Microstructure Characterization of Ferroelectric Thin Films used in Non-Volatile Memories - Optical and Scanning Electron Microscopy

1990 ◽  
Vol 200 ◽  
Author(s):  
Leo N. Chapin ◽  
Sharon A. Myers
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Scanning Electron Microscopy ◽  
Lead Zirconate Titanate ◽  
Sol Gel ◽  
Lead Zirconate ◽  
Ferroelectric Thin Films ◽  
Fully Integrated ◽  
Ferroelectric Layer ◽  
Scanning Electron

ABSTRACTLead zirconate titanate ferroelectric thin films have been fabricated and fully integrated with standard CMOS semiconductor technology to produce non-volatile IC memory devices, now being tested in the marketplace. Starting with an organo-metallic sol-gel and using standard IC spin-on glass and annealing technologies, perovskite type ferroelectric thin films are formed. A variety of techniques have been under study for characterizing the crystalline microstructumre of the ferroelectric layer. Presented here are observations made with optical and scanning electron microscopy, and X-ray diffraction analysis of the effects of ferroelectric composition and sinter temperatures on crystal structure.

scholarly journals Hydrothermal synthesis and characteristics of lanthanumdoped pb(Zr₀.₆₅Ti ₀.₃₅)O₃ ceramics

2021 ◽  
Vol 8 (3) ◽  
pp. 14-19
Author(s):  
Thuy Nguyen Thanh ◽  
Tung Nguyen Van ◽  
Hung Nguyen Trong ◽  
Minh Cao Duy
Keyword(s):  
Electron Microscopy ◽  
Scanning Electron Microscopy ◽  
Dielectric Constant ◽  
Reaction Temperature ◽  
Lead Zirconate Titanate ◽  
Lead Zirconate ◽  
X Ray Diffraction ◽  
X Ray ◽  
Influence Of Ph ◽  
Scanning Electron

Lanthanum-doped lead zirconate titanate (PLZT) powders were synthesized using thehydrothermal method. The influence of pH, reaction temperature and time, lanthanum concentration on the formation and characteristics of PLZT were investigated. Obtained powders were investigated using X-ray diffraction analysis (XRD), scanning electron microscopy (SEM) techniques and a dielectric analyzer. The results showed that           Pb1-xLax(Zr0.65Ti0.35)O3 with x= 0.0 – 0.1 were well formed under conditions: pH≥13, reaction time of 12hrs, reaction temperature of 180oC. Dielectric constant of PLZT is higher than PZT. The grain size of the PLZT is found to be 1–3.5 µm.

Synthesis and Film Investigation of Titania

2013 ◽  
Vol 832 ◽  
pp. 128-131
Author(s):  
Sharipah Nadzirah ◽  
Uda Hashim
Keyword(s):  
Thin Film ◽  
Electron Microscopy ◽  
Thin Films ◽  
Scanning Electron Microscopy ◽  
Titanium Dioxide ◽  
Sol Gel ◽  
Titanium Butoxide ◽  
Before And After ◽  
Scanning Electron ◽  
Spin Coater

Titania or titanium dioxide (TiO2) thin film has been synthesized via sol-gel method with monoethanolamine (MEA) as a catalyst. The mixing of titanium butoxide as a precursor, ethanol as a solvent and MEA were stirred using magnetic stirrer under ambient temperature [. The TiO2solution prepared then was deposited on SiO2substrates using spin-coater and the coated films were annealed at 600°C. Finally, both before and after annealed TiO2thin films were characterized using Field Emission Scanning Electron Microscopy (FESEM). The obtained results show the different TiO2particles formation before and after annealed.

SiO2ZrO2 Thin Films as Low Temperature NO2 and O3 Sensors

2015 ◽  
Vol 1088 ◽  
pp. 81-85 ◽  
Author(s):  
T.N. Myasoedova ◽  
Victor V. Petrov ◽  
Nina K. Plugotarenko ◽  
Dmitriy V. Sergeenko ◽  
Galina Yalovega ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Scanning Electron Microscopy ◽  
Low Temperature ◽  
Annealing Temperature ◽  
Sol Gel ◽  
X Ray Diffraction ◽  
X Ray ◽  
Operating Temperatures ◽  
Scanning Electron

Thin SiO2ZrO2films were prepared, up to 0.2 μm thick, by means of the sol–gel technology and characterized by a Scanning electron microscopy and X-ray diffraction. It is shown the presence of monoclinic, cubic and tetragonal phases of ZrO2in the SiO2matrix. The crystallites sizes depend on the annealing temperature of the film and amount to 35 and 56 nm for the films annealed at 773 and 973 K, respectively. The films resistance is rather sensitive to the presence of NO2and O3impurity in air at lower operating temperatures in the range of 30-60°C.

