Optimization of the SiC Powder Source Size Distribution for the Sublimation Growth of Long Crystals Boules

2019 ◽  
Vol 963 ◽  
pp. 42-45
Author(s):  
Johannes Steiner ◽  
Matthias Arzig ◽  
Ta Ching Hsiao ◽  
Peter J. Wellmann
Keyword(s):  
Size Distribution ◽  
Shape Change ◽  
Growth Conditions ◽  
Powder Size ◽  
Growth Interface ◽  
Morphology Change ◽  
Powder Density ◽  
Stable Growth ◽  
Sublimation Growth

The influence of four different SiC source powder size distributions on the sublimation behavior during physical vapor transport growth of SiC was studied. The growth processes were carried out in a 3 inch crystal growth setup and observed in situ using advanced 3D computed tomography X-ray visualization. The single modal D90 size distribution of two source powders was 50 μm and 200 μm, respectively, with a corresponding average powder density of 1.17 g/cm3. The third source powder consisted of a blend of the previously named powders and exhibited an average powder density of 1.66 g/cm3 with a bimodal particle size distribution. The last source was composed of a solid polycrystalline SiC cylinder. The bimodal powder source exhibited a smoother morphology change and material consumption during the growth run and led to a much more stable shape change of the growth interface compared to the single modal source powders. The solid source featured the least morphology change. Therefore, with a careful adaption of the source material stable growth conditions can be achieved.

scholarly journals Optimization of the SiC Powder Source Material for Improved Process Conditions During PVT Growth of SiC Boules

Materials ◽  
2019 ◽  
Vol 12 (19) ◽  
pp. 3272
Author(s):  
Ellefsen ◽  
Arzig ◽  
Steiner ◽  
Wellmann ◽  
Runde
Keyword(s):  
Crystal Growth ◽  
Size Distribution ◽  
Growth Conditions ◽  
Source Material ◽  
Process Time ◽  
Process Conditions ◽  
Powder Size ◽  
Growth Interface ◽  
X Ray

We have studied the influence of different SiC powder size distributions and the sublimation behavior during physical vapor transport growth of SiC in a 75 mm and 100 mm crystal processing configuration. The evolution of the source material as well as of the crystal growth interface was carried out using in situ 3D X-ray computed tomography (75 mm crystals) and in situ 2D X-ray visualization (100 mm crystals). Beside the SiC powder size distribution, the source materials differed in the maximum packaging density and thermal properties. In this latter case of the highest packaging density, the in situ X-ray studies revealed an improved growth interface stability that enabled a much longer crystal growth process. During process time, the sublimation-recrystallization behavior showed a much smoother morphology change and slower materials consumption, as well as a much more stable shape of the growth interface than in the cases of the less dense SiC source. By adapting the size distribution of the SiC source material we achieved to significantly enhance stable growth conditions.

Application of In Situ 3D Computed Tomography during PVT Growth of 4H-SiC for the Study of Source Material Consumption under Varying Growth Conditions

2016 ◽  
Vol 858 ◽  
pp. 49-52 ◽  
Author(s):  
P.J. Wellmann ◽  
Lars Fahlbusch ◽  
Michael Salamon ◽  
Norman Uhlmann
Keyword(s):  
Growth Parameters ◽  
Growth Conditions ◽  
Source Material ◽  
Gas Pressure ◽  
Inert Gas ◽  
Material Surface ◽  
Growth Interface ◽  
Axial Temperature ◽  
The Stability

2D and 3D in-situ X-ray visualization was applied to study the behavior of the SiC source material during PVT growth under various growth conditions. Experiments were carried out in two growth chambers for the growth of 3 inch and 4 inch crystals. Growth parameters were varied in the gas room in terms of axial temperature and inert gas pressure. The study addresses the stability of the SiC source material surface. It is shown that a higher inert gas pressure (e.g. 25 mbar) inhibits an unintentional upward evolution of the SiC feedstock that interferes with the crystal growth interface. The latter is related to a suppression of a pronounced recrystallization inside the SiC source. For a low inert gas pressure (e.g. 10 mbar) it is concluded that the axial temperature gradient inside the source material needs to be decreased to less than ca. 10 K/cm.

