Synthesis of Pb1-xYbx(Zr0.52Ti0.48)O3 Nanopowders by a Modified Sol-Gel Process Using Zirconium Oxynitrate Source

Ferroelectric lead zirconate titanate(PZT)thin films have attracted great attention because of their potential applications in memory devices[1] due to their unique properties, for example, hysteresis loop and high dielectric constant. To realize these memory devices, it is necessary to overcome the reliability problems such as fatigue, retention and imprint. It is well known that lead base perovskite family ferroelectric thin films with donor dopant such as La3+ and Nb5+ have improved the electrical properties of PZT thin films effectively [2-3]. And it is proposed that the cation substitution could reduce the number of defects such as oxygen vacancies, which could promote electrical fatigue and leakage current of PZT ferroelectric thin films obviously. In the present study, rare earth Yb-doped lead zirconium titanate (PYZT) nanocrystalline powders with a composition near the morphotropic phase boundary (Zr/Ti=52/48) were prepared by a modified sol-gel method. DTA/TG and XRD were used to determine the thermal and phase changes in the formation of PYZT crystalline powders. The effect of Yb3+ cation substitution for Pb2+ cation on the microstructure of PZT was developed with XRD. The grain size of PYZT nanopowders is about 40 nm determined by TEM.

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Local Fatigue Evaluation in PZT Thin Films with Nanoparticles by Piezoresponse Force Microscopy

Smart Materials Research ◽

10.1155/2012/391026 ◽

2012 ◽

Vol 2012 ◽

pp. 1-9

Author(s):

B. S. Li

Keyword(s):

Thin Films ◽

Lead Zirconate Titanate ◽

Ferroelectric Properties ◽

Sol Gel ◽

Precursor Solution ◽

Grain Morphology ◽

Piezoresponse Force Microscopy ◽

Lead Zirconate ◽

Fatigue Performance ◽

Pzt Thin Films

Lead zirconate titanate (PZT) thin films with the morphotropic phase boundary composition (Zr/Ti = 52/48) have been prepared using a modified diol-based sol-gel route by introducing 1–5 mol% barium titanate (BT) nanoseeds into the precursor solution on platinized silicon substrates (Pt/Ti/SiO2/Si). Macroscopic electric properties of PZT film with nanoparticle showed a significant improvement of ferroelectric properties. This work aims at the systematic study of the local switching polarization behavior during fatigue in PZT films with and without nanoparticles by using very recent developed scanning piezoelectric microscopy (SPM). We show that the local fatigue performance, which is characterized by variations of local piezoloop with electric cycles, is significantly improved by adding some nanoseeds. It has been verified by scanning electron microscope (SEM) that the film grain morphology changes from columnar to granular structure with the addition of the nanoseeds. On the other hand, the existence of PtxPb transition phase, which existed in interface at early crystallization stage of pure PZT thin film, deteriorates the property of the interface. These microstructures and the interfaces of these films significantly affect the electrons injection occurred on the interfaces. The domain wall pinning induced by injected electrons and the succeeding penetration into the films is discussed to explain the fatigue performance.

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EFFECT OF PRE-HEATING TEMPERATURE ON THE CHARACTERISTICS OF PZT THIN FILMS GROWN BY USING A TRIOL SOL–GEL ROUTE

Surface Review and Letters ◽

10.1142/s0218625x0700930x ◽

2007 ◽

Vol 14 (02) ◽

pp. 229-234

Author(s):

SARAWUT THOUNTOM ◽

MANOCH NAKSATA ◽

KENNETH MACKENZIE ◽

TAWEE TUNKASIRI

Keyword(s):

Thin Films ◽

Lead Zirconate Titanate ◽

Heating Temperature ◽

Ferroelectric Properties ◽

Sol Gel ◽

Hysteresis Loops ◽

Lead Zirconate ◽

Pzt Thin Films ◽

Pzt Films ◽

Ferroelectric Hysteresis

Lead zirconate titanate (PZT) films with compositions near the morphotropic phase boundary were fabricated on Pt (111)/ Ti / SiO 2/ Si (100) using the triol sol–gel method. The effect of the pre-heating temperature on the phase transformations, microstructures, electrical properties, and ferroelectric properties of the PZT thin films was investigated. Randomly oriented PZT thin films pre-heated at 400°C for 10 min and annealed at 600°C for 30 min showed well-defined ferroelectric hysteresis loops with a remnant polarization of 26.57 μC/cm2 and a coercive field of 115.42 kV/cm. The dielectric constant and dielectric loss of the PZT films were 621 and 0.0395, respectively. The microstructures of the thin films are dense, crack-free, and homogeneous with fine grains about 15–20 nm in size.

