The Pastes with Prototype Additive Deposited on Front Side Metallization Used in Photovoltaic Solar Cells

2019 ◽  
Vol 293 ◽  
pp. 65-72
Author(s):  
Małgorzata Musztyfaga-Staszuk
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
High Temperature ◽  
Fill Factor ◽  
Silicon Solar Cells ◽  
Front Side ◽  
Silver Paste ◽  
Production Processes ◽  
Photovoltaic Solar Cells ◽  
Screen Printed

In this paper are presented both the fill factor of 0.75 and an efficiency approaching 14.64 % of solar cell, which were achieved, despite the non-optimized process. A new Cu-based additive of pastes were applied for formation of front contact on silicon solar cells. Front contact were screen-printed using commercial silver paste containing the CuXX additive prepared at laboratory. It is the world's first copper based paste appropriate for high-temperature production processes of front contact of the solar cell.

Study of the Processing and Characterization of the Mixture of Oxides of Al2O3-Y2O3-Nb2O5

2019 ◽  
Vol 958 ◽  
pp. 1-4
Author(s):  
Ricardo de Freitas Cabral ◽  
Marcelo Henrique Prado da Silva ◽  
Eduardo de Sousa Lima
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
High Temperature ◽  
Fill Factor ◽  
Silicon Solar Cells ◽  
Silver Paste ◽  
Production Processes ◽  
Screen Printed

In this paper are presented both the fill factor of 0.75 and an efficiency approaching 14.64 % of solar cell, which were achieved, despite the non-optimized process. A new Cu-based additive of pastes were applied for formation of front contact on silicon solar cells. Front contact were screen-printed using commercial silver paste containing the CuXX additive prepared at laboratory. It is the world's first copper based paste appropriate for high-temperature production processes of front contact of the solar cell.

scholarly journals Non-volatile free silver paste formulation for front-side metallization of silicon solar cells

2019 ◽  
Vol 200 ◽  
pp. 110040 ◽  
Author(s):  
Ceren Yüce ◽  
Kuninori Okamoto ◽  
Lindsey Karpowich ◽  
Adrian Adrian ◽  
Norbert Willenbacher
Keyword(s):  
Solar Cells ◽  
Silicon Solar Cells ◽  
Front Side ◽  
Silver Paste

scholarly journals Screen Printed Metallization of Silicon Solar Cells

1980 ◽  
Vol 7 (1-3) ◽  
pp. 107-111 ◽  
Author(s):  
L. Frisson ◽  
Ph. Lauwers ◽  
R. Mertens ◽  
R. Van Overstraeten ◽  
R. Govaerts
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Contact Resistance ◽  
Process Optimization ◽  
Screen Printing ◽  
Silicon Solar Cells ◽  
Printing Process ◽  
Screen Printed

This paper presents a screen printing process for the metallization of silicon solar cells. The physics and construction of a classical solar cell are reviewed. The results obtained with a screen printing process are comparable with other, more expensive technologies. This technology does not introduce an additional contact resistance on silicon. The process optimization and the influence of different parameters are discussed.

Influence of ITO layer application on electrical parameters of silicon solar cells with screen printed front electrode

2016 ◽  
Vol 33 (3) ◽  
pp. 172-175 ◽  
Author(s):  
Kazimierz Drabczyk ◽  
Jaroslaw Domaradzki ◽  
Grazyna Kulesza-Matlak ◽  
Marek Lipinski ◽  
Danuta Kaczmarek
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Crystalline Silicon ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Electrical Performance ◽  
Silicon Solar Cells ◽  
Content Type ◽  
Crystalline Silicon Solar Cells ◽  
Screen Printed

Purpose The purpose of this paper was investigation and comparison of electrical and optical properties of crystalline silicon solar cells with ITO or TiO2 coating. The ITO, similar to TiO2, is very well transparent in the visible part of optical radiation; however, its low resistivity (lower that 10-3 Ohm/cm) makes it possible to use simultaneously as a transparent electrode for collection of photo-generated electrical charge carriers. This might also invoke increasing the distance between screen-printed metal fingers at the front of the solar cell that would increase of the cell’s active area. Performed optical investigation showed that applied ITO thin film fulfill standard requirements according to antireflection properties when it was deposited on the surface of silicon solar cell. Design/methodology/approach Two sets of samples were prepared for comparison. In the first one, the ITO thin film was deposited directly on the crystalline silicon substrate with highly doped emitter region. In the second case, the TCO film was deposited on the same type of silicon substrate but with additional ultrathin SiO2 passivation. The fingers lines of 80 μm width were then screen-printed on the ITO layer with two different spaces between fingers for each set. The influence of application of the ITO electrode and the type of metal electrodes patterns on the electrical performance of the prepared solar cells was investigated through optical and electrical measurements. Findings The electrical parameters such as short-circuit current (Jsc), open circuit voltage (Voc), fill factor (FF) and conversion efficiency were determined on a basis of I-V characteristics. Short-circuit current density (Jsc) was equal to 32 mA/cm2 for a solar cell with a typical antireflection layer and 31.5 mA/cm2 for the cell with ITO layer, respectively. Additionally, electroluminescence of prepared cells was measured and analysed. Originality/value The influence of the properties of ITO electrode on the electrical performance of crystalline silicon solar cells was investigated through complex optical, electrical and electroluminescence measurements.

