Packaging of High Frequency, High Temperature Silicon Carbide (SiC) Multichip Power Module (MCPM) Bi-directional Battery Chargers for Next Generation Hybrid Electric Vehicles

2012 ◽  
Vol 2012 (1) ◽  
pp. 001105-001115 ◽  
Author(s):  
Z. Cole ◽  
B. Passmore ◽  
B. Whitaker ◽  
A. Barkley ◽  
T. McNutt ◽  
...  

The packaging design and development of an on-board bi-directional charger for the battery system of the next generation Toyota Prius plug-in hybrid electric vehicle (PHEV) will be presented in this paper. The charger implements a multichip power module (MCPM) packaging strategy. The Silicon Carbide (SiC) MCPM charger is capable of operating to temperatures in excess of 200°C and at switching frequencies in excess of 500 kHz, significantly reducing the overall size and weight of the system in comparison with Toyota's present silicon-based Prius charger. The present actively cooled Si charger is capable of delivering a peak power of 1kW at less than 90 percent efficiency, is limited to less than 50 kHz switching, and measures greater than 6.3 liters with a mass of 6.6 kg, resulting in a power density of 150 W/kg. The passively cooled SiC MCPM charger presented herein was designed to deliver a peak power of 5 kW at greater than 96% efficiency, while measuring less than 0.9 liters with a mass of 1 kg, resulting in a power density greater than 5 kW/kg. Thus, the novel SiC MCPM charger represents an increase in power density of more than 30×, a very significant power density achievement in size and weight for sensitive mobile applications such as PHEVs. This paper will discuss the overall mechanical design of the SiC MCPM charger, the finite-element modeling and analysis of thermal and stress considerations, characterization and parasitic analysis of the MCPM, and the development of high temperature solutions for SiC devices.

2015 ◽  
Vol 2015 (HiTEN) ◽  
pp. 000208-000213 ◽  
Author(s):  
Z. Cole ◽  
B. McGee ◽  
J. Stabach ◽  
C. B. O'Neal ◽  
B. Passmore

In this work, a compact 600 – 1700 V high current power package housing either silicon carbide (SiC) or gallium nitride (GaN) power die was designed and developed. Several notable configurations of the package include diode half-bridges, co-packed MOSFET-diode pairs, and cascode configured GaN devices. In order to avoid a significant redesign effort for each new application or improvement in device technology, a device-neutral design strategy enables the use of a variety of die types from any manufacturer depending on the end-use application's requirements. The basic SOT-227 is a widely used package type found in everything from electronic welders and power supplies to motor controls and inverters. This module is a variant of that style of package which also addresses some issues that a standard SOT-227 package has when used in higher voltage applications; it has increased creepage and clearance distances which meet IPC, UL, and IEC standards up to 1700 volts while retaining an isolated substrate. It also has low parasitic values in comparison to the SOT-227. One of the key elements of this design is the removal of the baseplate. This allows for far lower weight, volume, and cost as well as reduced manufacturing complexity. The wide bandgap power package is composed of high temperature capable materials, which allow for the high junction temperatures inherent in these high power density devices. This paves the way for the design of a small, low-profile package with low parasitic inductances and a small junction-to-case thermal resistance. This paper will discuss the mechanical design of the power package as well as the three-dimensional finite-element modeling and analysis of the thermal, electrical, and mechanical characteristics. In addition, the electrical characteristics as a function of temperature of the power module up to 225 °C will be presented.


Author(s):  
Mei-Chien Lu

Abstract Silicon carbide wide bandgap power electronics have gained application spaces in hybrid electric vehicle and electrical vehicles. The Department of Energy has set target performance goals for 2025 to promote electric vehicles and hybrid electric vehicles as a means of carbon emission reduction and long term sustainability. Silicon carbide technology is well suited to reach these goals. Challenges include higher expectations on power density, performance, efficiency, thermal management, compactness, cost, and reliability. This study will benchmark state of the art silicon and silicon carbide technologies. Power modules of commercial traction inverters are analyzed for their within-package interconnect scheme, module architecture, and cooling methods. A few power module package architectures from both industry adopted standards and proposed patented technologies are compared for modularity and scalability for integration into inverters. The within package interconnect schemes are crucial elements to support power module design. Current trends of power module architectures and their integration into inverter are discussed. The development of an eco-system to support the transition from silicon-based to silicon carbide-based power electronics is additionally discussed as an ongoing challenge.


RSC Advances ◽  
2016 ◽  
Vol 6 (40) ◽  
pp. 33959-33970 ◽  
Author(s):  
Jyh-Chien Chen ◽  
Jin-An Wu ◽  
Kuei-Hsien Chen

PEMFCs based on novel imidazolium-functionalized polyimides (ImPI-x)s demonstrate high OCVs and high peak power density with low PA uptakes. Microphase separation of ImPI-x can also be observed by AFM.


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