scholarly journals Impacts of Process and Design Parameters on the Electrical Characteristics of High-Voltage DMOSFETs

2021 ◽  
Vol 11 (2) ◽  
pp. 492
Author(s):  
Levente Rácz ◽  
Bálint Németh

Exceeding the electric field’s limit value is not allowed in the vicinity of high-voltage power lines because of both legal and safety aspects. The design parameters of the line must be chosen so that such cases do not occur. However, analysis of several operating power lines in Europe found that the electric field strength in many cases exceeds the legally prescribed limit for the general public. To illustrate this issue and its importance, field measurement and finite element simulation results of the low-frequency electric field are presented for an active 400 kV power line. The purpose of this paper is to offer a new, economical expert system based on dynamic line rating (DLR) that utilizes the potential of real-time power line monitoring methods. The article describes the expert system’s strengths and benefits from both technical and financial points of view, highlighting DLR’s potential for application. With our proposed expert system, it is possible to increase a power line’s safety and security by ensuring that the electric field does not exceed its limit value. In this way, the authors demonstrate that DLR has other potential applications in addition to its capacity-increasing effect in the high voltage grid.


2017 ◽  
Vol 897 ◽  
pp. 545-548 ◽  
Author(s):  
Sauvik Chowdhury ◽  
Collin W. Hitchcock ◽  
T. Paul Chow

We present a comparative study of the electrical characteristics of different 1200V commercial SiC power MOSFETs at cryogenic temperatures down to 77 K. As compared to conventional silicon power MOSFETs, SiC MOSFETs show very different operating characteristics at low temperatures which is due to unique material and design parameters used in SiC MOSFETs. Of particular interest is a non-linear mixed triode/pentode-like I-V characteristic exhibited by all SiC MOSFETs at 77 K, which is demonstrated to be due to short channel effects in the constituent JFET.


1980 ◽  
Vol 19 (S1) ◽  
pp. 545 ◽  
Author(s):  
Hiroaki Okamoto ◽  
Yoshiteru Nitta ◽  
Yoshihiro Hamakawa

2001 ◽  
Vol 48 (8) ◽  
pp. 1498-1502 ◽  
Author(s):  
B.S. Shelton ◽  
Ting Gang Zhu ◽  
D.J.H. Lambert ◽  
R.D. Dupuis

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