High Velocity Aerosol Cleaning with Organic Solvents: Particle Removal and Substrate Damage

2009 ◽  
Vol 145-146 ◽  
pp. 39-42 ◽  
Author(s):  
Michael T. Andreas ◽  
Kurt Wostyn ◽  
Masayuki Wada ◽  
Tom Janssens ◽  
Karine Kenis ◽  
...  
Keyword(s):  
High Velocity ◽  
Particle Removal ◽  
Spray Nozzle ◽  
Cleaning Process ◽  
Ultrapure Water ◽  
Cleaning Efficiency ◽  
Impact Forces ◽  
Cleaning System ◽  
Aerosol Spray ◽  
Dilute Aqueous Solutions

High velocity aerosol cleaning using ultrapure water or dilute aqueous solutions (e.g. dilute ammonia) is common in semiconductor IC fabrication [1]. This process combines droplet impact forces with continuous liquid flow for improved cleaning efficiency of sub-100nm particles. As with any physically enhanced cleaning process, improved particle removal can be accompanied by increased substrate damage, especially to smaller (<80nm) features [2]. Solvents such as N-methylpyrrolidone (NMP) and tetrahydrofurfuryl alcohol (THFA) are used for resist strip applications [3]. It is possible, and sometimes useful, to deliver these solvents through the same spray nozzle normally used for aqueous spray cleaning. In this presentation we explore the particle removal and substrate damage performance of 2-ethoxyethanol (EGEE), NMP and THFA as used in a conventional aerosol spray cleaning system

Mechanism of PVA Brush Loading with Ceria Particles during Post-CMP Cleaning Process

2021 ◽  
Vol 314 ◽  
pp. 259-263
Author(s):  
Samrina Sahir ◽  
Hwi Won Cho ◽  
Nagendra Prasad Yerriboina ◽  
Tae Gon Kim ◽  
Satomi Hamada ◽  
...  
Keyword(s):  
Electrostatic Attraction ◽  
Particle Removal ◽  
Cross Contamination ◽  
Cleaning Process ◽  
Particle Loading ◽  
Cleaning Efficiency ◽  
Solution Ph ◽  
Cleaning Solution ◽  
Oppositely Charged ◽  
Process Interaction

Brush scrubbing is a well-known post CMP cleaning process. Interaction between PVA brush and the particles removed during the process must be considered while designing a cleaning process. In this work, the effect of cleaning solution pH was investigated in terms of particle removal from the wafer and subsequent loading to the PVA brush nodule. Higher cleaning of particles from wafer was observed for pH 2 and 12 cleaning solutions and poor cleaning for pH 7 cleaning solution. In contrast, the brushes were loaded heavily for pH 7 compared to pH 2 and 12. Higher electrostatic attraction between oppositely charged PVA and ceria surfaces provided higher ceria particles loading to PVA brush in acidic and neutral cleaning solutions. This particle loading to PVA brush can further effect cleaning efficiency as well as cross-contamination.

The Influence of the Angle of Incidence in Megasonic Cleaning

2012 ◽  
Vol 187 ◽  
pp. 163-166 ◽  
Author(s):  
Steven Brems ◽  
Marc Hauptmann ◽  
Elisabeth Camerotto ◽  
Xiu Mei Xu ◽  
Stefan De Gendt ◽  
...  
Keyword(s):  
Silicon Wafer ◽  
Acoustic Waves ◽  
Angle Of Incidence ◽  
Particle Removal ◽  
Cleaning Process ◽  
Acoustic Transmission ◽  
Cleaning Efficiency ◽  
Megasonic Cleaning ◽  
Schlichting Streaming ◽  
Si Wafer

The megasonic cleaning efficiency is evaluated as a function of the angle of incidence of acoustic waves on a Si wafer. Acoustic Schlichting streaming alone is not able to remove nanoparticles smaller than 400 nm. It is shown that oscillating or collapsing behavior of bubbles are responsible for removing nanoparticles smaller than 400 nm during a cleaning process with ultrasound. Optimal particle removal efficiency is obtained around the angle of acoustic transmission of the silicon wafer.

Exploratory Materials and Devices to Advance CMOS beyond the Classical Si Roadmap

2012 ◽  
Vol 187 ◽  
pp. 3-5 ◽  
Author(s):  
Marc M. Heyns
Keyword(s):  
Silicon Wafer ◽  
Acoustic Waves ◽  
Angle Of Incidence ◽  
Particle Removal ◽  
Cleaning Process ◽  
Acoustic Transmission ◽  
Cleaning Efficiency ◽  
Megasonic Cleaning ◽  
Schlichting Streaming ◽  
Si Wafer

The megasonic cleaning efficiency is evaluated as a function of the angle of incidence of acoustic waves on a Si wafer. Acoustic Schlichting streaming alone is not able to remove nanoparticles smaller than 400 nm. It is shown that oscillating or collapsing behavior of bubbles are responsible for removing nanoparticles smaller than 400 nm during a cleaning process with ultrasound. Optimal particle removal efficiency is obtained around the angle of acoustic transmission of the silicon wafer.

