Microstructural Characterization of Multiphase Coatings Produced By Chemical Vapor Deposition

AbstractChemical vapor deposition has been utilized to produce ternary, multiphase coatings of various compositions of silicon carbide (SiC) with Ti, Cr, and Mo. Thermodynamic calculations have been performed for a variety of experimental conditions in each system. Scanning, transmission and analytical electron microscopy, and X-ray diffraction techniques have been used to characterize the microstructures and to determine compositions.

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Effect of Argon during Diamond Deposition by Hot Filament Chemical Vapor Deposition

Materials Science Forum ◽

10.4028/www.scientific.net/msf.869.721 ◽

2016 ◽

Vol 869 ◽

pp. 721-726 ◽

Cited By ~ 1

Author(s):

Divani C. Barbosa ◽

Ursula Andréia Mengui ◽

Mauricio R. Baldan ◽

Vladimir J. Trava-Airoldi ◽

Evaldo José Corat

Keyword(s):

Growth Rate ◽

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Chemical Vapor ◽

Diamond Growth ◽

Gas Mixture ◽

X Ray Diffraction ◽

Hot Filament ◽

Argon Content

The effect of argon content upon the growth rate and the properties of diamond thin films grown with different grains sizes are explored. An argon-free and argon-rich gas mixture of methane and hydrogen is used in a hot filament chemical vapor deposition reactor. Characterization of the films is accomplished by scanning electron microscopy, Raman spectroscopy and high-resolution x-ray diffraction. An extensive comparison of the growth rate values and films morphologies obtained in this study with those found in the literature suggests that there are distinct common trends for microcrystalline and nanocrystalline diamond growth, despite a large variation in the gas mixture composition. Included is a discussion of the possible reasons for these observations.

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Understanding the Growth Mechanisms of Tin Oxide Nanowires by Chemical Vapor Deposition

Journal of Nanoscience and Nanotechnology ◽

10.1166/jnn.2021.19092 ◽

2021 ◽

Vol 21 (4) ◽

pp. 2538-2544

Author(s):

Nguyen Minh Hieu ◽

Nguyen Hoang Hai ◽

Mai Anh Tuan

Keyword(s):

Electron Microscopy ◽

Transmission Electron Microscopy ◽

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Chemical Vapor ◽

Chemical Mapping ◽

X Ray Diffraction ◽

Lattice Constants ◽

Transmission Electron ◽

Scanning Transmission

Tin oxides nanowires were prepared by chemical vapor deposition using shadow mask. X-ray diffraction indicated that the products were tetragonal having crystalline structure with lattice constants a = 0.474 nm and c = 0.318 nm. The high-resolution transmission electron microscopy revealed that inter planar spacing is 0.25 nm. The results chemical mapping in scanning transmission electron microscopy so that the two elements of Oxygen and Tin are distributed very homogeneously in nanowires and exhibit no apparent elements separation. A bottom-up mechanism for SnO2 growth process has been proposed to explain the morphology of SnO2 nanowires.

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Three-dimensional microstructural characterization of GaN nonplanar substrate laterally epitaxially overgrown by metalorganic chemical vapor deposition

Journal of Crystal Growth ◽

10.1016/j.jcrysgro.2005.05.046 ◽

2005 ◽

Vol 283 (1-2) ◽

pp. 31-40 ◽

Cited By ~ 3

Author(s):

Wei Zhou ◽

Dawei Ren ◽

P.D. Dapkus

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Metalorganic Chemical Vapor Deposition ◽

Three Dimensional ◽

Chemical Vapor ◽

Microstructural Characterization ◽

Metalorganic Chemical

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Electrical and microstructural characterization of lead titanate thin films deposited by metal-organic chemical vapor deposition onto platinum and magnesium oxide

Thin Solid Films ◽

10.1016/s0040-6090(96)08771-8 ◽

1996 ◽

Vol 287 (1-2) ◽

pp. 139-145 ◽

Cited By ~ 9

Author(s):

M. Vellaikal ◽

A.I. Kingon

Keyword(s):

Thin Films ◽

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Lead Titanate ◽

Chemical Vapor ◽

Microstructural Characterization ◽

Organic Chemical ◽

Metal Organic ◽

Organic Chemical Vapor Deposition

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X-ray diffraction and raman spectroscopy characterization of isotropic pyrocarbon obtained by hot wall chemical vapor deposition

Journal of Wuhan University of Technology-Mater Sci Ed ◽

10.1007/s11595-013-0695-4 ◽

2013 ◽

Vol 28 (2) ◽

pp. 358-361 ◽

Cited By ~ 1

Author(s):

Dongsheng Zhang ◽

Kezhi Li ◽

Yan Jia ◽

Lingjun Guo ◽

Hejun Li ◽

...

