Effect of Argon during Diamond Deposition by Hot Filament Chemical Vapor Deposition

2016 ◽  
Vol 869 ◽  
pp. 721-726 ◽  
Author(s):  
Divani C. Barbosa ◽  
Ursula Andréia Mengui ◽  
Mauricio R. Baldan ◽  
Vladimir J. Trava-Airoldi ◽  
Evaldo José Corat
Keyword(s):  
Growth Rate ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Diamond Growth ◽  
Gas Mixture ◽  
X Ray Diffraction ◽  
Hot Filament ◽  
Argon Content

The effect of argon content upon the growth rate and the properties of diamond thin films grown with different grains sizes are explored. An argon-free and argon-rich gas mixture of methane and hydrogen is used in a hot filament chemical vapor deposition reactor. Characterization of the films is accomplished by scanning electron microscopy, Raman spectroscopy and high-resolution x-ray diffraction. An extensive comparison of the growth rate values and films morphologies obtained in this study with those found in the literature suggests that there are distinct common trends for microcrystalline and nanocrystalline diamond growth, despite a large variation in the gas mixture composition. Included is a discussion of the possible reasons for these observations.

scholarly journals Unusual Dependence of the Diamond Growth Rate on the Methane Concentration in the Hot Filament Chemical Vapor Deposition Process

Materials ◽  
2021 ◽  
Vol 14 (2) ◽  
pp. 426
Author(s):  
Byeong-Kwan Song ◽  
Hwan-Young Kim ◽  
Kun-Su Kim ◽  
Jeong-Woo Yang ◽  
Nong-Moon Hwang
Keyword(s):  
Growth Rate ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Methane Concentration ◽  
Chemical Vapor ◽  
Diamond Growth ◽  
Lower Growth ◽  
Filament Temperature ◽  
Diamond Phase ◽  
Hot Filament

Although the growth rate of diamond increased with increasing methane concentration at the filament temperature of 2100 °C during a hot filament chemical vapor deposition (HFCVD), it decreased with increasing methane concentration from 1% CH4 –99% H2 to 3% CH4 –97% H2 at 1900 °C. We investigated this unusual dependence of the growth rate on the methane concentration, which might give insight into the growth mechanism of a diamond. One possibility would be that the high methane concentration increases the non-diamond phase, which is then etched faster by atomic hydrogen, resulting in a decrease in the growth rate with increasing methane concentration. At 3% CH4 –97% H2, the graphite was coated on the hot filament both at 1900 °C and 2100 °C. The graphite coating on the filament decreased the number of electrons emitted from the hot filament. The electron emission at 3% CH4 –97% H2 was 13 times less than that at 1% CH4 –99% H2 at the filament temperature of 1900 °C. The lower number of electrons at 3% CH4 –97% H2 was attributed to the formation of the non-diamond phase, which etched faster than diamond, resulting in a lower growth rate.

A study of texture in diamond films as functions of methane concentration during chemical vapor deposition and post-growth hydrogen treatment

1995 ◽  
Vol 10 (7) ◽  
pp. 1764-1771 ◽  
Author(s):  
D. Ganesana ◽  
S.C. Sharma
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Diamond Films ◽  
Chemical Vapor ◽  
Hydrogen Treatment ◽  
X Ray Diffraction ◽  
X Ray ◽  
Crystallographic Planes ◽  
Hot Filament

We have studied effects of hydrogen on texture in diamond films grown by hot filament assisted chemical vapor deposition by utilizing x-ray diffraction (XRD). We present results for the relative intensities of the XRD peaks originating from the (111). (220), and (400) crystallographic planes as functions of CH4/H2 makeup during growth and post-growth H2 treatment of the films. The texture of the films can be controlled by varying composition of the CH4/H2 mixture during growth and also by subjecting films to hydrogen treatment. The complementary characterization of these films by XRD, Raman spectroscopy, and positron annihilation techniques exemplifies a correlation among film texture, diamond contcnt, and dcnsity of the microvoids in the films.

