Properties of SiO2/4H-SiC Interfaces with an Oxide Deposited by a High-Temperature Process

2017 ◽  
Vol 897 ◽  
pp. 331-334 ◽  
Author(s):  
Marilena Vivona ◽  
Patrick Fiorenza ◽  
Ferdinando Iucolano ◽  
Andrea Severino ◽  
Simona Lorenti ◽  
...  
Keyword(s):  
High Temperature ◽  
Electrical Characterization ◽  
Interface State ◽  
State Density ◽  
Oxide Semiconductor ◽  
Semiconductor Interface ◽  
Mos Capacitors ◽  
High Temperature Process ◽  
Lower Temperature

This work reports on the physical and electrical characterization of the oxide/semiconductor interface in MOS capacitors with the SiO2 layer deposited by a high temperature process from dichlorosilane and nitrogen-based vapor precursors and subjected to a post deposition annealing process in N2O. Low interface state density (Dit ≈ 9.0×1011cm-2eV-1) was found at 0.2 eV from EC, which is comparable to the values typically obtained in other lower temperature deposited oxides (e.g., TEOS). A barrier height of 2.8 eV was derived from the Fowler-Nordheim plot, very close to the ideal value expected for SiO2/4H-SiC interface. Basing on these preliminary results, the integration in MOSFETs devices can be envisaged.

Processing and Characterization of MOS Capacitors Fabricated on 2°-Off Axis 4H-SiC Epilayers

2016 ◽  
Vol 858 ◽  
pp. 663-666
Author(s):  
Marilena Vivona ◽  
Patrick Fiorenza ◽  
Tomasz Sledziewski ◽  
Alexandra Gkanatsiou ◽  
Michael Krieger ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Interface State ◽  
State Density ◽  
Metal Oxide Semiconductor ◽  
Interface State Density ◽  
Device Fabrication ◽  
Oxide Semiconductor ◽  
Mos Capacitors ◽  
Oxide Breakdown

In this work, the electrical properties of SiO2/SiC interfaces onto a 2°-off axis 4H-SiC layer were studied and validated through the processing and characterization of metal-oxide-semiconductor (MOS) capacitors. The electrical analyses on the MOS capacitors gave an interface state density in the low 1×1012 eV-1cm-2 range, which results comparable to the standard 4°-off-axis 4H-SiC, currently used for device fabrication. From Fowler-Nordheim analysis and breakdown measurements, a barrier height of 2.9 eV and an oxide breakdown of 10.3 MV/cm were determined. The results demonstrate the maturity of the 2°-off axis material and pave the way for the fabrication of 4H-SiC MOSFET devices on this misorientation angle.

Electrical Properties of High-K LaLuO3 Gate Oxide for SOI MOSFETs

2011 ◽  
Vol 276 ◽  
pp. 87-93
Author(s):  
Y.Y. Gomeniuk ◽  
Y.V. Gomeniuk ◽  
A. Nazarov ◽  
P.K. Hurley ◽  
Karim Cherkaoui ◽  
...  
Keyword(s):  
Electrical Characterization ◽  
Gate Oxide ◽  
Interface State ◽  
Channel Length ◽  
State Density ◽  
Interface State Density ◽  
Mos Capacitors ◽  
Channel Mobility ◽  
Threshold Voltages

The paper presents the results of electrical characterization of MOS capacitors and SOI MOSFETs with novel high-κ LaLuO3 dielectric as a gate oxide. The energy distribution of interface state density at LaLuO3/Si interface is presented and typical maxima of 1.2×1011 eV–1cm–2 was found at about 0.25 eV from the silicon valence band. The output and transfer characteristics of the n- and p-MOSFET (channel length and width were 1 µm and 50 µm, respectively) are presented. The front channel mobility appeared to be 126 cm2V–1s–1 and 70 cm2V–1s–1 for n- and p-MOSFET, respectively. The front channel threshold voltages as well as the density of states at the back interface are presented.

Degradation of SiO2/SiC Interface Properties due to Mobile Ions Intrinsically Generated by High-Temperature Hydrogen Annealing

2014 ◽  
Vol 778-780 ◽  
pp. 541-544 ◽  
Author(s):  
Atthawut Chanthaphan ◽  
Takuji Hosoi ◽  
Yuki Nakano ◽  
Takashi Nakamura ◽  
Takayoshi Shimura ◽  
...  
Keyword(s):  
High Temperature ◽  
Electrical Characterization ◽  
Interface State ◽  
Oxide Semiconductor ◽  
Conduction Band Edge ◽  
Interface Properties ◽  
Mos Capacitors ◽  
State Densities ◽  
Mobile Ions ◽  
The Impact