Prospects of Bulk Growth of 3C-SiC Using Sublimation Growth

2020 ◽  
Vol 1004 ◽  
pp. 113-119
Author(s):  
Peter J. Wellmann ◽  
Philipp Schuh ◽  
Manuel Kollmuss ◽  
Michael Schöler ◽  
Johannes Steiner ◽  
...  
Keyword(s):  
Bulk Material ◽  
Growth Conditions ◽  
Free Standing ◽  
Growth Interface ◽  
Seed Transfer ◽  
Bulk Growth ◽  
Axial Temperature ◽  
High Supersaturation ◽  
Proper Design ◽  
Stable Growth

Free standing 3C-SiC wafers with a dimeter of 50 mm and a thickness of ca. 0.8 mm have been grown on a regular base using 3C-SiC CVD seed transfer from Si wafers to a poly-SiC-carrier and a sublimation epitaxy configuration. Up to the thickness of almost 1 mm, stable growth conditions of the cubic polytype have been achieved. The high supersaturation was kept stable by the proper design of the hot zone that enables a high axial temperature gradient at the growth interface. The Sirich gas phase was realized by the application of a Tantalum getter that was integrated into the graphitebased growth cell. Furthermore, an adaption of the growth setup allowed the growth of 3C material with a diameter of 95 mm and bulk material up to 3 mm on 25 mm diameter. Computer simulations were used to determine the supersaturation of the growth setup for different source-to-seed distances. The minimum supersaturation necessary for stable growth of cubic SiC was found to be higher 0.1 for seed already containing the required 3C polytype.

Growth Conditions and In Situ Computed Tomography Analysis of Facetted Bulk Growth of SiC Boules

2018 ◽  
Vol 924 ◽  
pp. 245-248
Author(s):  
Matthias Arzig ◽  
Michael Salamon ◽  
Norman Uhlmann ◽  
Bertil A. Johansen ◽  
Peter J. Wellmann
Keyword(s):  
Computed Tomography ◽  
Packing Density ◽  
Thermal Gradient ◽  
Growth Conditions ◽  
Source Material ◽  
Lateral Growth ◽  
Growth Interface ◽  
Bulk Growth ◽  
Tomography Analysis

Two 3inch SiC boules were grown in a PVT setup using source material of different packing density. During the growth, in-situ computed tomography of the growing boules showed differences in the development of the growth interface. A slightly bent growth interface was found for the smaller packing density. For the higher packing density the resulting crystal exhibits the onset of 6 pyramidal facets on its flanks. Besides that, strong anisotropic lateral growth was found on its (000-1) facet. Numerical simulations show an impact of the powder on the thermal gradient in the growth cell and therefore on the supersaturation. It is discussed that a higher supersaturation can account for the anisotropy in the growth rate of the [1-100] and the [11-20] direction.

New Gas Atomizing Technique for Nb3Al Intermetallic Alloy

1994 ◽  
Vol 364 ◽  
Author(s):  
Noriaki Murahashi ◽  
Hiroaki Kohmoto ◽  
Tohru Kohno
Keyword(s):  
Size Distribution ◽  
Supersaturated Solid Solution ◽  
Measurement Data ◽  
In Situ Measurement ◽  
Powder Size ◽  
Intermetallic Alloys ◽  
Structural Applications ◽  
Powder Size Distribution ◽  
Rapidly Solidified

AbstractPlasma-Melt-Gas-Atomizing (PMGA) technique has been developed to produce rapidly solidified powders of intermetallic alloys for ultra-high temperature structural applications. Using this technique, rapidly solidified Nb3Al powders have been produced. These powders consist mainly of supersaturated solid solution of Al in Nb (A2), while the conventional cast structure consists of ordered A 15, and may be a good source for most powder metallurgical applications. Furthermore, a unique technique to control the powder size distribution is currently under development. In-situ measurement method of the atomized powder size distribution has been examined by using phase Doppler particle analyzer to control final powder size distribution by the feedback from the in-situ measurement data to the control system of the Plasma-Melt-Gas-Atomizer.

