Expansion of Basal Plane Dislocation in 4H-SiC Epitaxial Layer on A-Plane by Electron Beam Irradiation

2018 ◽  
Vol 924 ◽  
pp. 151-154 ◽  
Author(s):  
Masaki Sudo ◽  
Yukari Ishikawa ◽  
Yong Zhao Yao ◽  
Yoshihiro Sugawara ◽  
Masashi Kato
Keyword(s):  
Electron Beam ◽  
Epitaxial Layer ◽  
Basal Plane ◽  
Electron Beam Irradiation ◽  
Expansion Velocity ◽  
Beam Irradiation ◽  
Electron Hole ◽  
Expansion Behavior ◽  
Electron Hole Pair ◽  
Basal Plane Dislocation

The expansion behavior of basal plane dislocations (BPDs) in a 4H-SiC epitaxial layer on the (110) A-plane under electron beam (EB) (//[110]) irradiation was observed. BPD expanded and formed a single Shockley stacking fault (SSSF) between a partial dislocation (PD) pair. The width of the SSSF was proportional to the EB current. The dependence of the expansion velocity on the irradiation position was observed with a fixed EB spot. It was found that the electron-hole pair migration to the PD and/or SSSF can expand the SSSF. The velocity of SSSF expansion by direct SSSF excitation with an EB was much smaller than that by the preferential excitation of a PD with migrated electron-hole pairs.

Expansion of a single Shockley stacking fault in a 4H-SiC (11 2 ¯0) epitaxial layer caused by electron beam irradiation

2018 ◽  
Vol 123 (22) ◽  
pp. 225101 ◽  
Author(s):  
Yukari Ishikawa ◽  
Masaki Sudo ◽  
Yong-Zhao Yao ◽  
Yoshihiro Sugawara ◽  
Masashi Kato
Keyword(s):  
Electron Beam ◽  
Epitaxial Layer ◽  
Electron Beam Irradiation ◽  
Stacking Fault ◽  
Beam Irradiation

Movement of basal plane dislocations in GaN during electron beam irradiation

2015 ◽  
Vol 106 (13) ◽  
pp. 132101 ◽  
Author(s):  
E. B. Yakimov ◽  
P. S. Vergeles ◽  
A. Y. Polyakov ◽  
In-Hwan Lee ◽  
S. J. Pearton
Keyword(s):  
Electron Beam ◽  
Basal Plane ◽  
Electron Beam Irradiation ◽  
Beam Irradiation

Different Dissociation Behavior of [11-20] and Non-[11-20] Basal Plane Dislocations in 4H-SiС under Electron Beam Irradiation

2012 ◽  
Vol 725 ◽  
pp. 45-48
Author(s):  
Yong Zhao Yao ◽  
Yoshihiro Sugawara ◽  
Yukari Ishikawa ◽  
Katsunori Danno ◽  
Hiroshi Suzuki ◽  
...  
Keyword(s):  
Electron Beam ◽  
Basal Plane ◽  
Electron Beam Irradiation ◽  
Minimum Energy ◽  
Dislocation Line ◽  
Induced Current ◽  
Beam Irradiation ◽  
Etch Pit ◽  
Partial Dislocations ◽  
Electron Beam Induced Current

Electron beam induced current (EBIC) and etch pit method have been used to study the dissociation behavior of basal plane dislocations (BPDs) in 4H-SiC under electron beam irradiation. When 20 kV scanning electron beam was applied for 1 h, it has been found that BPDs whose dislocation lines were along [11-20] off-cut direction dissociated into partial dislocations (PDs) forming a stacking fault (SF) between them; while no dissociation was found for BPDs extending along other directions. These results are discussed in terms of different formation energy of SFs expanding from a pure screw type and a mixed type BPD. In addition, the angle between dislocation line of a BPD and the [11-20] off-cut direction might also play a role in determining the minimum energy for SF formation.

Expansion of Stacking Faults by Electron-Beam Irradiation in 4H-SiC Diode Structure

2008 ◽  
Vol 600-603 ◽  
pp. 353-356 ◽  
Author(s):  
Ryuichi Sugie ◽  
Masanobu Yoshikawa ◽  
Shin Harada ◽  
Yasuo Namikawa
Keyword(s):  
Electron Beam ◽  
Driving Force ◽  
Electron Beam Irradiation ◽  
Stacking Faults ◽  
Geometric Shape ◽  
Nonradiative Recombination ◽  
Beam Irradiation ◽  
Nucleation Sites ◽  
Basal Plane Dislocation ◽  
Recombination Centers

The influence of electron-beam irradiation on defects in 4H-SiC diode structures was investigated by cathodoluminescence (CL) microscopy and spectroscopy. In addition to threading edge and screw dislocations, two types of stacking faults (SFs) were characterized by their emission energy, geometric shape, and the sensitivity of electron-beam irradiation. The SFs at λ = 425 nm (2.92 eV) expand from the surface of basal plane dislocation with line direction [11-20] and change their geometric shape by electron-beam irradiation. The SFs at λ = 471 nm (2.63 eV) are only slightly influenced by electron-beam irradiation. The former corresponds to the Shockley-type SFs previously observed in the degraded p-i-n diodes, and the latter to in-grown SFs with 8H structure. The panchromatic CL images constructed by the sum of monochromatic CL images suggest that there are nonradiative recombination centers in the vicinity of Shockley-type SFs. The nucleation sites and the driving force for SF expansion are discussed.

Methods to Monitor and Improve the Performance of Specimen Holders for Transmission Electron Cryomicroscopy

1996 ◽  
Vol 54 ◽  
pp. 454-455
Author(s):  
B. L. Armbruster ◽  
B. Kraus ◽  
M. Pan
Keyword(s):  
Electron Microscopy ◽  
Electron Beam ◽  
Electron Beam Irradiation ◽  
Beam Irradiation ◽  
Quality Of Data ◽  
Electron Cryomicroscopy ◽  
Thermal Equilibration ◽  
Transmission Electron ◽  
Electron Microscopes

One goal in electron microscopy of biological specimens is to improve the quality of data to equal the resolution capabilities of modem transmission electron microscopes. Radiation damage and beam- induced movement caused by charging of the sample, low image contrast at high resolution, and sensitivity to external vibration and drift in side entry specimen holders limit the effective resolution one can achieve. Several methods have been developed to address these limitations: cryomethods are widely employed to preserve and stabilize specimens against some of the adverse effects of the vacuum and electron beam irradiation, spot-scan imaging reduces charging and associated beam-induced movement, and energy-filtered imaging removes the “fog” caused by inelastic scattering of electrons which is particularly pronounced in thick specimens.Although most cryoholders can easily achieve a 3.4Å resolution specification, information perpendicular to the goniometer axis may be degraded due to vibration. Absolute drift after mechanical and thermal equilibration as well as drift after movement of a holder may cause loss of resolution in any direction.

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