Analysis of the electrical characteristics of power LDMOSFETs having different design parameters under various temperature

2007 ◽  
Vol 38 (10-11) ◽  
pp. 1027-1033 ◽  
Author(s):  
Yong-Seo Koo
Keyword(s):  
Design Parameters ◽  
Electrical Characteristics

Comparative Evaluation of Commercial 1200 V SiC Power MOSFETs Using Diagnostic I-V Characterization at Cryogenic Temperatures

2017 ◽  
Vol 897 ◽  
pp. 545-548 ◽  
Author(s):  
Sauvik Chowdhury ◽  
Collin W. Hitchcock ◽  
T. Paul Chow
Keyword(s):  
Comparative Evaluation ◽  
Design Parameters ◽  
Electrical Characteristics ◽  
Cryogenic Temperatures ◽  
Short Channel Effects ◽  
Operating Characteristics ◽  
Short Channel ◽  
Power Mosfets ◽  
Unique Material ◽  
Channel Effects

We present a comparative study of the electrical characteristics of different 1200V commercial SiC power MOSFETs at cryogenic temperatures down to 77 K. As compared to conventional silicon power MOSFETs, SiC MOSFETs show very different operating characteristics at low temperatures which is due to unique material and design parameters used in SiC MOSFETs. Of particular interest is a non-linear mixed triode/pentode-like I-V characteristic exhibited by all SiC MOSFETs at 77 K, which is demonstrated to be due to short channel effects in the constituent JFET.

scholarly journals DEVELOPMENT AND MODELLING OF HIGH SPREAD CONDUCTIVITY EARTH ELECTRODES FOR COMPLEX EARTHING ARRANGEMENTS

2021 ◽  
pp. 16-22
Author(s):  
Vyacheslav Balalaiev ◽  
Olena Fedoseenko
Keyword(s):  
Reference Model ◽  
Layer Structure ◽  
Potential Method ◽  
Equivalent Model ◽  
Design Parameters ◽  
Electrical Characteristics ◽  
Electric Circuits ◽  
Distributed Parameters ◽  
Normalized Parameters ◽  
Earth Electrode

The analysis of methods for calculating the electrical characteristics of earth electrodes in case of emergency currents of industrial frequency flowing through the elements of earthing arrangements is carried out. A method for improving complex earthing arrangements of electrical installations by optimization of their design parameters is proposed. The proposed method consists in installing an artificial earth electrode with an increased contact area of its surface with the ground, which makes it possible to increase the conductivity of earthing spreading. The use of these electrodes on the territory of projected or operating electrical installations ensures that the values of the normalized parameters of earthing arrangements are brought to permissible values. The use of the method given in the calculations of earthing arrangements requires the replacement of volumetric earth electrodes with a set of linear vertical electrodes. The design model is substantiated by equivalent electrical characteristics relative to the two-layer model of the electrical structure of the earth. The equivalent model was obtained by a given approximation of the electrical characteristics of a set of straight electrodes in the process of increasing their number to the equivalent characteristics of the reference model. In turn, the determination of the characteristics of the reference model was carried out directly by solving the boundary value problem for the potential satisfying Laplace equation using finite difference method. Theoretical investigations using induced potential method and methods of calculation of branched electric circuits with distributed parameters for calculation of electric field and resistance of the complex non-equipotential earth electrode in the ground with two-layer structure have been carried out. The developed electrodes of increased spread conductivity are mounted as experimental samples and are involved in the formation of the electrical characteristics of the earthing arrangements.

Study of the optimization of embroidery design parameters for the Technical Embroidery Machine: derivation of the correlation between thread consumption and electrical resistance

2021 ◽  
pp. 004051752110610
Author(s):  
Soo Hyeon Rho ◽  
Suhyun Lee ◽  
Wonyoung Jeong ◽  
Dae-Young Lim
Keyword(s):  
Textile Industry ◽  
Equivalent Circuit Model ◽  
Data Communication ◽  
Design Parameters ◽  
Electrical Characteristics ◽  
Smart Textile ◽  
Conductive Line ◽  
The Given ◽  
Line Resistance ◽  
Textile Products

The smart textile industry has become increasingly interested in textile products with electronic functions. In these smart textile products, sensing and data communication are conducted through conductive circuits by conductive threads. In embroidery technology that uses conductive threads as the material for the conductive line as a circuit, their resistance is an important factor when designing a product. The main purpose of this study was to derive an equivalent circuit model and a calculation equation for the consumption of conductive threads according to the embroidery design parameters. The effects of the embroidery design parameters on the appearance and electrical characteristics of the conductive line were also analyzed. The appearance and electrical characteristics of the embroidered conductive line were different when the embroidery design parameters were not the same. The calculation equation for the consumption of conductive threads could establish a quantitative system that could indicate the line resistance of an embroidered conductive line using the embroidery design parameters and the given thread resistance.

scholarly journals Analysis of the probabilistic characteristics of the electrical parameters of a broadband balanced mixer of microwave radio signals based on resonant tunneling diodes and an assessment of its reliability

2021 ◽  
Vol 13 (1) ◽  
pp. 19-26
Author(s):  
Kirill V. Cherkasov ◽  
◽  
Ivan A. Romanov ◽  
Sergey A. Meshkov ◽  
Vasily D. Shashurin ◽  
...  
Keyword(s):  
Resonant Tunneling ◽  
Design Parameters ◽  
Resonant Tunneling Diodes ◽  
Electrical Characteristics ◽  
Tunneling Diodes ◽  
Destabilizing Factors ◽  
Microwave Radio ◽  
Radio Signals ◽  
Linear Elements ◽  
Kinetics Of

The object of research is the broadband balanced SHF mixer (BM) based on resonant-tunneling diodes (RTDs). The research goals are to perform the statistical analysis of BMs design parameters technological errors impact on its electrical characteristics scatter, and to analyze the kinetics of these characteristics under the destabilizing factors influence. The ranging of BMs design parameters technological errors impacts on its electrical characteristics scatter revealed that the biggest impact is made by the technological errors of the BMs non-linear elements I-V characteristics. The BMs reliability study revealed that to ensure the studied BMs reliability during operation under high temperatures impact the design and technological optimization of the BMs electrical characteristics is required.

In situ TEM measurements of the electrical properties of interface dislocations

1992 ◽  
Vol 50 (2) ◽  
pp. 1338-1339
Author(s):  
F. M. Ross ◽  
R. Hull ◽  
D. Bahnck ◽  
J. C. Bean ◽  
L. J. Peticolas ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Electronic Device ◽  
In Situ Tem ◽  
Device Performance ◽  
Misfit Dislocations ◽  
Electrical Characteristics ◽  
Strained Layer ◽  
Transmission Electron ◽  
Interfacial Dislocations

We describe an investigation of the electrical properties of interfacial dislocations in strained layer heterostructures. We have been measuring both the structural and electrical characteristics of strained layer p-n junction diodes simultaneously in a transmission electron microscope, enabling us to correlate changes in the electrical characteristics of a device with the formation of dislocations.The presence of dislocations within an electronic device is known to degrade the device performance. This degradation is of increasing significance in the design and processing of novel strained layer devices which may require layer thicknesses above the critical thickness (hc), where it is energetically favourable for the layers to relax by the formation of misfit dislocations at the strained interfaces. In order to quantify how device performance is affected when relaxation occurs we have therefore been investigating the electrical properties of dislocations at the p-n junction in Si/GeSi diodes.

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