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Electrical Properties of Amorphous Thin Films of Ferroelectric Oxides Prepared by Sol-Gel Technique

MRS Proceedings ◽

10.1557/proc-310-441 ◽

1993 ◽

Vol 310 ◽

Cited By ~ 1

Author(s):

Yuhuan Xu ◽

Ren Xu ◽

Chih-Hsing Cheng ◽

John D. Mackenzie

Keyword(s):

Thin Films ◽

Electrical Properties ◽

Lead Zirconate Titanate ◽

Sol Gel ◽

Lead Zirconate ◽

Ferroelectric Thin Films ◽

Amorphous Thin Films ◽

Crystalline Films ◽

Gel Technique ◽

Ferroelectric Oxides

AbstractAmorphous thin films of ferroelectric oxides including lead zirconate titanate (PZT), barium titanate (BaTiO3) and lithium niobate (LiNbO3) on several kinds of substrates were prepared by a sol-gel technique. The heat-treatment temperatures for preparation of amorphous thin films were much lower than those for the corresponding crystalline ferroelectric thin films. Electrical properties of these amorphous thin films were measured and compared with those of corresponding crystalline films. These amorphous thin films exhibited ferroelectric-like behavior. A model of the microstructure of these films is proposed.

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Properties of sol-gel-derived lead zirconate titanate (PZT) thin films on platinum-coated silicon substrates

ISAF '96. Proceedings of the Tenth IEEE International Symposium on Applications of Ferroelectrics ◽

10.1109/isaf.1996.602801 ◽

2002 ◽

Author(s):

Fei Xu ◽

S. Trolier-McKinstry

Keyword(s):

Thin Films ◽

Lead Zirconate Titanate ◽

Sol Gel ◽

Lead Zirconate ◽

Silicon Substrates ◽

Pzt Thin Films ◽

Zirconate Titanate

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Development of sol-gel derived lead zirconate titanate (PZT) thin films with a nonporous Pt/Ti bottom electrode

10.1117/12.881460 ◽

2011 ◽

Author(s):

Qing Guo ◽

G. Z. Cao ◽

I. Y. Shen

Keyword(s):

Thin Films ◽

Lead Zirconate Titanate ◽

Bottom Electrode ◽

Sol Gel ◽

Lead Zirconate ◽

Pzt Thin Films ◽

Zirconate Titanate

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The Role of Processing Parameters in Variation of Microstruture of Sol-Gel Derived Lead Zirconate Titanate Thin Films

MRS Proceedings ◽

10.1557/proc-541-399 ◽

1998 ◽

Vol 541 ◽

Cited By ~ 1

Author(s):

Chang Jung Kim ◽

Tae-Young Kim ◽

Ilsub Chung ◽

In Kyung Yoo

Keyword(s):

Thin Films ◽

Lead Zirconate Titanate ◽

Ferroelectric Properties ◽

Sol Gel ◽

Secondary Phase ◽

Processing Parameters ◽

Lead Zirconate ◽

Test System ◽

Pzt Thin Films ◽

Force Microscopy

AbstractThe PZT thin films were fabricated to investigate the effect of sol-gel processing parameters on the physical and the electrical properties. The films were made with different amount of excess Pb precursors and drying temperatures, and then annealed in various ambients. The physical properties of the films such as crystallinity and microstructure were evaluated using x-ray diffraction, scanning electron microscopy and atomic force microscopy. The ferroelectric properties and current density characteristics of the films were investigated using a standarized feiroelectric test system and pA meter, respectively. It is found that the drying temperature was playing a key role in the formation of the secondary phase on the PZT thin films. In addition, it turned out that the use of nitrogen as an annealing ambient promoted overall ferroelectric properties, when compared to oxygen ambients.

