scholarly journals Формирование сверхтвердых покрытий в процессе обработки низкотемпературной плазмой азота в открытой атмосфере пленок титана

2021 ◽  
Vol 47 (9) ◽  
pp. 44
Author(s):  
М.Х. Гаджиев ◽  
Р.М. Эмиров ◽  
А.Э. Муслимов ◽  
М.Г. Исмаилов ◽  
В.М. Каневский
Keyword(s):  
Low Temperature ◽  
Plasma Treatment ◽  
High Resistance ◽  
Treatment Process ◽  
Nitrogen Plasma ◽  
Rutile Structure ◽  
Open Atmosphere ◽  
High Productivity ◽  
Sapphire Substrates ◽  
Superhard Coatings

Results of the formation of superhard coatings in the low-temperature nitrogen plasma treatment process in the open atmosphere of titanium films on sapphire substrates are given. It is shown that during plasma treatment a coating of nitrogen-containing TiO2 with rutile structure is formed with a double increase (in comparison with rutile TiO2) of microhardness (up to 27 GPa). The application of this coating leads to hardening of the surface of sapphire plates by 22-23%. High productivity and implementation of synthesis in an open atmosphere make it possible to consider the proposed procedure is promising for the production of superhard coatings with high resistance to oxygen.

Nitrogen Plasma Pretreatment of Sapphire Substrates for the GaN Buffer Growth by Remote Plasma Enhanced MOCVD

1996 ◽  
Vol 449 ◽  
Author(s):  
Min Hong Kim ◽  
Cheolsoo Sone ◽  
Jae Hyung Yi ◽  
Soun Ok Heur ◽  
Euijoon Yoon
Keyword(s):  
Low Temperature ◽  
Vapor Deposition ◽  
Nitrogen Plasma ◽  
Layer Growth ◽  
Buffer Layers ◽  
Rf Power ◽  
Remote Plasma ◽  
Sapphire Substrates ◽  
Nucleation Sites ◽  
Plasma Pretreatment

ABSTRACTLow-temperature GaN buffer layers with smooth surfaces and high crystallinity could be prepared by a remote plasma enhanced metalorganic vapor deposition after the pretreatment of substrates with rf nitrogen plasma. Smooth AIN thin layer was formed on the (0001) sapphire substrate by the nitrogen plasma pretreatment for an hour. The AIN layer provided the nucleation sites for the subsequent buffer layer growth, thus highly preferred (0001) GaN buffer layers could be grown on the pretreated substrate. Formation of the AIN layer on sapphire and the surface smoothness were affected by pretreatment parameters such as exposure time, temperature, and rf power.

Low-Temperature Metalorganic Chemical Vapor Deposition of Gallium Nitride on (0001) Sapphire Substrates Using a Remote rf Nitrogen Plasma

1996 ◽  
Vol 449 ◽  
Author(s):  
Cheolsoo Sone ◽  
Min Hong Kim ◽  
Jae Hyung Yi ◽  
Soun Ok Heur ◽  
Euijoon Yoon
Keyword(s):  
Chemical Vapor Deposition ◽  
Low Temperature ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Nitrogen Plasma ◽  
Structural Quality ◽  
Organic Chemical ◽  
Rf Power ◽  
Sapphire Substrates ◽  
Metal Organic

ABSTRACTWe report the low-temperature growth of GaN layers on (0001) sapphire substrates by a remote plasma enhanced metal-organic chemical vapor deposition in the temperature range of 500 - 800 $C. Effects of process parameters on the growth of GaN were studied. The structural quality of GaN improved as the growth temperature increased and the rf power decreased. Highly oriented GaN layers could be deposited at fairly low temperatures such as 500 $C under low rf power with low growth rate conditions.