Diamond growth on thin Ti wafers via chemical vapor deposition

1995 ◽  
Vol 10 (11) ◽  
pp. 2685-2688 ◽  
Author(s):  
Qijin Chen ◽  
Zhangda Lin
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Titanium Substrate ◽  
Chemical Vapor ◽  
Low Pressure ◽  
Diamond Growth ◽  
X Ray ◽  
Hot Filament ◽  
Insight Into

Diamond film was synthesized on thin Ti wafers (as thin as 40 μm) via hot filament chemical vapor deposition (HFCVD). The hydrogen embrittlement of the titanium substrate and the formation of a thick TiC interlayer were suppressed. A very low pressure (133 Pa) was employed to achieve high-density rapid nucleation and thus to suppress the formation of TiC. Oxygen was added to source gases to lower the growth temperature and therefore to slow down the hydrogenation of the thin Ti substrate. The role of the very low pressure during nucleation is discussed, providing insight into the nucleation mechanism of diamond on a titanium substrate. The as-grown diamond films were characterized by scanning electron microscopy (SEM), Raman spectroscopy, and x-ray analysis.

Characterization of undoped and boron-doped polycrystalline diamond films synthesized by hot-filament chemical vapor deposition using methanol

1994 ◽  
Vol 3 (4-6) ◽  
pp. 618-622 ◽  
Author(s):  
Takashi Sugino ◽  
Kiyoshi Karasutani ◽  
Fumihiro Mano ◽  
Hiroya Kataoka ◽  
Junji Shirafuji ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Diamond Films ◽  
Chemical Vapor ◽  
Polycrystalline Diamond ◽  
Boron Doped ◽  
Hot Filament

scholarly journals Microstructural Characterization of Multiphase Coatings Produced By Chemical Vapor Deposition

1989 ◽  
Vol 168 ◽  
Author(s):  
R. A. Lowden ◽  
K. L. More ◽  
T. M. Besmann ◽  
R. D. James
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Analytical Electron Microscopy ◽  
Chemical Vapor ◽  
Microstructural Characterization ◽  
X Ray Diffraction ◽  
Experimental Conditions ◽  
Analytical Electron ◽  
Scanning Transmission

AbstractChemical vapor deposition has been utilized to produce ternary, multiphase coatings of various compositions of silicon carbide (SiC) with Ti, Cr, and Mo. Thermodynamic calculations have been performed for a variety of experimental conditions in each system. Scanning, transmission and analytical electron microscopy, and X-ray diffraction techniques have been used to characterize the microstructures and to determine compositions.

Growth of Cubic Silicon Carbide on Silicon Using Hot Filament CVD

2017 ◽  
Vol 897 ◽  
pp. 91-94
Author(s):  
Philip Hens ◽  
Ryan Brow ◽  
Hannah Robinson ◽  
Michael Cromar ◽  
Bart van Zeghbroeck
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Degrees Of Freedom ◽  
Thick Layer ◽  
Chemical Vapor ◽  
Silicon Substrates ◽  
X Ray Diffraction ◽  
Hot Filament ◽  
Cubic Silicon Carbide ◽  
First Time

In this paper, we report, for the first time, growth of high-quality single-crystalline 3C-SiC on silicon substrates using Hot Filament Chemical Vapor Deposition (HF-CVD). Rocking curve X-Ray diffraction (XRD) measurements revealed a full-width at half maximum (FWHM) as low as 333 arcsec for a 15 μm thick layer. Low tensile strain, below 0.1%, was measured using Raman spectroscopy. This quality was achieved with a carefully optimized process making use of the additional degrees of freedom the hot filaments create. For example, the hot filaments allow for precursor pre-cracking. Additionally, they allow a tuning of the vertical thermal gradient which creates an improved thermal field compared to classic Chemical Vapor Deposition techniques used for the deposition of this material today.

Characterization of diamond nucleation on Fe/Si substrate by hot-filament chemical vapor deposition

Vacuum ◽  
1993 ◽  
Vol 44 (1) ◽  
pp. 1-5 ◽  
Author(s):  
Kenji Kobayashi ◽  
Tomoyasu Nakano ◽  
Nobuki Mutsukura ◽  
Yoshio Machi
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Si Substrate ◽  
Diamond Nucleation ◽  
Hot Filament
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