◽

Hirokazu Asahara ◽

Takashi Nakamura

Keyword(s):

High Temperature ◽

Temperature Dependence ◽

Electrical Characterization ◽

Transfer Time ◽

Static Characteristics ◽

Power Mosfets ◽

Turn On ◽

Switching Losses ◽

Gate Resistance

Dynamic and static characteristics of SiC power MOSFETs at high temperature up to 380°C were investigated. Investigated devices have exhibited a behavior as a normally-off MOSFET even at such high temperature as 380°C. Temperature dependence of the MOSFET characteristics are reported in this paper, such as threshold voltage (VTH), on-resistance, internal gate resistance, and turn-on and turn-off losses (EON, EOFF). EON decreases and EOFF increases with increased temperature. Temperature dependence of switching losses is affected by transfer time of VDS, which was mainly determined from VTH.

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Switching Performance of Epitaxially Grown Normally-Off 4H-SiC JFET

Materials Science Forum ◽

10.4028/www.scientific.net/msf.600-603.1067 ◽

2008 ◽

Vol 600-603 ◽

pp. 1067-1070 ◽

Cited By ~ 4

Author(s):

Rajesh Kumar Malhan ◽

S.J. Rashid ◽

Mitsuhiro Kataoka ◽

Yuuichi Takeuchi ◽

Naohiro Sugiyama ◽

...

Keyword(s):

Switching Performance ◽

Fast Switching ◽

Turn On ◽

Switching Losses ◽

Dual Gate ◽

Layer Resistance ◽

Heavily Doped ◽

Effect Transistor ◽

P Type ◽

State Resistance

Static and dynamic behavior of the epitaxially grown dual gate trench 4H-SiC junction field effect transistor (JFET) is investigated. Typical on-state resistance Ron was 6 – 10mΩcm2 at VGS = 2.5V and the breakdown voltage between the range of 1.5 – 1.8kV was realized at VGS = −5V for normally-off like JFETs. It was found that the turn-on energy delivers the biggest part of the switching losses. The dependence of switching losses from gate resistor is nearly linear, suggesting that changing the gate resistor, a way similar to Si-IGBT technology, can easily control di/dt and dv/dt. Turn-on losses at 200°C are lower compared to those at 25°C, which indicates the influence of the high internal p-type gate layer resistance. Inductive switching numerical analysis suggested the strong influence of channel doping conditions on the turn-on switching performance. The fast switching normally-off JFET devices require heavily doped narrow JFET channel design.

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2 KV 4H-SiC DMOSFETS FOR LOW LOSS, HIGH FREQUENCY SWITCHING APPLICATIONS

International Journal of High Speed Electronics and Systems ◽

10.1142/s0129156404002983 ◽

2004 ◽

Vol 14 (03) ◽

pp. 879-883 ◽

Cited By ~ 6

Author(s):

SEI-HYUNG RYU ◽

SUMI KRISHNASWAMI ◽

MRINAL DAS ◽

JAMES RICHMOND ◽

ANANT ANANT AGARWAL ◽

...

Keyword(s):

High Speed ◽

Power Device ◽

Switching Loss ◽

Power Mosfets ◽

Switching Performance ◽

Switching Losses ◽

Order Of Magnitude ◽

Drain Bias ◽

Silicon Device ◽

High Speed Switching

Due to the high critical field in 4 H - SiC , the drain charge and switching loss densities in a SiC power device are approximately 10X higher than that of a silicon device. However, for the same voltage and resistance ratings, the device area is much smaller for the 4 H - SiC device. Therefore, the total drain charge and switching losses are much lower for the 4 H - SiC power device. A 2.3 kV, 13.5 mΩ-cm2 4 H - SiC power DMOSFET with a device area of 2.1 mm × 2.1 mm has been demonstrated. The device showed a stable avalanche at a drain bias of 2.3 kV, and an on-current of 5 A with a VGS of 20 V and a VDS of 2.6 V. Approximately an order of magnitude lower parasitic capacitance values, as compared to those of commercially available silicon power MOSFETs, were measured for the 4 H - SiC power DMOSFET. This suggests that the 4 H - SiC DMOSFET can provide an order of magnitude improvement in switching performance in high speed switching applications.

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4H-SiC DMOSFETs for High Speed Switching Applications

Materials Science Forum ◽

10.4028/www.scientific.net/msf.483-485.797 ◽

2005 ◽

Vol 483-485 ◽

pp. 797-800 ◽

Cited By ~ 13

Author(s):

Sei Hyung Ryu ◽

Sumi Krishnaswami ◽

Mrinal K. Das ◽

Jim Richmond ◽

Anant K. Agarwal ◽

...

Keyword(s):

High Speed ◽

Power Device ◽

Switching Loss ◽

Power Mosfets ◽

Switching Performance ◽

Switching Losses ◽

Order Of Magnitude ◽

Drain Bias ◽

Silicon Device ◽

High Speed Switching

Due to the high critical field in 4H-SiC, the drain charge and switching loss densities in a SiC power device are approximately 10X higher than that of a silicon device. However, for the same voltage and resistance ratings, the device area is much smaller for the 4H-SiC device. Therefore, the total drain charge and switching losses are much lower for the 4H-SiC power device. A 2.3 kV, 13.5 mW-cm2 4H-SiC power DMOSFET with a device area of 2.1 mm x 2.1 mm has been demonstrated. The device showed a stable avalanche at a drain bias of 2.3 kV, and an on-current of 5 A with a VGS of 20 V and a VDS of 2.6 V. Approximately an order of magnitude lower parasitic capacitance values, as compared to those of commercially available silicon power MOSFETs, were measured for the 4H-SiC power DMOSFET. This suggests that the 4H-SiC DMOSFET can provide an order of magnitude improvement in switching performance in high speed switching applications.