Low Temperature Synthesis of Ultrafine Al2TiO5 Powders by Hydrolytic Sol-Gel Method

2016 ◽  
Vol 848 ◽  
pp. 324-327 ◽  
Author(s):  
Quan Zhang ◽  
Wei Hui Jiang ◽  
Jian Min Liu ◽  
Guo Feng ◽  
Gui Rong Xu
Keyword(s):  
Low Temperature ◽  
Treatment Process ◽  
Sol Gel ◽  
Filling Ratio ◽  
Aluminum Nitrate ◽  
Low Temperature Synthesis ◽  
Temperature Synthesis ◽  
Soaking Time ◽  
High Productivity ◽  
Productivity Ratio

Aluminum titanate (AT) ultrafine powder with high productivity ratio was prepared via hydrolytic sol-gel (HSG) method at 1250 °C, using aluminum nitrate (Al (NO3)3·9H2O) and titanium tetrachloride (TiCl4) as precursors, ethanol as solvent through solvothermal treatment process. Water required for hydrolysis reaction was supplied by the crystal water of aluminum nitrate itself. The effect of process parameters including filling ratio, solvothermal temperature and soaking time on the synthesis of AT powder was investigated by means of X-ray diffraction (XRD) and scanning electron microscopy (SEM). The cause of low temperature synthesis of AT was investigated. The result showed that excessive or insufficient filling ratio, too high or low solvothermal temperature, too long soaking time was not beneficial for the preparation of AT. The optimized ultrafine AT powder appeared at the decomposition temperature of 1250 °C with average particle size less than 1μm at a relatively high productivity ratio of 98 % with filling ratios of 60 %, solvothermal temperatures of 130 °C and soaking time of 30 min. The refinement of particles in the AT xerogel through solvothermal treatment process, and increasing reactivity of precursor, plays the key role in the low temperature synthesis of AT.

Microstructure and electrochemical properties of the vanadium alloys after low-temperature nitrogen plasma treatment

2020 ◽  
Vol 1 (102) ◽  
pp. 5-12
Author(s):  
Z.A. Duriagina ◽  
D.D. Ryzhak ◽  
V.V. Kulyk ◽  
T.L. Tepla ◽  
I.A. Lemishka ◽  
...  
Keyword(s):  
Electrochemical Impedance Spectroscopy ◽  
Impedance Spectroscopy ◽  
Low Temperature ◽  
Surface Treatment ◽  
Electrochemical Properties ◽  
Plasma Treatment ◽  
Electrochemical Impedance ◽  
Nitrogen Plasma ◽  
Surface Layers ◽  
Vanadium Alloys

Purpose: The proposed research aims to determine the expediency of surface treatment of vanadium alloys of V-Cr and V-Ti systems due to irradiation of their surfaces with low- temperature nitrogen plasma using plasma torch NO-01. Design/methodology/approach: The investigation of microstructure and X-ray fluorescence analysis (XRF) of the samples were performed using an electron microscope TESCAN Vega3. The microhardness (Vickers hardness) of the samples was measured before and after surface treatment. The study of corrosive properties of the surface layers was performed by an electrochemical impedance spectroscopy (EIS) method. Corrosion damages were identified using impedance dependences. Findings: The microstructure of the surface layers of the V-8Ti, V-15Cr, and V-35Cr alloys in the initial state and after plasma treatment have been investigated. The chemical composition of the surface layers is determined and comparative measurements of the microhardness of these alloys are carried out. Corrosion-electrochemical properties (corrosion potentials, electrochemical impedance spectroscopy and constructed potential-dynamic polarization curves) of investigated alloys after treatment with nitrogen plasma are evaluated. Research limitations/implications: The results obtained using laboratory samples should be checked at the conditions of power equipment operation. Practical implications: This treatment has advantages over other methods of surface engineering since it provides strong surface plastic deformation and the possibility of formation of secondary phases resulting in increases in surface hardness and corrosion resistance. Originality/value: Vanadium alloys have significant advantages over other structural materials due to their high thermal conductivity and swelling resistance, high strength and plasticity up to temperatures of 700-800°C, and good weldability.

AISI TYPE 302

Alloy Digest ◽  
1988 ◽  
Vol 37 (9) ◽  
Keyword(s):  
Fracture Toughness ◽  
Stainless Steel ◽  
Corrosion Resistance ◽  
Low Temperature ◽  
High Resistance ◽  
Heat Treating ◽  
General Purpose ◽  
Steel Mills ◽  
Temperature Performance ◽  
Aisi Type

Abstract AISI Type 302 is a general purpose austenitic chromium-nickel stainless steel. It has high resistance to corrosion and heat. This datasheet provides information on composition, physical properties, hardness, elasticity, and tensile properties as well as fracture toughness and creep. It also includes information on low temperature performance and corrosion resistance as well as forming, heat treating, machining, and joining. Filing Code: SS-99. Producer or source: Stainless steel mills. Originally published January 1960, revised September 1988.

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