Roughness and Uniformity Control during Wet Etching of Molybdenum

2021 ◽  
Vol 314 ◽  
pp. 295-301
Author(s):  
Antoine Pacco ◽  
Yuya Akanishi ◽  
Quoc Toan Le
Keyword(s):  
Thin Films ◽  
Etch Rate ◽  
Wet Etching ◽  
Oxide Dissolution ◽  
Ozonated Water

In this work the wet etching of molybdenum thin films was investigated for applications requiring controlled recess without roughening or pattern loading. First, continuous etching of Mo in alkaline and oxidative peroxide solutions was studied. Then, additives like glycine and diethylenetriamine were used and their effect on etch rate and roughness was assessed. Finally, we evaluated if the requirements for a stepwise etching approach for Mo recess using peroxide or ozonated water as the oxidizing step and ammonia as the oxide dissolution agent were met.

The influence of contact material on lateral wet-etching of nickel thin films in lamellae structure

2018 ◽  
Vol 660 ◽  
pp. 19-22 ◽  
Author(s):  
Jeong Hwan Kim ◽  
Jik-Han Jeong ◽  
Seung-Hun Lee ◽  
Kwanoh Kim ◽  
Jae Sung Yoon ◽  
...  
Keyword(s):  
Thin Films ◽  
Wet Etching ◽  
Contact Material ◽  
Nickel Thin Films ◽  
Lamellae Structure

Temperature Dependence of Ar Sputtering of CoSi2 Thin Films on Si and SiO2

1991 ◽  
Vol 235 ◽  
Author(s):  
Q. Z. Hong ◽  
J. M. E. Harper
Keyword(s):  
Thin Films ◽  
Temperature Dependence ◽  
Etch Rate ◽  
Elevated Temperatures ◽  
Ion Sputtering ◽  
Second Stage ◽  
Silicide Layer ◽  
Initial Stage ◽  
Co Concentration ◽  
Argon Ion

ABSTRACTThe temperature dependence of 300 eV argon ion sputtering of CoSi2 thin films in the range 50–600°C has been investigated. At temperatures above 400°C, the etch rate of CoSi2 on Si is significantly reduced, while the underlying Si reacts with the Co atoms diffusing from the silicide surface. As a result, the silicide layer effectively moves into the substrate during Ar bombardment. During sputtering of CoSi2 on Sio2, the thickness of the silicide layer decreases almost linearly with bombarding time until all the silicide is removed. Similar behavior is observed in low temperature sputtering of CoSi2 on (100) Si and evaporated Si. However, at elevated temperatures (400°C< <600°C), sputtering of CoSi2 on Si undergoes two consecutive stages. During the initial stage, the thickness of the silicide layer decreases at the same rate as that of the silicide on SiO2, and is accompanied by an enrichment in Co concentration near the surface. During the second stage, the etch rate of the silicide is reduced to only one third of the rate during the initial stage.

Study of wet etching thin films of indium tin oxide in oxalic acid by monitoring the resistance

2014 ◽  
Vol 567 ◽  
pp. 20-31 ◽  
Author(s):  
Suelene S. Mammana ◽  
Alessandra Greatti ◽  
Francis H. Luiz ◽  
Francisca I. da Costa ◽  
Alaide P. Mammana ◽  
...  
Keyword(s):  
Thin Films ◽  
Oxalic Acid ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Wet Etching

Nanodimple Arrays Fabricated on SiO2Surfaces by Wet Etching through Block Copolymer Thin Films

2008 ◽  
Vol 47 (6) ◽  
pp. 5039-5041 ◽  
Author(s):  
Ryoko Watanabe ◽  
Kaori Kamata ◽  
Tomokazu Iyoda
Keyword(s):  
Thin Films ◽  
Block Copolymer ◽  
Wet Etching

Selective wet-etching and characterization of chalcogenide thin films in inorganic alkaline solutions

2007 ◽  
Vol 353 (13-15) ◽  
pp. 1441-1445 ◽  
Author(s):  
J. Orava ◽  
T. Wagner ◽  
M. Krbal ◽  
T. Kohoutek ◽  
Mil. Vlcek ◽  
...  
Keyword(s):  
Thin Films ◽  
Wet Etching ◽  
Alkaline Solutions ◽  
Chalcogenide Thin Films

Feature Size and Density Effects in Wet Selective Etching of GaAs/AlAs p-HEMT Structures with Organic Acid - Peroxide Solutions.

2003 ◽  
Vol 799 ◽  
Author(s):  
Vinay S. Kulkarni ◽  
Kanti Prasad ◽  
William Quinn ◽  
Frank Spooner ◽  
Changmo Sung
Keyword(s):  
Surface Morphology ◽  
Organic Acid ◽  
Etch Rate ◽  
Low Noise ◽  
Wet Etching ◽  
Low Noise Amplifiers ◽  
Etch Depth ◽  
Feature Size ◽  
Selective Etch ◽  
Etch Stop

ABSTRACTPseudomorphic HEMT (p-HEMT) devices are used in a number of wireless communication applications including power amplifiers in the 17–50 GHz range, low noise amplifiers and switches. Selective wet etching is often used to form the gate regions of these devices to avoid plasma damage associated with dry etching. We have investigated the wet etching of small (8μm to 0.5μm) features with organic acid - hydrogen peroxide solutions. Two acid solutions were used as a selective etchant for GaAs using AlAs etch stop layers in a p-HEMT structure grown by MBE. The etched features were characterized by AFM, SEM, and TEM techniques. The etch depth uniformity and reproducibility were found to depend on a number of factors including feature size, feature density, etching chemistry, agitation and surface tension. When features with a range of size and density were placed in close proximity in a layout we found that the etch rate of the different features was a function of density, size and most importantly the etch chemistry. One etchant solution exhibited a 12% difference in etch rate from the smallest feature to the largest, while another solution exhibited uniform etching of all features regardless of size or density. Both solutions produced specular etched surfaces in GaAs and AlGaAs. However, the AlAs etch stop showed a non-uniform surface morphology after etching. The surface morphology of the AlAs etch stop is one factor that limits the over etch which can be designed into the process. The most important factors to be considered in designing a selective etch process will be presented.

Wet etching of gold films compatible with highTcsuperconducting thin films

1991 ◽  
Vol 59 (13) ◽  
pp. 1632-1634 ◽  
Author(s):  
W. Eidelloth ◽  
R. L. Sandstrom
Keyword(s):  
Thin Films ◽  
Wet Etching ◽  
Gold Films

Chemical Reduction and Wet Etching of CeO[sub 2] Thin Films

2005 ◽  
Vol 152 (2) ◽  
pp. C65 ◽  
Author(s):  
A. Kossoy ◽  
M. Greenberg ◽  
K. Gartsman ◽  
I. Lubomirsky
Keyword(s):  
Thin Films ◽  
Chemical Reduction ◽  
Wet Etching
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