scholarly journals Surface Morphology and Characteristics of LiNbO3Single Crystal by Helicon Wave Plasma Etching

2003 ◽  
Vol 40 (9) ◽  
pp. 886-890
Keyword(s):  
Surface Morphology ◽  
Plasma Etching ◽  
Helicon Wave ◽  
Helicon Wave Plasma

Effects of Helicon-Wave-Plasma Etching on the Charging Damage of Aluminum Interconnects

1998 ◽  
Vol 37 (Part 1, No. 7A) ◽  
pp. 3867-3870
Author(s):  
Wendy Lin ◽  
Tzong-Kuei Kang ◽  
Yean-Chyi Perng ◽  
Bau-Tong Dai ◽  
Huang-Chung Cheng
Keyword(s):  
Plasma Etching ◽  
Helicon Wave ◽  
Aluminum Interconnects ◽  
Helicon Wave Plasma

Physical damage in silicon formed by helicon wave plasma etching

1993 ◽  
Vol 74 (9) ◽  
pp. 5402-5405 ◽  
Author(s):  
Tsutomu Tsukada ◽  
Hiroshi Nogami ◽  
Jun Hayashi ◽  
Kazu Kawaguchi ◽  
Tohru Hara
Keyword(s):  
Plasma Etching ◽  
Physical Damage ◽  
Helicon Wave ◽  
Helicon Wave Plasma

Damage Formed on Silicon Surface by Helicon Wave Plasma Etching

1993 ◽  
Vol 32 (Part 2, No. 4A) ◽  
pp. L536-L538 ◽  
Author(s):  
Tohru Hara ◽  
Kazu Kawaguchi ◽  
Jun Hayashi ◽  
Hiroshi Nogami ◽  
Tsutomu Tsukada
Keyword(s):  
Plasma Etching ◽  
Silicon Surface ◽  
Helicon Wave ◽  
Helicon Wave Plasma

Tailoring the surface morphology of carbon nanotube forests by plasma etching: a parametric study

Carbon ◽  
2021 ◽  
Author(s):  
Seungju Seo ◽  
Sanha Kim ◽  
Shun Yamamoto ◽  
Kehang Cui ◽  
Takashi Kodama ◽  
...  
Keyword(s):  
Carbon Nanotube ◽  
Surface Morphology ◽  
Plasma Etching ◽  
Parametric Study ◽  
Carbon Nanotube Forests

A Chemical Perspective of GaN Polarity: The use of Hydrogen Plasma Dry Etching Versus NaOH Wet Etching to Determine Polarity

2002 ◽  
Vol 722 ◽  
Author(s):  
Maria Losurdo ◽  
MariaMichela Giangregorio ◽  
Pio Capezzuto ◽  
Giovanni Bruno ◽  
Gon Namkoong ◽  
...  
Keyword(s):  
Surface Morphology ◽  
Plasma Etching ◽  
Hydrogen Plasma ◽  
Dry Etching ◽  
Surface Reactivity ◽  
Wet Etching ◽  
Hydrogen Treatment

AbstractThe use of dry hydrogen plasma etching is evaluated for determination of GaN polarity and critically compared to wet etching in NaOH. It is shown that hydrogen plasma etching is effective in revealing inversion domains (IDs) and some types of dislocations. This is because the surface morphology is unchanged by the hydrogen treatment, and, hence, the surface reactivity is not masked.

Etching characteristics in helicon wave plasma

1993 ◽  
Vol 2 (1) ◽  
pp. 11-13 ◽  
Author(s):  
H Kitagawa ◽  
A Tsunoda ◽  
H Shindo ◽  
Y Horiike
Keyword(s):  
Helicon Wave ◽  
Helicon Wave Plasma

Low Energy Bias Sputtering Filling of SiO2 into High Aspect Ratio Trench Employing Axially Confined Helicon Wave Plasma

1994 ◽  
Author(s):  
G. Sadakuni ◽  
Y. Kobayashi ◽  
H. Shindo ◽  
T. Fukazawa ◽  
H. Sakaue ◽  
...  
Keyword(s):  
Aspect Ratio ◽  
High Aspect Ratio ◽  
Low Energy ◽  
Helicon Wave ◽  
Helicon Wave Plasma
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