Comparative Evaluation of Commercial 1200 V SiC Power MOSFETs Using Diagnostic I-V Characterization at Cryogenic Temperatures
2017 ◽
Vol 897
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pp. 545-548
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Keyword(s):
We present a comparative study of the electrical characteristics of different 1200V commercial SiC power MOSFETs at cryogenic temperatures down to 77 K. As compared to conventional silicon power MOSFETs, SiC MOSFETs show very different operating characteristics at low temperatures which is due to unique material and design parameters used in SiC MOSFETs. Of particular interest is a non-linear mixed triode/pentode-like I-V characteristic exhibited by all SiC MOSFETs at 77 K, which is demonstrated to be due to short channel effects in the constituent JFET.
Keyword(s):
2009 ◽
Vol 44
(1)
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pp. 280-284
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2007 ◽
Vol 54
(8)
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pp. 1943-1952
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Keyword(s):
1989 ◽
Vol 36
(3)
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pp. 522-528
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2018 ◽
Vol 1034
◽
pp. 012003
Keyword(s):
Keyword(s):
2001 ◽
Vol 82
(1-3)
◽
pp. 238-240
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