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Impact of Cell Geometry on Zero-Energy Turn-Off of SiC Power MOSFETs

Materials Science Forum ◽

10.4028/www.scientific.net/msf.924.756 ◽

2018 ◽

Vol 924 ◽

pp. 756-760 ◽

Cited By ~ 1

Author(s):

Xue Qing Liu ◽

Sauvik Chowdhury ◽

Collin W. Hitchcock ◽

T. Paul Chow

Keyword(s):

Unit Cell ◽

Switching Loss ◽

Calculation Methods ◽

Cell Geometry ◽

Zero Energy ◽

Power Mosfets ◽

Turn On ◽

Switching Losses ◽

The Impact ◽

Refined Calculation

1200V SiC power MOSFETs of various cell geometries are modeled in Synopsis Inc. Sentaurus TCAD. The impact of cell geometry on switching loss is studied by comparing the turn-on and turn-off losses using refined calculation methods. Under optimum circuit conditions, two different novel unit cell designs each achieve lower switching losses than conventional designs. For all the designs, lossless turn-on is impossible but lossless turn-off is achievable under circuit and biasing conditions that produce sufficiently rapid gate slew.

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1700V, 20A 4H-SiC DMOSFETs Optimized for High Temperature Operation

Materials Science Forum ◽

10.4028/www.scientific.net/msf.679-680.633 ◽

2011 ◽

Vol 679-680 ◽

pp. 633-636 ◽

Cited By ~ 6

Author(s):

Brett A. Hull ◽

Sei Hyung Ryu ◽

Q. Jon Zhang ◽

Charlotte Jonas ◽

Michael J. O'Loughlin ◽

...

Keyword(s):

High Temperature ◽

Leakage Current ◽

Entire Temperature Range ◽

Electrical Characteristics ◽

Switching Circuit ◽

Inductive Load ◽

Temperature Range ◽

Continuous Current ◽

Switching Characteristics ◽

High Temperature Operation

DMOSFETs fabricated in 4H-SiC with capabilities for blocking in excess of 1700V and conducting 20A continuous current in the on-state are presented. These SiC DMOSFETs remain functional to temperatures in excess of 225°C, with leakage current at 1700V at 225°C of less than 5 A with VGS = 0V. The DMOSFETs show excellent switching characteristics, with total switching energy of 1.8 to 1.95 mJ over the entire temperature range of testing (25°C to 200°C), when switched from the blocking state at 1200V to conducting at 20A in a clamped inductive load switching circuit. The electrical characteristics are compared to commercially available Si IGBTs rated to 1700V with similar current ratings as the SiC DMOSFET described herein.

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Laboratory Experimental Study on New Polymer in Xinjiang Lukeqin High Temperature and High Salt Reservoir

10.2118/193649-ms ◽

2018 ◽

Author(s):

M. Wang ◽

Q. Xiao ◽

Y. Gou ◽

F. Deng ◽

B. Wang ◽

...

Keyword(s):

Experimental Study ◽

High Temperature ◽

High Salt

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Design and Switching Characteristics of Flip-Chip GaN Half-Bridge Modules Integrated with Drivers

Applied Sciences ◽

10.3390/app11157057 ◽

2021 ◽

Vol 11 (15) ◽

pp. 7057

Author(s):

Lin Wang ◽

Zhe Cheng ◽

Zhi-Guo Yu ◽

De-Feng Lin ◽

Zhe Liu ◽

...

Keyword(s):

Flip Chip ◽

High Electron Mobility Transistors ◽

Wire Bonding ◽

High Electron ◽

Parasitic Inductance ◽

Switching Performance ◽

Turn On ◽

Electron Mobility Transistors ◽

Chip Technology ◽

Switching Characteristics

Half-bridge modules with integrated GaN high electron mobility transistors (HEMTs) and driver dies were designed and fabricated in this research. Our design uses flip-chip technology for fabrication, instead of more generally applied wire bonding, to reduce parasitic inductance in both the driver-gate and drain-source loops. Modules were prepared using both methods and the double-pulse test was applied to evaluate and compare their switching characteristics. The gate voltage (Vgs) waveform of the flip-chip module showed no overshoot during the turn-on period, and a small oscillation during the turn-off period. The probabilities of gate damage and false turn-on were greatly reduced. The inductance in the drain-source loop of the module was measured to be 3.4 nH. The rise and fall times of the drain voltage (Vds) were 12.9 and 5.8 ns, respectively, with an overshoot of only 4.8 V during the turn-off period under Vdc = 100 V. These results indicate that the use of flip-chip technology along with the integration of GaN HEMTs with driver dies can effectively reduce the parasitic inductance and improve the switching performance of GaN half-bridge modules compared to wire bonding.

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