Sol-Gel Synthesis and Characterization of BiFeO3-PbTiO3 Thin Films

2007 ◽  
Vol 997 ◽  
Author(s):  
Ashish Garg ◽  
Soumya Kar ◽  
Anju Dixit ◽  
D C Agrawal
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Scanning Electron Microscopy ◽  
Sol Gel ◽  
Grazing Incidence ◽  
Synthesis And Characterization ◽  
Sol Gel Synthesis ◽  
Polycrystalline Form ◽  
Scanning Electron

AbstractIn this work, we report on the synthesis and characterization of thin films of (BiFeO3)1−x (PbTiO3)x (BFPT) solid solutions of compositions around morphotropic phase boundary (MPB) grown on platinized silicon (111) Pt/TiO2/SiO2/Si substrate by sol-gel based spin coating technique. The films were post-annealed at 700 and 750°C for 1 h in air. Morphological analysis of the films was carried out by scanning electron microscopy. Grazing incidence X-ray diffractometry revealed the perovskite structure of the films and peaks suggested the presence of rhombohedral structured pure BFPT phase in polycrystalline form. Scanning electron microscopy suggested that films annealed at 750degC had a denser microstructure as compared to those at 700°C. The room temperature dielectric constant of the films with composition of BF:PT :: 75:25 was measured to be ∼1200 at a frequency of 100 kHz.

Structural Properties of Sn-Doped ZnO Thin Films Deposited on Glass Substrate Using Sol-Gel Immersion Method

2015 ◽  
Vol 1109 ◽  
pp. 568-571
Author(s):  
Shafura Karim ◽  
Uzer Mohd Noor ◽  
M.H. Mamat ◽  
Shuhaimi Abu Bakar ◽  
Salman A.H. Alrokayan ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Scanning Electron Microscopy ◽  
Zinc Oxide ◽  
Glass Substrate ◽  
Sol Gel ◽  
Zno Thin Films ◽  
Immersion Method ◽  
Doped Zno ◽  
Scanning Electron

Tin-doped Zinc Oxide (Sn-doped ZnO) thin films were prepared using zinc acetate dehydrate as a starting material by sol-gel immersion method. The doping concentrations were varied at 0 at.%, 1.0 at.%, 2.0 at.% and 3.0 at.%. The synthesized samples were characterized by Field Emission Scanning Electron Microscopy (FESEM).

Electrical Properties of Amorphous Thin Films of Ferroelectric Oxides Prepared by Sol-Gel Technique

1993 ◽  
Vol 310 ◽  
Author(s):  
Yuhuan Xu ◽  
Ren Xu ◽  
Chih-Hsing Cheng ◽  
John D. Mackenzie
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Lead Zirconate Titanate ◽  
Sol Gel ◽  
Lead Zirconate ◽  
Ferroelectric Thin Films ◽  
Amorphous Thin Films ◽  
Crystalline Films ◽  
Gel Technique ◽  
Ferroelectric Oxides

AbstractAmorphous thin films of ferroelectric oxides including lead zirconate titanate (PZT), barium titanate (BaTiO3) and lithium niobate (LiNbO3) on several kinds of substrates were prepared by a sol-gel technique. The heat-treatment temperatures for preparation of amorphous thin films were much lower than those for the corresponding crystalline ferroelectric thin films. Electrical properties of these amorphous thin films were measured and compared with those of corresponding crystalline films. These amorphous thin films exhibited ferroelectric-like behavior. A model of the microstructure of these films is proposed.