The impact of mobile ions intrinsically generated in thermally grown SiO2by high-temperature forming gas annealing (FGA) on the SiO2/4H-SiC interface properties was studied by means of electrical characterization of SiC metal-oxide-semiconductor (MOS) capacitors. Unlike Si devices, mobile ions located at the interfaces were found to cause a remarkable stretch-out of capacitance-voltage (C-V) curve near the accumulation condition, and the degree of stretch-out was more pronounced with increasing probe frequency. This suggests that the interface states with a long emission time constant are formed near the conduction band edge due to the mobile ions. To clarify this unusual phenomenon, several characterization techniques to evaluate interface state densities (Dit), including Terman, conductance, and C-ψsmethods, were employed. The Ditvalues estimated for SiO2/SiC interfaces with mobile ions were a few times as large as those without mobile ions.

Effect of Interfacial Localization of Phosphorus on Electrical Properties and Reliability of 4H-SiC MOS Devices

2013 ◽  
Vol 740-742 ◽  
pp. 695-698 ◽  
Author(s):  
Tsuyoshi Akagi ◽  
Hiroshi Yano ◽  
Tomoaki Hatayama ◽  
Takashi Fuyuki
Keyword(s):  
Interface State ◽  
State Density ◽  
Oxide Semiconductor ◽  
Conduction Band Edge ◽  
Mos Capacitors ◽  
Mos Devices ◽  
Device Properties ◽  
Phosphorus Doped ◽  
Post Deposition ◽  
Mos Device

Metal-oxide-semiconductor (MOS) capacitors with phosphorus localized near the SiO2/SiC interface were fabricated on 4H-SiC by direct POCl3treatment followed by SiO2deposition. Post-deposition annealing (PDA) temperature affected MOS device properties and phosphorus distribution in the oxide. The sample with PDA at 800 °C showed narrow phosphorus-doped oxide region, resulting in low interface state density near the conduction band edge and small flatband voltage shift after FN injection. The interfacial localization of phosphorus improved both interface properties and reliability of 4H-SiC MOS devices.

scholarly journals Electrical Characterization of Si/ZnO Nanorod PN Heterojunction Diode

2020 ◽  
Vol 2020 ◽  
pp. 1-9 ◽  
Author(s):  
Sadia Muniza Faraz ◽  
Wakeel Shah ◽  
Naveed Ul Hassan Alvi ◽  
Omer Nur ◽  
Qamar Ul Wahab
Keyword(s):  
Conduction Band ◽  
Zno Nanorods ◽  
Electrical Characterization ◽  
Interface State ◽  
State Density ◽  
Average Height ◽  
Zno Nanorod ◽  
Heterojunction Diode ◽  
Rectification Factor

The electrical characterization of p-Silicon (Si) and n-Zinc oxide (ZnO) nanorod heterojunction diode has been performed. ZnO nanorods were grown on p-Silicon substrate by the aqueous chemical growth (ACG) method. The SEM image revealed high density, vertically aligned hexagonal ZnO nanorods with an average height of about 1.2 μm. Electrical characterization of n-ZnO nanorods/p-Si heterojunction diode was done by current-voltage (I-V), capacitance-voltage (C-V), and conductance-voltage (G-V) measurements at room temperature. The heterojunction exhibited good electrical characteristics with diode-like rectifying behaviour with an ideality factor of 2.7, rectification factor of 52, and barrier height of 0.7 V. Energy band (EB) structure has been studied to investigate the factors responsible for small rectification factor. In order to investigate nonidealities, series resistance and distribution of interface state density (NSS) below the conduction band (CB) were extracted with the help of I-V and C-V and G-V measurements. The series resistances were found to be 0.70, 0.73, and 0.75 KΩ, and density distribution interface states from 8.38 × 1012 to 5.83 × 1011 eV−1 cm−2 were obtained from 0.01 eV to 0.55 eV below the conduction band.

Electrical Characterization of Some Native Insulators on Germanium

1986 ◽  
Vol 76 ◽  
Author(s):  
O. J. Gregory ◽  
E. E. Crisman ◽  
Lisa Pruitt ◽  
D. J. Hymes ◽  
James J. Rosenberg
Keyword(s):  
Compositional Data ◽  
Electrical Characterization ◽  
Interface State ◽  
Chemical Oxidation ◽  
Mos Capacitors ◽  
Chemical Technique ◽  
Ir Transmission ◽  
Wet Chemical ◽  
State Densities

ABSTRACTPreliminary characterization of two native insulators on germanium is reported. A technique for preparing oxide by a room temperature chemical technique (wet chemical oxidation) is described. Compositional data based on IR transmission and ellipsometry, as well as characteristics of MOS capacitors based on this film are given. Also, compositional and electrical characterization of nitrided atmospheric pressure oxides are reported here. These films have very low fixed charge and interface state densities, and show excellent potential for use as gate insulators in a germanium MOS technology.