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Reactive ion etching of sol-gel deposited lead zirconate titanate (pzt) thin films in sf6 plasmas

Integrated Ferroelectrics ◽

10.1080/10584580108015666 ◽

2001 ◽

Vol 37 (1-4) ◽

pp. 67-74 ◽

Cited By ~ 1

Author(s):

George McLane ◽

Ronald Polcawich ◽

Jeffrey Pulskamp ◽

Brett Piekarski ◽

Madan Dubey ◽

...

Keyword(s):

Thin Films ◽

Lead Zirconate Titanate ◽

Sol Gel ◽

Reactive Ion Etching ◽

Lead Zirconate ◽

Ion Etching ◽

Pzt Thin Films ◽

Zirconate Titanate

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Properties of Pzt Thin Films with 2CdO·B2O3 Glass Phase Additive

MRS Proceedings ◽

10.1557/proc-243-263 ◽

1991 ◽

Vol 243 ◽

Author(s):

Keith G. Brooks ◽

Jiayu Chen ◽

K. R. Udayakumar ◽

L. Eric Cross

Keyword(s):

Thin Films ◽

Lead Zirconate Titanate ◽

Spin Coating ◽

Glass Phase ◽

Sol Gel ◽

Lead Zirconate ◽

Coating Process ◽

Pzt Thin Films ◽

Gel Processing ◽

Hysteresis Properties

AbstractLead zirconate titanate thin films containing 0-4 wt.% of 2CdO·B2O3 glass phase additive have been fabricated by sol-gel processing. Smooth dense perovskite films of approximately 3500Å thickness were formed on Si wafers by a multiple layer spin coating process followed by rapid thermal annealing. Remanent polarizations of up to 23μC/cm2 were measured. Hysteresis properties were found to be very sensitive to annealing time at 700°C, with remanence being maximized at 100-200 seconds.

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Sol-Gel Process and Properties of Textured Pb(Zr, Ti)O3 Films on Silicon Wafers

Key Engineering Materials ◽

10.4028/www.scientific.net/kem.280-283.239 ◽

2007 ◽

Vol 280-283 ◽

pp. 239-242 ◽

Cited By ~ 1

Author(s):

Wen Gong ◽

Xiang Cheng Chu ◽

Jing Feng Li ◽

Zhi Lun Gui ◽

Long Tu Li

Keyword(s):

Thin Films ◽

Lead Zirconate Titanate ◽

Sol Gel ◽

Lead Zirconate ◽

Silicon Wafers ◽

Seeding Layer ◽

Pzt Thin Films ◽

Pzt Film ◽

Sol Gel Process ◽

Pzt Films

Lead zirconate titanate (PZT) thin films with a composition near the morphotropic phase boundary were deposited on silicon wafers by using a modified sol-gel method. Introducing a seeding layer between the interface of PZT film and platinum electrode controlled the texture of PZT films. The lead oxide seeding layer results in highly (001)-textured PZT film, while the titanium dioxide seeding layer results in (111)-textured one. SEM and XRD were used to characterize the PZT thin films. The ferroelectric and piezoelectric properties of the PZT films were evaluated and discussed in association with different preferential orientations.

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Microstructure Characterization of Ferroelectric Thin Films used in Non-Volatile Memories - Optical and Scanning Electron Microscopy

MRS Proceedings ◽

10.1557/proc-200-153 ◽

1990 ◽

Vol 200 ◽

Cited By ~ 34

Author(s):

Leo N. Chapin ◽

Sharon A. Myers

Keyword(s):

Electron Microscopy ◽

Thin Films ◽

Scanning Electron Microscopy ◽

Lead Zirconate Titanate ◽

Sol Gel ◽

Lead Zirconate ◽

Ferroelectric Thin Films ◽

Fully Integrated ◽

Ferroelectric Layer ◽

Scanning Electron

ABSTRACTLead zirconate titanate ferroelectric thin films have been fabricated and fully integrated with standard CMOS semiconductor technology to produce non-volatile IC memory devices, now being tested in the marketplace. Starting with an organo-metallic sol-gel and using standard IC spin-on glass and annealing technologies, perovskite type ferroelectric thin films are formed. A variety of techniques have been under study for characterizing the crystalline microstructumre of the ferroelectric layer. Presented here are observations made with optical and scanning electron microscopy, and X-ray diffraction analysis of the effects of ferroelectric composition and sinter temperatures on crystal structure.

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