scholarly journals Assessing the impact of front grid metallization pattern on the performance of silicon solar cells

2021 ◽  
Author(s):  
Saba Siraj ◽  
Sofia Akbar Tahir ◽  
Adnan Ali
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Contact Resistance ◽  
Silicon Solar Cell ◽  
Fill Factor ◽  
Short Circuit ◽  
Research Work ◽  
Maximum Efficiency ◽  
Silicon Solar Cells ◽  
The Impact

Abstract The aim of this research work was to assess the impact of front and rear grid metallization pattern on the performance of silicon solar cells. We have investigated the effect of front grid metallization design and geometry on the open-circuit voltage (Voc), short circuit current density (Jsc), fill factor (FF) and efficiency (ŋ) of silicon solar cells by using Griddler 2.5 simulation program. We used different number of metal fingers ranging from 80–120 having width of 60 µm and different number of busbars ranging from 1–5 busbars on the front and rear side of solar cells for optimization. We have also calculated the efficiency and fill factor at different values of front contact resistance ranging from (0.1–100) mohm-cm2, front and rare layer sheet resistances ranging from (60–110) ohm/sq and different edge gaps. We found that the maximum efficiency and fill factor was obtained with those parameters, when front and rare contact resistances were taken as same. We have designed an optimized silicon solar cell with 115 number of fingers, 4 busbars, front and rare contact resistance of 0.1 mohm-cm2 and front and rare layer sheet resistance of 60 ohm/sq. In this way we were able to successfully optimize the silicon solar cell having efficiency and fill factor of 19.49 % and 81.36 % respectively, for our best optimized silicon solar cell.

scholarly journals Evaluation of Shunt Losses in Industrial Silicon Solar Cells

2016 ◽  
Vol 2016 ◽  
pp. 1-9 ◽  
Author(s):  
P. Somasundaran ◽  
R. Gupta
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Infrared Thermography ◽  
Fill Factor ◽  
Silicon Solar Cells ◽  
Experimental Measurements ◽  
Performance Reduction ◽  
Key Issues ◽  
Simulation Results ◽  
Lock In

Shunting is one of the key issues in industrial silicon solar cells which degrade cell performance. This paper presents an approach for investigation of the performance degradation caused by the presence of ohmic extended shunts at various locations in industrial silicon solar cells. Location, nature, and area of the shunts existing in solar cells have been examined by lock-in infrared thermography (LIT). Based on LIT images and experimental darkI-Vcurves of solar cell, shunted cell has been modeled, from which loss in fill factor and efficiency due to the specific shunt has been obtained. Distributed diode modeling approach of solar cell has been exploited for obtaining simulation results which were supported by experimental measurements. The presented approach is useful to estimate performance reduction due to specific shunts and to quantify losses, which can help in improving the efficiency of solar cell during production by tackling the shunt related problems based on the level of severity and tolerance.

Kinetics of Light-Induced Effects in Mixed-Phase Hydrogenated Silicon Solar Cells

2003 ◽  
Vol 762 ◽  
Author(s):  
Guozhen Yuea ◽  
Baojie Yan ◽  
Jeffrey Yang ◽  
Kenneth Lord ◽  
Subhendu Guha
Keyword(s):  
Solar Cells ◽  
Fill Factor ◽  
Equivalent Circuit Model ◽  
Open Circuit ◽  
Mixed Phase ◽  
Silicon Solar Cells ◽  
Initial Increase ◽  
Soaking Time ◽  
Hydrogenated Silicon ◽  
Kinetics Of

AbstractWe have observed a significant light-induced increase in the open-circuit voltage (Voc) of mixed-phase hydrogenated silicon solar cells. In this study, we investigate the kinetics of the light-induced effects. The results show that the cells with different initial Voc have different kinetic behavior. For the cells with a low initial Voc (less than 0.8 V), the increase in Voc is slow and does not saturate for light-soaking time of up to 16 hours. For the cells with medium initial Voc (0.8 ∼ 0.95 V), the Voc increases rapidly and then saturates. Cells with high initial Voc (0.95 ∼ 0.98 V) show an initial increase in Voc, followed bya Voc decrease. All light-soaked cells exhibit a degradation in fill factor. The temperature dependence of the kinetics shows that light soaking at high temperatures causes Voc increase to saturate faster than at low temperatures. The observed results can be explained by our recently proposed two-diode equivalent-circuit model for mixed-phase solar cells.

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