Calibration of IR Absorbance in Highly Nitrogen Doped Silicon
2013 ◽
Vol 205-206
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pp. 234-237
Keyword(s):
Infrared absorption spectra of highly nitrogen doped multicrystalline float zone silicon are reported. By measuring the nitrogen content in silicon using SIMS, a calibration function of the IR absorption coefficient at 963 cm-1(T = 300 K) and the nitrogen concentration is deduced:cN= (1.29 ± 0.05)×1017cm2α963. The calibration factor is 30 % less than the calibration factor reported by Y. Itoh et al. [Appl. Phys. Lett. 47 (1985) 488].
2018 ◽
Vol 27
(03)
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pp. 1850030
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1995 ◽
Vol 49
(11)
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pp. 1646-1651
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1974 ◽
Vol 39
(2)
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pp. 376-379
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Keyword(s):
1972 ◽
Vol 56
(2)
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pp. 759-762
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1961 ◽
Vol 81
(10)
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pp. 1525-1528
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1960 ◽
Vol 33
(3)
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pp. 900-902
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Keyword(s):
1972 ◽
Vol 11
(1)
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pp. 209-212
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Keyword(s):