Physical damage in silicon formed by helicon wave plasma etching

1993 ◽  
Vol 74 (9) ◽  
pp. 5402-5405 ◽  
Author(s):  
Tsutomu Tsukada ◽  
Hiroshi Nogami ◽  
Jun Hayashi ◽  
Kazu Kawaguchi ◽  
Tohru Hara
Keyword(s):  
Plasma Etching ◽  
Physical Damage ◽  
Helicon Wave ◽  
Helicon Wave Plasma

Effects of Helicon-Wave-Plasma Etching on the Charging Damage of Aluminum Interconnects

1998 ◽  
Vol 37 (Part 1, No. 7A) ◽  
pp. 3867-3870
Author(s):  
Wendy Lin ◽  
Tzong-Kuei Kang ◽  
Yean-Chyi Perng ◽  
Bau-Tong Dai ◽  
Huang-Chung Cheng
Keyword(s):  
Plasma Etching ◽  
Helicon Wave ◽  
Aluminum Interconnects ◽  
Helicon Wave Plasma

Damage Formed on Silicon Surface by Helicon Wave Plasma Etching

1993 ◽  
Vol 32 (Part 2, No. 4A) ◽  
pp. L536-L538 ◽  
Author(s):  
Tohru Hara ◽  
Kazu Kawaguchi ◽  
Jun Hayashi ◽  
Hiroshi Nogami ◽  
Tsutomu Tsukada
Keyword(s):  
Plasma Etching ◽  
Silicon Surface ◽  
Helicon Wave ◽  
Helicon Wave Plasma

scholarly journals Contamination Particle Behavior of Aerosol Deposited Y2O3 and YF3 Coatings under NF3 Plasma

Coatings ◽  
2019 ◽  
Vol 9 (5) ◽  
pp. 310 ◽  
Author(s):  
Je-Boem Song ◽  
Eunmi Choi ◽  
Seong-Geun Oh ◽  
Jin-Tae Kim ◽  
Ju-Young Yun
Keyword(s):  
Plasma Etching ◽  
Photoelectron Spectroscopy ◽  
Protective Coatings ◽  
Etching Rate ◽  
Physical Damage ◽  
Plasma Damage ◽  
Coating Materials ◽  
Zero Bias ◽  
Aerosol Deposition Method ◽  
Y2o3 Coating

The internal coatings of chambers exposed to plasma over a long period of time are subject to chemical and physical damage. Contamination particles that are produced by plasma damage to coatings are a major contribution to poor process reliability. In this study, we investigated the behavior of contamination particles produced from plasma damage to Y2O3 and YF3 protective coatings, which were applied by an aerosol deposition method. The coating materials were located at the powered electrode, the grounded electrode, and the grounded wall, which were exposed to a NF3 plasma. The mass loss at the powered electrode, which was exposed to the NF3 plasma etching under an applied bias, showed that the YF3 etching rate was higher than that of Y2O3. Conversely, the mass of coating increased at the grounded electrode and the grounded wall, which were exposed to NF3 plasma etching under zero bias. The mass of the Y2O3 coating increased more than that of the YF3 coating. X-ray photoelectron spectroscopy analysis showed that the Y2O3 coating corroded to YOxFy in the NF3 plasma, and YF3 existed as YFx. Light scattering sensor analysis showed that the YF3 coating produced fewer contamination particles than did the Y2O3 coating.

Etching characteristics in helicon wave plasma

1993 ◽  
Vol 2 (1) ◽  
pp. 11-13 ◽  
Author(s):  
H Kitagawa ◽  
A Tsunoda ◽  
H Shindo ◽  
Y Horiike
Keyword(s):  
Helicon Wave ◽  
Helicon Wave Plasma

Low Energy Bias Sputtering Filling of SiO2 into High Aspect Ratio Trench Employing Axially Confined Helicon Wave Plasma

1994 ◽  
Author(s):  
G. Sadakuni ◽  
Y. Kobayashi ◽  
H. Shindo ◽  
T. Fukazawa ◽  
H. Sakaue ◽  
...  
Keyword(s):  
Aspect Ratio ◽  
High Aspect Ratio ◽  
Low Energy ◽  
Helicon Wave ◽  
Helicon Wave Plasma

High growth-rate fabrication of micro-crystalline silicon by Helicon wave plasma CVD

2001 ◽  
Vol 66 (1-4) ◽  
pp. 283-288 ◽  
Author(s):  
Koji Endo ◽  
Masao Isomura ◽  
Mikio Taguchi ◽  
Hisaki Tarui ◽  
Seiichi Kiyama
Keyword(s):  
Growth Rate ◽  
Crystalline Silicon ◽  
High Growth ◽  
High Growth Rate ◽  
Plasma Cvd ◽  
Helicon Wave ◽  
Helicon Wave Plasma
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