Study on Cu Cleaning Efficacy Depending on Initial Contamination Method

1997 ◽  
Vol 477 ◽  
Author(s):  
J. S. Kim ◽  
H. Morita ◽  
J. D. Joo ◽  
T. Ohmi
Keyword(s):  
Hydrofluoric Acid ◽  
Dissolution Process ◽  
Cleaning Process ◽  
Ultrapure Water ◽  
Cleaning Efficiency ◽  
Chemical Solutions ◽  
Cleaning Efficacy ◽  
Etching Effect ◽  
Initial Contamination ◽  
Better Than

ABSTRACTWe investigated a dependence of cleaning efficiency for Cu on the initial contamination method with different initial concentration and contamination solution. Through this study, we found that the cleaning efficiency of typical dissoluble chemical solutions such as O3-UPW, SPM and HPM for Cu contaminated in diluted-hydrofluoric acid (DHF) was better than for that in ultrapure water (UPW). And, it is shown that there is a dependence of cleaning efficiency for Cu contaminated in UPW. The different desorption behaviors of Cu contaminated in UPW and DHF can be interpreted by the fact that the Cu is included in metal-induced-oxide (MIO) grown during contamination in UPW and can not be removed by only dissolution process of O3-UPW, SPM and HPM solutions which have no etching effect on SiO2 and Si. In contrast, a relatively low concentration Cu contaminated in DHF which has no MIO effect can be removed below the detection limit by only dissolution process of these chemical solutions. However, Cu contaminated in DHF is dissolved and inserted in the chemical oxide grown during cleaning process as the initial Cu concentration is a relatively high. Consequently, we conclude that Cu on Si surface can be fundamentally removed by just dissolution process of typical dissoluble chemicals except the amount of Cu inserted in MIO grown during contamination in UPW and chemical oxide grown in chemical solutions.

scholarly journals Use of ultrasound for cleaning of components of historical vehicles in Technical Museum in Brno

2020 ◽  
Vol 64 (3) ◽  
pp. 79-86
Author(s):  
K. Rapouch ◽  
M. Mrázek
Keyword(s):  
Water Drop ◽  
Bath Temperature ◽  
Cleaning Process ◽  
Fuel System ◽  
Dissolved Metals ◽  
Cleaning Efficiency ◽  
Ultrasound Frequency ◽  
Aas Method ◽  
Ultrasound Effect

Abstract In the collections of Technical Museum in Brno, large number of historical vehicles is placed. During the operation, parts of their motors are being fouled. Frequently, they become even immobile (e. g. due to a fouled fuel system). In this case, the method using ultrasound with a suitable concentrate appears as the most suitable. In fact, ultrasound works also in inaccessible places with large efficiency. Not only the chosen solution influences the cleaning efficiency, but also parameters as time, bath temperature and ultrasound frequency. The cleaning process was evaluated according to the volume of removed dirt and by observing wettability change using the measuring of contact angle of a water drop. The ultrasound shock waves influence the surface to a certain extent also mechanically. That is why, the ultrasound effect on defects in the structure was observed. The aggressivity of cleaning concentrates was evaluated on the ground of determination of dissolved metals in the baths by ET AAS method.

Hydrogenated Ultrapure Water Production System for Future Wet Cleaning Process

1998 ◽  
Vol 65-66 ◽  
pp. 7-10 ◽  
Author(s):  
Hiroshi Morita ◽  
Jun ichi Ida ◽  
T. Mizuniwa ◽  
Tadahiro Ohmi
Keyword(s):  
Production System ◽  
Cleaning Process ◽  
Water Production ◽  
Ultrapure Water

Effect of Various Cleaning Solutions and Brush Scrubber Kinematics on the Frictional Attributes of Post Copper CMP Cleaning Process

2009 ◽  
Vol 145-146 ◽  
pp. 363-366 ◽  
Author(s):  
Yasa Sampurno ◽  
Yun Zhuang ◽  
Xun Gu ◽  
Sian Theng ◽  
Takenao Nemoto ◽  
...  
Keyword(s):  
Vinyl Alcohol ◽  
Direct Contact ◽  
Chemical Mechanical Planarization ◽  
Wafer Surface ◽  
Poly Vinyl Alcohol ◽  
Particle Removal ◽  
Cleaning Process ◽  
Cleaning Performance ◽  
Cleaning Solution ◽  
Copper Cmp

Brush scrubbing has been widely used in post chemical mechanical planarization (CMP) applications to remove contaminations, such as slurry residues and particles, from the wafer surface. During brush scrubbing, particle removal results from direct contact between a soft poly vinyl alcohol (PVA) brush and the wafer surface in which the brush asperities engulf the particles while the rotating motion of the brush, as well as the cleaning fluid at the surface, dislodge and carry the particles away from the wafer. The cleaning performance of brush scrubbing depends heavily on the choice of the cleaning solution and brush scrubber kinematics. In this work, the effect of various cleaning solutions and brush scrubber kinematics on the frictional attributes of post copper CMP cleaning process was investigated.

Physical Cleaning Enhancement Using Advanced Spray with Uniform Droplet Control

2012 ◽  
Vol 195 ◽  
pp. 195-197 ◽  
Author(s):  
Ying Hsueh Chang Chien ◽  
Matt Yeh ◽  
Scott Ku ◽  
C.M. Yang ◽  
C.C. Chen ◽  
...  
Keyword(s):  
Semiconductor Device ◽  
Droplet Diameter ◽  
Particle Removal ◽  
Physical Force ◽  
Cleaning Efficiency ◽  
Lift Off ◽  
The Moment ◽  
The Relationship ◽  
Uniform Droplet ◽  
Droplet Control

In semiconductor device manufacturing, single wafer processors are widely used in not only BEOL process but also in FEOL process for 2X devices to improve the cleaning efficiency and get the higher productivity. Because the scaled down devices require the minimum substrate loss in the cleaning steps, the physical force by a dual fluid spray is still the main position to improve the cleaning efficiency at the moment comparing with chemical effects as the dissolution of contaminants and/or the lift off of particles. Sato, et al., reported that the relationship between particle removal and droplet characteristics linked to the droplet energy densityEdas following equation [. The kinetic energyEkof droplet is calculated from droplet diameterdand velocityv, as shown in Equation 1.

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