Synergistic Effects of Interstitial-Impurity-Atoms and Radiation-Induced Defects on Deformation and Fracture Characteristics of Ferritic Steels

We have recently shown that Sn impurity atoms are effective traps for vacancies (V) in Ge:Sn crystals irradiated with MeV electrons at room temperature [V.P. Markevich et al., J. Appl. Phys. 109 (2011) 083705]. A hole trap with 0.19 eV activation energy for hole emission to the valence band (Eh) has been assigned to an acceptor level of the Sn-V complex. In the present work electrically active defects introduced into Ge:Sn+P crystals by irradiation with 6 MeV electrons and subsequent isochronal annealing in the temperature range 50-300 °C have been studied by means of transient capacitance techniques and ab-initio density functional modeling. It is found that the Sn-V complex anneals out upon heat-treatments in the temperature range 50-100 °C. Its disappearance is accompanied by the formation of vacancy-phosphorus (VP) centers. The disappearance of the VP defect upon thermal annealing in irradiated Sn-doped Ge crystals is accompanied by the effective formation of a defect which gives rise to a hole trap with Eh= 0.21 eV and is more thermally stable than other secondary radiation-induced defects in Ge:P samples. This defect is identified as tin-vacancy-phosphorus (SnVP) complex. It is suggested that the effective interaction of the VP centers with tin atoms and high thermal stability of the SnVP complex can result in suppression of transient enhanced diffusion of phosphorus atoms in Ge.

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The Evaluation of Deformation and Fracture of Gilsocarbon Graphite Subject to Service Environments: Experimental and Modelling

Key Engineering Materials ◽

10.4028/www.scientific.net/kem.754.91 ◽

2017 ◽

Vol 754 ◽

pp. 91-94 ◽

Cited By ~ 2

Author(s):

B. Šavija ◽

G.E. Smith ◽

P.J. Heard ◽

E. Sarakinou ◽

J.E. Darnbrough ◽

...

Keyword(s):

Mechanical Properties ◽

Reactor Core ◽

Fracture Characteristics ◽

Service Environment ◽

Deformation And Fracture ◽

Wide Range ◽

Radiolytic Oxidation ◽

Service Environments ◽

Induced Defects ◽

Irradiation Induced Defects

Commercial graphites are used for a wide range of applications. For example, Gilsocarbon graphite is used within the reactor core of Advanced Gas Cooled Reactors (UK) as a moderator. In service, the mechanical properties of the graphite are changed as a result of neutron irradiation induced defects and porosity arising from radiolytic oxidation. In this paper, we discuss measurements undertaken of mechanical properties at the micro-length-scale for virgin and irradiated material. These data provide the necessary inputs to an experimentally-informed model that predicts the deformation and fracture properties of Gilsocarbon graphite at the centimetrelength-scale. The results provide an improved understanding of how the mechanical properties and fracture characteristics of this type of graphite change as a result of exposure to the service environment.

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Xenon ion irradiation of superconducting YBa2Cu3O7 thin films

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100173595 ◽

1990 ◽

Vol 48 (4) ◽

pp. 92-93

Author(s):

H. Watanabe ◽

B. Kabius ◽

B. Roas ◽

K. Urban

Keyword(s):

Defect Formation ◽

Ion Irradiation ◽

High Resolution Electron Microscopy ◽

Structural Disorder ◽

Flux Lines ◽

Pinning Effect ◽

Magnetic Flux Lines ◽

Resolution Electron ◽

Radiation Induced ◽

Induced Defects

Recently it was reported that the critical current density(Jc) of YBa2Cu2O7, in the presence of magnetic field, is enhanced by ion irradiation. The enhancement is thought to be due to the pinning of the magnetic flux lines by radiation-induced defects or by structural disorder. The aim of the present study was to understand the fundamental mechanisms of the defect formation in association with the pinning effect in YBa2Cu3O7 by means of high-resolution electron microscopy(HRTEM).The YBa2Cu3O7 specimens were prepared by laser ablation in an insitu process. During deposition, a substrate temperature and oxygen atmosphere were kept at about 1073 K and 0.4 mbar, respectively. In this way high quality epitaxially films can be obtained with the caxis parallel to the <100 > SrTiO3 substrate normal. The specimens were irradiated at a temperature of 77 K with 173 MeV Xe ions up to a dose of 3.0 × 1016 m−2.

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