Enhancement of ODMR Contrasts of Silicon Vacancy in SiC by Thermal Treatment

2020 ◽  
Vol 1004 ◽  
pp. 337-342
Author(s):  
Yoji Chiba ◽  
Yuichi Yamazaki ◽  
Shin Ichiro Sato ◽  
Takahiro Makino ◽  
Naoto Yamada ◽  
...  

We demonstrated the enhancement of the optically detected magnetic resonance (ODMR) contrast of negatively charged silicon vacancy (VSi-) in SiC by thermal treatment. To create high density VSi-, Proton Beam Writing (PBW) was conducted. After an annealing at 600 °C, ODMR contrast showed the highest value in the investigated temperature range. At a fewer irradiation fluence, despite no significant change was observed in terms of VSi- PL intensity, the improvement of the ODMR contrast was observed. Considering defect energy levels and annealing behavior previously reported, it was deduced that the improvement of the ODMR contrast was caused by the reduction of other irradiation induced defect centers, such as EH1/EH3 centers.

2019 ◽  
Vol 963 ◽  
pp. 709-713
Author(s):  
Yoji Chiba ◽  
Yuichi Yamazaki ◽  
Takahiro Makino ◽  
Shinichiro Sato ◽  
Naoto Yamada ◽  
...  

We demonstrated that silicon vacancy (VSi) can be created in SiC pn junction diode by proton beam writing (PBW) without degradation of the diode performance. The VSi showed the same specific emission for both optically and electrically excitation, which suggests that electrically controllable VSi was created. In addition, optically detected magnetic resonance (ODMR) signal was successfully detected from optically excited VSi at room temperature. This result suggests that VSi introduced into the device by PBW still maintain spin manipulating capability, which is an important step toward realizing SiC devices internally equipped with a VSi-based quantum sensor.


2018 ◽  
Vol 924 ◽  
pp. 469-472 ◽  
Author(s):  
Mark A. Anders ◽  
Patrick M. Lenahan ◽  
Aivars J. Lelis

In this work, we study the effects of NO anneals on the interface of 4H-SiC MOSFETs via spin dependent charge pumping, an electrically detected magnetic resonance technique. We make measurements at high and ultra-low resonance frequencies. Our results indicate that the NO anneals both change the silicon vacancy energy levels as well as induces disorder at the interface. In addition, our results indicate that the changes in energy levels involve N atoms very close to VSi sites.


2016 ◽  
Vol 28 (27) ◽  
pp. 275302 ◽  
Author(s):  
Y Matsuzaki ◽  
H Morishita ◽  
T Shimooka ◽  
T Tashima ◽  
K Kakuyanagi ◽  
...  

1992 ◽  
Vol 242 ◽  
Author(s):  
B.K. Meyer ◽  
D.M. Hofmann ◽  
J. Eckstein ◽  
K.W. Benz

ABSTRACTThe optical properties of the red modification of mercuric iodide (HgJ2) were studied by optical absorption, magnetic circular dichroism, photoluminescence and optically detected magnetic resonance investigations. The experiments demonstrate the involvment of acceptors with energy levels at Ev + 0.14 ± 0.01 eV and 0.15 ± 0.01 eV in the absorption and recombination at 2.2 eV. The g - values are 0.85 and 0.74, respectively.


2020 ◽  
Vol 125 (23) ◽  
Author(s):  
Zi-Huai Zhang ◽  
Paul Stevenson ◽  
Gergő Thiering ◽  
Brendon C. Rose ◽  
Ding Huang ◽  
...  

1998 ◽  
Vol 536 ◽  
Author(s):  
H. Porteanu ◽  
A. Glozman ◽  
E. Lifshitz ◽  
A. Eychmüller ◽  
H. Weller

AbstractCdS/HgS/CdS nanoparticles consist of a CdS core, epitaxially covered by one or two monolayers of HgS and additional cladding layers of CdS. The present paper describes our efforts to identify the influence of CdS/HgS/CdS interfaces on the localization of the photogenerated carriers deduced from the magneto-optical properties of the materials. These were investigated by the utilization of optically detected magnetic resonance (ODMR) and double-beam photoluminescence spectroscopy. A photoluminescence (PL) spectrum of the studied material, consists of a dominant exciton located at the HgS layer, and additional non-excitonic band, presumably corresponding to the recombination of trapped carriers at the interface. The latter band can be attenuated using an additional red excitation. The ODMR measurements show the existence of two kinds of electron-hole recombination. These electron-hole pairs maybe trapped either at a twin packing of a CdS/HgS interface, or at an edge dislocation of an epitaxial HgS or a CdS cladding layer.


Author(s):  
M. M. Glazov

This chapter is devoted to one of key phenomena in the field of spin physics, namely, resonant absorption of electromagnetic waves under conditions where the Zeeman splitting of spin levels in magnetic field is equal to photon energy. This method is particularly important for identification of nuclear spin effects, because resonance spectra provide fingerprints of different involved spin species and make it possible to distinguish different nuclear isotopes. As discussed in this chapter the nuclear magnetic resonance provides also an access to local magnetic fields acting on nuclear spins. These fields are caused by the magnetic interactions between the nuclei and by the quadrupole splittings of nuclear spin states in anisotropic crystalline environment. Manifestations of spin resonance in optical responses of semiconductors–that is, optically detected magnetic resonance–are discussed.


Chemosensors ◽  
2020 ◽  
Vol 8 (3) ◽  
pp. 68
Author(s):  
Takahiro Fujisaku ◽  
Ryuji Igarashi ◽  
Masahiro Shirakawa

The dynamics of physical parameters in cells is strongly related to life phenomena; thus, a method to monitor and visualize them on a single-organelle scale would be useful to reveal unknown biological processes. We demonstrate real-time nanometre-scale T1-weighted imaging using a fluorescent nanodiamond. We explored optically detected magnetic resonance (ODMR) contrast at various values of interval laser pulse (τ), showing that sufficient contrast is obtained by appropriate selection of τ. By this method, we visualized nanometre-scale pH changes using a functionalized nanodiamond whose T1 has a dependence on pH conditions.


Sign in / Sign up

Export Citation Format

Share Document