scholarly journals Direct Current (DC) Bias Stress Characteristics of a Bottom-Gate Thin-Film Transistor with an Amorphous/Microcrystalline Si Double Layer

2011 ◽  
Vol 12 (5) ◽  
pp. 197-199
Author(s):  
Tae-Hoon Jeong ◽  
Si-Joon Kim ◽  
Hyun-Jae Kim
Keyword(s):  
Thin Film ◽  
Double Layer ◽  
Direct Current ◽  
Thin Film Transistor ◽  
Bias Stress ◽  
Dc Bias ◽  
Bottom Gate

Bias Stress Stability of Electric-double-layer ZnO Thin-film Transistor

2022 ◽  
Vol 43 (01) ◽  
pp. 129-136
Author(s):  
Cong WANG ◽  
◽  
Yu-rong LIU ◽  
Qiang PENG ◽  
He HUANG ◽  
...  
Keyword(s):  
Thin Film ◽  
Double Layer ◽  
Electric Double Layer ◽  
Thin Film Transistor ◽  
Zno Thin Film ◽  
Bias Stress

scholarly journals ZnO Thin-Film Transistor Grown by rf Sputtering Using Carbon Dioxide and Substrate Bias Modulation

2014 ◽  
Vol 2014 ◽  
pp. 1-7 ◽  
Author(s):  
Junghwan Kim ◽  
Jun Meng ◽  
Donghoon Lee ◽  
Meng Yu ◽  
Dukyean Yoo ◽  
...  
Keyword(s):  
Thin Film ◽  
Carbon Dioxide ◽  
Thin Film Transistor ◽  
Rf Sputtering ◽  
Rf Magnetron Sputtering ◽  
Substrate Bias ◽  
Zno Thin Film ◽  
The Poor ◽  
Dc Bias ◽  
Bottom Gate

ZnO thin-film transistor (TFT) grown by rf magnetron sputtering in Ar/O2atmosphere shows inferior turn-off characteristics compared to ZnO TFT grown by other methods. We thought that reactions between Zn and O2might produce defects responsible for the poor turn-off behavior. In order to solve this problem, we studied sputtering growth in Ar/CO2atmosphere at 450°C. During sputtering growth, we modulated substrate dc bias to control ion supply to the substrate. After growth ZnO was annealed in CO2and O2gas. With these methods, our bottom-gate ZnO thin-film transistor showed 4.7 cm2/Vsec mobility,4×106on/off ratio, and –2 V threshold voltage.

scholarly journals Effect of top gate potential on bias-stress for dual gate amorphous indium-gallium-zinc-oxide thin film transistor

AIP Advances ◽  
2016 ◽  
Vol 6 (7) ◽  
pp. 075217 ◽  
Author(s):  
Minkyu Chun ◽  
Jae Gwang Um ◽  
Min Sang Park ◽  
Md Delwar Hossain Chowdhury ◽  
Jin Jang
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Thin Film Transistor ◽  
Oxide Thin Film ◽  
Indium Gallium Zinc Oxide ◽  
Zinc Oxide Thin Film ◽  
Bias Stress ◽  
Dual Gate ◽  
Gate Potential ◽  
Indium Gallium

Investigating the degradation behavior caused by charge trapping effect under DC and AC gate-bias stress for InGaZnO thin film transistor

2011 ◽  
Vol 99 (2) ◽  
pp. 022104 ◽  
Author(s):  
Te-Chih Chen ◽  
Ting-Chang Chang ◽  
Tien-Yu Hsieh ◽  
Wei-Siang Lu ◽  
Fu-Yen Jian ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistor ◽  
Charge Trapping ◽  
Gate Bias ◽  
Degradation Behavior ◽  
Bias Stress ◽  
Trapping Effect ◽  
Gate Bias Stress

scholarly journals Negative threshold voltage shift in an a-IGZO thin film transistor under X-ray irradiation

RSC Advances ◽  
2019 ◽  
Vol 9 (36) ◽  
pp. 20865-20870 ◽  
Author(s):  
Dong-Gyu Kim ◽  
Jong-Un Kim ◽  
Jun-Sun Lee ◽  
Kwon-Shik Park ◽  
Youn-Gyoung Chang ◽  
...  
Keyword(s):  
Thin Film ◽  
Threshold Voltage ◽  
Thin Film Transistor ◽  
Threshold Voltage Shift ◽  
Voltage Shift ◽  
Hydrogen Incorporation ◽  
X Ray ◽  
Spectroscopic Analyses ◽  
Bottom Gate ◽  
Igzo Tft

We studied the effect of X-ray irradiation on the negative threshold voltage shift of bottom-gate a-IGZO TFT. Based on spectroscopic analyses, we found that this behavior was caused by hydrogen incorporation and oxygen vacancy ionization.

scholarly journals Self-Assembled Monolayers (SAMs)/Al2O3 Double Layer Passivated InSnZnO Thin-Film Transistor

IEEE Access ◽  
2020 ◽  
Vol 8 ◽  
pp. 101834-101839
Author(s):  
Wei Zhong ◽  
Ruohe Yao ◽  
Zhijian Chen ◽  
Linfeng Lan ◽  
Rongsheng Chen
Keyword(s):  
Thin Film ◽  
Double Layer ◽  
Thin Film Transistor ◽  
Self Assembled Monolayers ◽  
Assembled Monolayers ◽  
Self Assembled
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