Influence of Nitrogen Plasma Treatment on Low Temperature Deposited Silicon Nitride Thin Film for Flexible Display

Results of the formation of superhard coatings in the low-temperature nitrogen plasma treatment process in the open atmosphere of titanium films on sapphire substrates are given. It is shown that during plasma treatment a coating of nitrogen-containing TiO2 with rutile structure is formed with a double increase (in comparison with rutile TiO2) of microhardness (up to 27 GPa). The application of this coating leads to hardening of the surface of sapphire plates by 22-23%. High productivity and implementation of synthesis in an open atmosphere make it possible to consider the proposed procedure is promising for the production of superhard coatings with high resistance to oxygen.

Download Full-text

Enhancement of Thermal Stability of Sputtered Nanoporous Pt Thin Film Using Oxygen Plasma Treatment in Low Temperature Solid Oxide Fuel Cells

ECS Meeting Abstracts ◽

10.1149/ma2016-02/39/2894 ◽

2016 ◽

Keyword(s):

Thin Film ◽

Thermal Stability ◽

Low Temperature ◽

Solid Oxide Fuel Cells ◽

Plasma Treatment ◽

Oxygen Plasma ◽

Solid Oxide ◽

Oxygen Plasma Treatment ◽

Oxide Fuel ◽

Thermal Stability Of

Download Full-text

Impact of Silicon Nitride Gate Dielectric Composition on the Stability of Low Temperature Nanocrystalline Silicon Thin Film Transistors

ECS Transactions ◽

10.1149/1.3572276 ◽

2019 ◽

Vol 35 (4) ◽

pp. 73-79

Author(s):

Mohammad Esmaeili-Rad ◽

Gholamreza Chaji ◽

Flora Li ◽

Maryam Moradi ◽

Andrei Sazonov ◽

...

Keyword(s):

Thin Film ◽

Silicon Nitride ◽

Low Temperature ◽

Thin Film Transistors ◽

Gate Dielectric ◽

Nanocrystalline Silicon ◽

Silicon Thin Film ◽

The Stability

Download Full-text

Low-temperature silicon nitride for thin-film electronics on polyimide foil substrates

Applied Surface Science ◽

10.1016/s0169-4332(01)00050-2 ◽

2001 ◽

Vol 175-176 ◽

pp. 12-16 ◽

Cited By ~ 44

Author(s):

H. Gleskova ◽

S. Wagner ◽

V. Gašparı́k ◽

P. Kováč

Keyword(s):

Thin Film ◽

Silicon Nitride ◽

Low Temperature ◽

Polyimide Foil ◽

Thin Film Electronics

Download Full-text

Reaction Processes for Low Temperature (<150°C) Plasma Enhanced Deposition of Hydrogenated Amorphous Silicon Thin-Film Transistors on Transparent Plastic Substrates

MRS Proceedings ◽

10.1557/proc-508-19 ◽

1998 ◽

Vol 508 ◽

Cited By ~ 9

Author(s):

Gregory N. Parsons ◽

Chien-Sheng Yang ◽

Tonya M. Klein ◽

Laura Smith

Keyword(s):

Thin Film ◽

Silicon Nitride ◽

Low Temperature ◽

Amorphous Silicon ◽

Charge Trapping ◽

Rf Plasma ◽

Processing Temperature ◽

Silicon Thin Film ◽

Transparent Plastic ◽

Plastic Substrates

AbstractThis article presents mechanisms for low temperature (<150°C) rf plasma enhanced chemical vapor deposition of silicon and silicon nitride thin films that lead to sufficient electronic quality for thin film transistor (TFT) fabrication and operation. For silicon deposition, hydrogen abstraction and etching, and silicon disproportionation reactions are identified that can lead to optimized hydrogen concentration and bonding environments at <150°C. Nitrogen dilution of SiH4/NH3 mixtures during silicon nitride deposition at low temperatures helps promote N-H bonding, leading to reduced charge trapping. Good quality amorphous silicon TFT's fabricated with a maximum processing temperature of 110 °C are demonstrated on flexible transparent plastic substrates. Transistors formed with the same process on glass and plastic show linear mobilities of 0.33 and 0.12 cm2/Vs, respectively, with ION/IOFF ratios > 106.

Download Full-text