Defect Control in Zinc Oxynitride Semiconductor for High-Performance and High-Stability Thin-Film Transistors

2013 ◽  
Vol 205-206 ◽  
pp. 446-450 ◽  
Author(s):  
Hyun Suk Kim ◽  
Joon Seok Park ◽  
Tae Sang Kim ◽  
Kyoung Seok Son ◽  
Jong Baek Seon ◽  
...  
Keyword(s):  
Thin Film ◽  
High Performance ◽  
Thin Film Transistor ◽  
Shallow Donor ◽  
Flat Panel Displays ◽  
Electrical Characteristics ◽  
Field Effect Mobility ◽  
Flat Panel ◽  
Defect Control ◽  
Donor Nitrogen

The fabrication of thin-film transistor devices incorporating active semiconductors based on zinc oxynitride (ZnON) compound is presented. It is demonstrated that the addition of appropriate dopant, gallium, in ZnON, suppresses the formation of shallow donor, nitrogen vacancies, and significantly improves electrical characteristics of the resulting TFT. The Ga:ZnON devices with field-effect mobility values exceeding 50 cm2/Vs are achieved, which makes them suitable as switching or driving elements in next-generation flat-panel displays.

The electrical performance of a complementary CdSe:In/Ge:Cu thin film transistor technology for flat panel displays

1991 ◽  
Vol 34 (2) ◽  
pp. 143-147 ◽  
Author(s):  
J. Doutreloigne ◽  
J. De Baets ◽  
I. De Rycke ◽  
H. De Smet ◽  
A. Van Calster ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistor ◽  
Electrical Performance ◽  
Flat Panel Displays ◽  
Flat Panel

High Performance Thin Film Transistors for Scanner Applications

1990 ◽  
Vol 182 ◽  
Author(s):  
B.-C. Hseih ◽  
G.A. Hawkins ◽  
S. Ashok
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Polycrystalline Silicon ◽  
High Performance ◽  
Silicon Film ◽  
Chemical Vapor ◽  
Gate Insulator ◽  
Flat Panel Displays ◽  
Flat Panel ◽  
Amorphous Silicon Film

AbstractWe report on the characteristics of polycrystalline silicon (polysilicon) thin film transistors (TFTs) fabricated with low temperature crystallized LPCVD amorphous silicon film as an active layer and plasma enhanced chemical vapor deposition (PECVD) SiO2 as a gate insulator. High performance transistor characteristics are achieved, even though no process temperature exceeds 600°C. No threshold drift has been observed. As a result, these devices are highly suitable for application to image scanners as well as flat panel displays.

scholarly journals Improvement of Electrical Performance in P-Channel LTPS Thin-Film Transistor with a-Si:H Surface Passivation

2018 ◽  
Author(s):  
Kyungsoo Jang ◽  
Pham Duy Phong ◽  
Yoonjung Lee ◽  
Joonghyun Park ◽  
Junsin Yi
Keyword(s):  
Thin Film ◽  
High Performance ◽  
Surface Passivation ◽  
Thin Film Transistor ◽  
Passivation Layer ◽  
Electrical Performance ◽  
Electrical Characteristics ◽  
Silicon Thin Film ◽  
Hydrogen Dilution ◽  
Defect Sites

We report the effects of surface passivation by depositing a hydrogenated amorphous silicon (a-Si:H) layer on the electrical characteristics of low temperature polycrystalline silicon thin film transistors (LTPS TFTs). The a-Si:H layer was optimized by hydrogen dilution and its structural and electrical characteristics were investigated. The a-Si:H layer in the transition region between a-Si:H and µc-Si:H resulted in superior device characteristics. Using an a-Si:H passivation layer, the field-effect mobility of the LTPS TFT was increased by 78.4% compared with a conventional LTPS TFT. Moreover, the leakage current measured at a VGS of 5 V was suppressed because the defect sites at the poly-Si grain boundaries were well passivated. Our passivation layer, which allows thorough control of the crystallinity and passivation-quality, should be considered a candidate for high performance LTPS TFTs.

scholarly journals Improvement of Electrical Performance in P-Channel LTPS Thin-Film Transistor with a-Si:H Surface Passivation

Materials ◽  
2019 ◽  
Vol 12 (1) ◽  
pp. 161 ◽  
Author(s):  
Kyungsoo Jang ◽  
Youngkuk Kim ◽  
Pham Duy Phong ◽  
Younjung Lee ◽  
Joonghyun Park ◽  
...  
Keyword(s):  
Thin Film ◽  
High Performance ◽  
Surface Passivation ◽  
Thin Film Transistor ◽  
Passivation Layer ◽  
Electrical Performance ◽  
Electrical Characteristics ◽  
Silicon Thin Film ◽  
Hydrogen Dilution ◽  
Defect Sites

We report the effects of surface passivation by depositing a hydrogenated amorphous silicon (a-Si:H) layer on the electrical characteristics of low temperature polycrystalline silicon thin film transistors (LTPS TFTs). The intrinsic a-Si:H layer was optimized by hydrogen dilution and its structural and electrical characteristics were investigated. The a-Si:H layer in the transition region between a-Si:H and µc-Si:H resulted in superior device characteristics. Using a-Si:H passivation layer, the field-effect mobility of the LTPS TFT was increased by 78.4% compared with conventional LTPS TFT. Moreover, the leakage current measured at VGS of 5 V was suppressed because the defect sites at the poly-Si grain boundaries were well passivated. Our passivation layer, which allows thorough control of the crystallinity and passivation-quality, should be considered as a candidate for high performance LTPS TFTs.

Sign in / Sign up

Export Citation Format

Share Document