Sintered Silver Die Attach with Extreme Thermal Stability for Extreme and Dynamic Environments

2017 ◽  
Vol 2017 (HiTEN) ◽  
pp. 000168-000176 ◽  
Author(s):  
Khalid Khtatba ◽  
Seyed Amir Paknejad ◽  
Ali Mansourian ◽  
Samjid H. Mannan

Abstract: The surface oxidation of internal pore surfaces of nano-scale sintered silver has increased stability for high temperature applications. After treatment, high temperature storage at 400 °C has resulted in no changes to microstructure. By contrast, it is known that the microstructure of untreated pressure-less sintered silver continuously evolves at temperatures above 200 °C. Grain and pore growth occur in this temperature range for conventional sintered silver resulting in coarsening of the microstructure and increased susceptibility to fatigue. However, oxidation treatment of the internal pore surfaces has the effect of freezing the microstructure when the contact metallization is also silver or chemically inert. Oxidation prevents mass transfer by shutting down the fastest atomic migration route along the internal pore surfaces. Samples exhibited no change in microstructure either through continuous observation through glass, or after cross sectioning. The tested specimens under high temperature storage resisted grain growth for the whole duration of the tests of more than 600 h at 300 °C. The only detectable changes in microstructure occurred in a sparse number of isolated grains (1 in 7000 grains), presumably due to non-penetration of oxidising treatment into these closed pore spaces. It is hypothesized that even these can be prevented by minor changes to the sintering paste to slightly increase initial porosity. The oxidising treatment can be performed via many different routes, such as exposure to steam, or even by dipping in water for 10 min.

2015 ◽  
Vol 2015 (HiTEN) ◽  
pp. 000073-000082
Author(s):  
Jinzi Cui ◽  
R. Wayne Johnson ◽  
Michael C. Hamilton

Nickel is a commonly used diffusion barrier for direct bond copper (DBC) substrates used in high temperature, high power applications. The Ni can be deposited by electroless or electrolytic plating and may be pure Ni, Ni:P, Ni:B or Ni:Co. The reactivity of these different Ni layers with AuGe and BiAgX® solder is explored. Specifically the reaction to form Ni-Ge intermetallics and NiBi3 during high temperature storage and the impact on die shear strength and failure mode are discussed.


Author(s):  
J. Acki ◽  
A. Murakami ◽  
T. Akutsu ◽  
S. Matsuda ◽  
A. Maruyama ◽  
...  

Abstract RECENTLY POWER MOSFETS have been used for satellite power supplies. NASDA has developed such a Power MOSFET for the space projects. It has a metal-type package, and the die is attached by Au-Si alloy to achieve high temperature operation (Tj=200°C). The fabricated device failure was detected thermal resistance tests after high temperature storage test at 200°C for 1000 hours. This failure is caused by the die peeling between the Au-Si eutectic alloy layer and the Ni plating surface on the Cu-W substrate. In this paper, we describe the failure mechanism and improvements in the package design and fabrication process. The newly developed power MOSFET for space use exhibits good performance in the high temperature storage test.


2014 ◽  
Vol 2014 (HITEC) ◽  
pp. 000340-000346 ◽  
Author(s):  
Zhenzhen Shen ◽  
Wayne Johnson ◽  
Michael C. Hamilton

AgBiX™ (Indium Corporation) solder paste has a solidus temperature of ∼262°C after reflow, which is suitable for passive component, semiconductor and power die attach for 200°C applications. In this work, the paste has been used to assemble SiC die with Ti/Ni/Ag thin film metallization to Ag and PdAg thick film substrates. High temperature storage testing (200°C) was preformed to characterize the reliability of the assemblies. Surface mount chip resistors attached to thick film substrates were also subject to high temperature storage. Comparisons of the performance of die attach and resistor attach on Ag substrates and PdAg substrates are made. EDX and failure analysis was used to understand the role of Pd on the failure mode and lower aged shear strengths with the thick film PdAg conductors.


2012 ◽  
Vol 52 (9-10) ◽  
pp. 1966-1970 ◽  
Author(s):  
R. Pelzer ◽  
M. Nelhiebel ◽  
R. Zink ◽  
S. Wöhlert ◽  
A. Lassnig ◽  
...  

2014 ◽  
Vol 895 ◽  
pp. 567-570
Author(s):  
Azman Jalar ◽  
Wan Yusmawati Wan Yusoff ◽  
Norinsan Kamil Othman ◽  
Irman Abdul Rahman

Effect of gamma radiation (1.33 MeV) and high temperature storage of semiconductor package towards micromechanical properties has been investigated. The in-house fabricated Quad Flat No Lead was exposed to gamma radiation with the dose of 5 Gy. Afterwards, high temperature storage was performed at 150 °C for 10, 100 and 1000 hours. Subsequently, the three point bending technique was carried out to obtain the micromechanical properties of semiconductor package. The fracture of the packages caused by three point bending test was subjected to 3D CT scan to capture the image of the fracture. Irradiated package shows the decreasing in their strength with increasing doses of gamma radiation. However, the strength of the package was improved after high temperature storage for 10 hours and decreased as the storage period is extended. Further analysis exhibited that high temperature storage for 10 hours is reveal as good thermal treatment for package in radioactive environment application.


Sign in / Sign up

Export Citation Format

Share Document