Synthesis of Pb1-xYbx(Zr0.52Ti0.48)O3 Nanopowders by a Modified Sol-Gel Process Using Zirconium Oxynitrate Source

2007 ◽  
Vol 121-123 ◽  
pp. 223-226
Author(s):  
Qiu Sun ◽  
Fu Ping Wang ◽  
Zhao Hua Jiang
Keyword(s):  
Thin Films ◽  
Lead Zirconate Titanate ◽  
Sol Gel ◽  
Lead Zirconate ◽  
Ferroelectric Thin Films ◽  
Phase Changes ◽  
Nanocrystalline Powders ◽  
Cation Substitution ◽  
Memory Devices ◽  
Pzt Thin Films

Ferroelectric lead zirconate titanate(PZT)thin films have attracted great attention because of their potential applications in memory devices[1] due to their unique properties, for example, hysteresis loop and high dielectric constant. To realize these memory devices, it is necessary to overcome the reliability problems such as fatigue, retention and imprint. It is well known that lead base perovskite family ferroelectric thin films with donor dopant such as La3+ and Nb5+ have improved the electrical properties of PZT thin films effectively [2-3]. And it is proposed that the cation substitution could reduce the number of defects such as oxygen vacancies, which could promote electrical fatigue and leakage current of PZT ferroelectric thin films obviously. In the present study, rare earth Yb-doped lead zirconium titanate (PYZT) nanocrystalline powders with a composition near the morphotropic phase boundary (Zr/Ti=52/48) were prepared by a modified sol-gel method. DTA/TG and XRD were used to determine the thermal and phase changes in the formation of PYZT crystalline powders. The effect of Yb3+ cation substitution for Pb2+ cation on the microstructure of PZT was developed with XRD. The grain size of PYZT nanopowders is about 40 nm determined by TEM.

Ferroelectric Thin Films for Microelectromechanical Device Applications

1992 ◽  
Vol 276 ◽  
Author(s):  
D. L. Polla ◽  
W. P. Robbins ◽  
T. Tamagawa ◽  
C. Ye
Keyword(s):  
Thin Films ◽  
Lead Zirconate Titanate ◽  
Sol Gel ◽  
Lead Zirconate ◽  
Pyroelectric Coefficient ◽  
Ferroelectric Thin Films ◽  
Zirconate Titanate ◽  
Microelectromechanical Devices ◽  
Device Applications ◽  
Silicon Based

ABSTRACTFerroelectric thin films of the lead zirconate titanate family have been integrated with silicon-based micromachined structures in the fabrication of microelectromechanical devices. Sol-gel deposition techniques have been applied in the formation of ferroelectric thin films with high piezoelectric and pyroelectric coefficients for physical forces sensors and infrared detectors, respectively. Knowledge of both electrical and mechanical properties is important in realizing microelectromechanical devices with predictable performance. This pape reports piezoelectric coefficient, pyroelectric coefficient, dielectric constant, and Young's modulus for lead zirconate titanate and lead titanate thin films.

A Study on the Microstructure of Preferred Orientation of Lead Zirconate Titanate (PZT) Thin Films

1997 ◽  
Vol 12 (4) ◽  
pp. 1043-1047 ◽  
Author(s):  
Chang Jung Kim ◽  
Dae Sung Yoon ◽  
Joon Sung Lee ◽  
Chaun Gi Choi ◽  
Kwangsoo No
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Lead Zirconate Titanate ◽  
Sol Gel ◽  
Lead Zirconate ◽  
Preferred Orientation ◽  
X Ray Diffraction ◽  
Pzt Thin Films ◽  
X Ray ◽  
Zirconate Titanate

The lead zirconate titanate (PZT) thin films were fabricated using sol-gel spin coating onto Pt/Ti/glass substrates. Effects of the holding time for pyrolysis and the coating cycle on the preferred orientation of the PZT thin films were studied. The films were fabricated with different coating cycles (3, 5, 7, 9, 11), dried at 330 °C for different holding times (5, 30, 60 min), and then annealed at the same temperature of 650 °C using rapid thermal annealing (RTA). The preferred orientations of the films were investigated using x-ray diffraction and glancing angle x-ray diffraction. The microstructure and the selected area diffraction pattern of the PZT thin films were also investigated using scanning electron microscopy (SEM) and transmission electron microscopy (TEM), respectively.

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