Growth of Epitaxial IrSi3 Layers on Si(111)

1989 ◽  
Vol 160 ◽  
Author(s):  
T. L. Lin ◽  
C. W. Nieh
Keyword(s):  
Surface Morphology ◽  
Molecular Beam ◽  
Solid Phase ◽  
Single Mode ◽  
Growth Conditions ◽  
Tem Analysis ◽  
Mbe Growth ◽  
Good Surface ◽  
Transmission Electron

AbstractEpitaxial IrSi3 films have been grown on Si (111) by molecular beam epitaxy (MBE) at temperatures ranging from 630 to 800 °C and by solid phase epitaxy (SPE) at 500 °C. Good surface morphology was observed for IrSi3 layers grown by MBE at temperatures below 680 °C, and an increasing tendency to form islands is noted in samples grown at higher temperatures. Transmission electron microscopy (TEM) analysis reveals that the IrSi3 layers grow epitaxially on Si(111) with three epitaxial modes depending on the growth conditions. For IrSi3 layers grown by MBE at 630 °C, two epitaxial modes were observed with ~ 50% area coverage for each mode. Single mode epitaxial growth was achieved at a higher MBE growth temperature, but with island formation in the IrSi3 layer. A template technique was used with MBE to improve the IrSi3 surface morphology at higher growth temperatures. Furthermore, single-crystal IrSi3 was grown on Si(111) at 500 °C by SPE, with annealing performed in-situ in a TEM chamber.

scholarly journals Evaluating model parameterizations of submicron aerosol scattering and absorption with in situ data from ARCTAS 2008

2016 ◽  
Vol 16 (14) ◽  
pp. 9435-9455 ◽  
Author(s):  
Matthew J. Alvarado ◽  
Chantelle R. Lonsdale ◽  
Helen L. Macintyre ◽  
Huisheng Bian ◽  
Mian Chin ◽  
...  
Keyword(s):  
Optical Properties ◽  
Size Distribution ◽  
Aerosol Size Distribution ◽  
Visible Radiation ◽  
Submicron Aerosol ◽  
In Situ Data ◽  
Aerosol Absorption ◽  
Aerosol Scattering ◽  
The Impact

Abstract. Accurate modeling of the scattering and absorption of ultraviolet and visible radiation by aerosols is essential for accurate simulations of atmospheric chemistry and climate. Closure studies using in situ measurements of aerosol scattering and absorption can be used to evaluate and improve models of aerosol optical properties without interference from model errors in aerosol emissions, transport, chemistry, or deposition rates. Here we evaluate the ability of four externally mixed, fixed size distribution parameterizations used in global models to simulate submicron aerosol scattering and absorption at three wavelengths using in situ data gathered during the 2008 Arctic Research of the Composition of the Troposphere from Aircraft and Satellites (ARCTAS) campaign. The four models are the NASA Global Modeling Initiative (GMI) Combo model, GEOS-Chem v9-02, the baseline configuration of a version of GEOS-Chem with online radiative transfer calculations (called GC-RT), and the Optical Properties of Aerosol and Clouds (OPAC v3.1) package. We also use the ARCTAS data to perform the first evaluation of the ability of the Aerosol Simulation Program (ASP v2.1) to simulate submicron aerosol scattering and absorption when in situ data on the aerosol size distribution are used, and examine the impact of different mixing rules for black carbon (BC) on the results. We find that the GMI model tends to overestimate submicron scattering and absorption at shorter wavelengths by 10–23 %, and that GMI has smaller absolute mean biases for submicron absorption than OPAC v3.1, GEOS-Chem v9-02, or GC-RT. However, the changes to the density and refractive index of BC in GC-RT improve the simulation of submicron aerosol absorption at all wavelengths relative to GEOS-Chem v9-02. Adding a variable size distribution, as in ASP v2.1, improves model performance for scattering but not for absorption, likely due to the assumption in ASP v2.1 that BC is present at a constant mass fraction throughout the aerosol size distribution. Using a core-shell mixing rule in ASP overestimates aerosol absorption, especially for the fresh biomass burning aerosol measured in ARCTAS-B, suggesting the need for modeling the time-varying mixing states of aerosols in future versions of ASP.

Sign in / Sign up

Export Citation Format

Share Document