Systematic Investigation of Interface Properties in 4H-SiC MOS Structures Prepared by Over-Oxidation of Ion-Implanted Substrates

2010 ◽  
Vol 645-648 ◽  
pp. 495-498 ◽  
Author(s):  
Dai Okamoto ◽  
Hiroshi Yano ◽  
Tomoaki Hatayama ◽  
Takashi Fuyuki
Keyword(s):  
Interface State ◽  
Systematic Investigation ◽  
Implantation Dose ◽  
State Density ◽  
Interface State Density ◽  
Oxide Semiconductor ◽  
Conduction Band Edge ◽  
Strong Reduction ◽  
Mos Capacitors ◽  
Mos Structures

A change in the interface state density in 4H-SiC metal–oxide–semiconductor (MOS) structures by incorporation of various elements was systematically investigated. B, N, F, Al, P, and Cl ions were implanted prior to the oxidation and introduced at the SiO2/SiC interface by subsequent thermal oxidation. Interface state density near the conduction band edge for Al-, B-, F-, and Cl-implanted MOS capacitors increased with implantation dose. On the other hand, a strong reduction of the interface state density was observed for N- and P-implanted samples when the implantation dose was larger than 5.0 × 1012 cm−2. It was found that the interface state density can be reduced by P as well as N.

scholarly journals Barrier Modification by Methyl Violet Organic Dye Molecules of Ag/P-Inp Structures

2016 ◽  
Vol 2 (3) ◽  
pp. 7 ◽  
Author(s):  
Ömer Güllü
Keyword(s):  
Barrier Height ◽  
Methyl Violet ◽  
Electrical Characterization ◽  
Interface State ◽  
State Density ◽  
Mis Structure ◽  
Current Voltage ◽  
Capacitance Voltage ◽  
Mis Diode

This work includes fabrication and electrical characterization of Metal/Interlayer/Semiconductor (MIS) structures with methyl violet organic film on p-InP wafer. Metal(Ag)/ Interlayer (methyl violet =MV)/Semiconductor(p-InP) MIS structure presents a rectifying contact behavior. The values of ideality factor (n) and barrier height (BH) for the Ag/MV/p-InP MIS diode by using the current-voltage (I-V) measurement have been extracted as 1.21 and 0.84 eV, respectively. It was seen that the BH value of 0.84 eV calculated for the Ag/MV/p-InP MIS structure was significantly higher than the value of 0.64 eV of Ag/p-InP control contact. This situation was ascribed to the fact that the MV organic interlayer increased the effective barrier height by influencing the space charge region of inorganic semiconductor. The values of diffusion potential and barrier height for the Ag/MV/p-InP MIS diode by using the capacitance-voltage (C-V) measurement have been extracted as 1.21 V and 0.84 eV, respectively. The interface-state density of the Ag/MV/p-InP structure was seen to change from 2.57×1013 eV-1cm-2 to 2.19×1012 eV-1cm-2.

scholarly journals Electrical Characterization of Positively Charged SiO Coatings for MOS Solar Cells

2020 ◽  
Vol 15 (2) ◽  
pp. 1-5
Author(s):  
William Tsuyoshi Shiga ◽  
Stefanie Pereira Regis ◽  
Gabriel Oliveira Louzada ◽  
Marcos Norio Watanabe ◽  
Fábio Izumi ◽  
...  
Keyword(s):  
Solar Cells ◽  
Metal Oxide ◽  
Relative Permittivity ◽  
Electrical Characterization ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Mos Capacitors ◽  
Effective Charges ◽  
Positively Charged

This article discusses fabrication, characteriza-tion and studies of the C-V characteristics of SiO layers depos-ited by PVD on Si-p <100> substrates with doping around 1x1016 cm-3. MOS capacitors (Metal-Oxide-Semiconductor) with Al/SiO2/Si-P, Al/SiO/Si-P and Al/SiO/SiO2/Si-P structures were manufactured. It was observed the presence of negative charges in the structure with SiO/SiO2 with density of effective charges Qf ≈ -1x1012 cm-2 and relative permittivity of the die-lectric εr = 2.9. After sintering in ultrapure Ar and N2+H2(10%) the relative permittivity changed to εr = 4.52 and the layers stayed positively charged (Qf = (0.5-1.6)x1012 cm-2), which is adequate for positively charged anti-reflective (AR) coatings of MOS solar cells.

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