Keyword(s):

Raman Spectroscopy ◽

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Chemical Vapor ◽

X Ray Diffraction ◽

X Ray ◽

Isotropic Pyrocarbon

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Synthesis by aerosol assisted chemical vapor deposition and microstructural characterization of PbTiO3 thin films

Thin Solid Films ◽

10.1016/j.tsf.2013.01.021 ◽

2013 ◽

Vol 531 ◽

pp. 179-184 ◽

Cited By ~ 5

Author(s):

J. Ramos-Cano ◽

A. Hurtado-Macías ◽

W. Antúnez-Flores ◽

L. Fuentes-Cobas ◽

J. González-Hernández ◽

...

Keyword(s):

Thin Films ◽

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Chemical Vapor ◽

Microstructural Characterization

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A study of texture in diamond films as functions of methane concentration during chemical vapor deposition and post-growth hydrogen treatment

Journal of Materials Research ◽

10.1557/jmr.1995.1764 ◽

1995 ◽

Vol 10 (7) ◽

pp. 1764-1771 ◽

Cited By ~ 4

Author(s):

D. Ganesana ◽

S.C. Sharma

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Diamond Films ◽

Chemical Vapor ◽

Hydrogen Treatment ◽

X Ray Diffraction ◽

X Ray ◽

Crystallographic Planes ◽

Hot Filament

We have studied effects of hydrogen on texture in diamond films grown by hot filament assisted chemical vapor deposition by utilizing x-ray diffraction (XRD). We present results for the relative intensities of the XRD peaks originating from the (111). (220), and (400) crystallographic planes as functions of CH4/H2 makeup during growth and post-growth H2 treatment of the films. The texture of the films can be controlled by varying composition of the CH4/H2 mixture during growth and also by subjecting films to hydrogen treatment. The complementary characterization of these films by XRD, Raman spectroscopy, and positron annihilation techniques exemplifies a correlation among film texture, diamond contcnt, and dcnsity of the microvoids in the films.

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Characterization of Silicon Carbide Grown on RB-SiC by Chemical Vapor Deposition

Key Engineering Materials ◽

10.4028/www.scientific.net/kem.434-435.499 ◽

2010 ◽

Vol 434-435 ◽

pp. 499-501 ◽

Cited By ~ 3

Author(s):

Fan Tao Meng ◽

Shan Yi Du ◽

Gui Shan Tian ◽

Yu Min Zhang

Keyword(s):

Silicon Carbide ◽

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Deposition Temperature ◽

Chemical Vapor ◽

X Ray Diffraction ◽

X Ray ◽

Sic Whiskers ◽

Deposition Conditions

Silicon carbide is one of the best materials for satellite mirror and chemical vapor deposition (CVD) is an effective method of preparing SiC whiskers and films. In this paper, SiC whiskers or films were deposited on substrates of RB-SiC in an upright chemical vapor deposition furnace of Φ150mm × 450 mm with methyltrichloride silicane (MTS) as precursor gas and H2 as carrier gas under dilute gases of different H2/Ar ratio and different deposition temperature between 1050°C and 1150°C. The morphology and composition of the CVD-SiC grown on RB-SiC substrate were determined by scanning electron microscope (SEM) and X-ray diffraction (XRD) respectively. As a result, whisker-like, worm-like or ball-like SiC can be respectively obtained dependent on different deposition conditions such as H2/Ar ratio and deposition temperature, and the composition of the productions are determined as β-SiC by XRD. Furthermore, the deposition mechanisms of different morphologies of SiC are introduced.

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