scholarly journals Optoelectronic Properties of Sol-gel Processed SnO2 Thin Film Transistors

2020 ◽  
Vol 29 (5) ◽  
pp. 328-331
Author(s):  
Changmin Lee ◽  
Jaewon Jang
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Sol Gel ◽  
Optoelectronic Properties ◽  
Sno2 Thin Film

scholarly journals Improved Negative Bias Stress Stability of Sol–Gel-Processed Li-Doped SnO2 Thin-Film Transistors

Electronics ◽  
2021 ◽  
Vol 10 (14) ◽  
pp. 1629
Author(s):  
Hyeon-Joong Kim ◽  
Do-Won Kim ◽  
Won-Yong Lee ◽  
Sin-Hyung Lee ◽  
Jin-Hyuk Bae ◽  
...  
Keyword(s):  
Thin Film ◽  
Oxygen Vacancy ◽  
Thin Film Transistors ◽  
Sol Gel ◽  
Sno2 Thin Film ◽  
Negative Bias ◽  
Semiconductor Films ◽  
Saturation Regime ◽  
Si Substrates ◽  
Ionic Size

In this study, sol–gel-processed Li-doped SnO2-based thin-film transistors (TFTs) were fabricated on SiO2/p+ Si substrates. The influence of Li dopant (wt%) on the structural, chemical, optical, and electrical characteristics was investigated. By adding 0.5 wt% Li dopant, the oxygen vacancy formation process was successfully suppressed. Its smaller ionic size and strong bonding strength made it possible for Li to work as an oxygen vacancy suppressor. The fabricated TFTs consisting of 0.5 wt% Li-doped SnO2 semiconductor films delivered the field-effect mobility in a 2.0 cm2/Vs saturation regime and Ion/Ioff value of 1 × 108 and showed enhancement mode operation. The decreased oxygen vacancy inside SnO2 TFTs with 0.5 wt% Li dopant improved the negative bias stability of TFTs.

scholarly journals Sol-Gel Processed Yttrium-Doped SnO2 Thin Film Transistors

Electronics ◽  
2020 ◽  
Vol 9 (2) ◽  
pp. 254 ◽  
Author(s):  
Changmin Lee ◽  
Won-Yong Lee ◽  
Hyunjae Lee ◽  
Seunghyun Ha ◽  
Jin-Hyuk Bae ◽  
...  
Keyword(s):  
Thin Film ◽  
Oxygen Vacancy ◽  
Electrical Transport ◽  
Thin Film Transistors ◽  
Vacancy Concentration ◽  
Operation Mode ◽  
Sol Gel ◽  
Sno2 Thin Film ◽  
Oxygen Vacancy Concentration ◽  
Electrical Transport Properties

Y-doped SnO2 thin film transistors were successfully fabricated by means of sol-gel process. The effect of Y concentration on the structural, chemical, and electrical properties of sol-gel-processed SnO2 films was investigated via GIXRD, SPM, and XPS; the corresponding electrical transport properties of the film were also evaluated. The dopant, Y, can successfully control the free carrier concentration by suppressing the formation of oxygen vacancy inside SnO2 semiconductors due to its lower electronegativity and SEP. With an increase of Ywt%, it was observed that the crystallinity and oxygen vacancy concentration decreased, and the operation mode of SnO2 thin film transistor changed from accumulation (normally on) to enhancement mode (normally off) with a positive Vth shift.

scholarly journals Effect of Annealing Ambient on SnO2 Thin Film Transistors Fabricated via An Ethanol-based Sol-gel Route

Electronics ◽  
2019 ◽  
Vol 8 (9) ◽  
pp. 955 ◽  
Author(s):  
Hyunjae Lee ◽  
Seunghyun Ha ◽  
Jin-Hyuk Bae ◽  
In-Man Kang ◽  
Kwangeun Kim ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Field Effect ◽  
High Performance ◽  
Structural Characteristics ◽  
Sol Gel ◽  
Critical Role ◽  
Sno2 Thin Film ◽  
Field Effect Mobility ◽  
Current Ratio

The effect of annealing ambient on SnO2 thin-film transistors (TFTs) fabricated via an ethanol-based sol-gel route was investigated. The annealing ambient has a significant effect on the structural characteristics and chemical composition and, in turn, the device performance. Although the crystalline-grain size of the SnO2 films annealed in air was the smallest, this size yielded the highest field-effect mobility. Compared with the minimization of boundary scattering via crystalline-size increase, augmentation of the free carrier concentration played a more critical role in the realization of high-performance devices. The fabricated SnO2 TFTs delivered a field-effect mobility, subthreshold swing, and on/off current ratio of 10.87 cm2/Vs, 0.87 V/decade, and 107, respectively.

Improved negative bias stability of sol–gel processed Ti-doped SnO2 thin-film transistors

2020 ◽  
Vol 35 (11) ◽  
pp. 115023
Author(s):  
Won-Yong Lee ◽  
Hyunjae Lee ◽  
Seunghyun Ha ◽  
Changmin Lee ◽  
Jin-Hyuk Bae ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Sol Gel ◽  
Sno2 Thin Film ◽  
Negative Bias ◽  
Bias Stability

Extremely Bias Stress Stable Enhancement Mode Sol–Gel-Processed SnO2 Thin-Film Transistors with Y2O3 Passivation Layers

2021 ◽  
pp. 149971
Author(s):  
Changmin Lee ◽  
Won-Yong Lee ◽  
Do Won Kim ◽  
Hyeon Joong Kim ◽  
Jin-Hyuk Bae ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Sol Gel ◽  
Sno2 Thin Film ◽  
Bias Stress ◽  
Enhancement Mode ◽  
Passivation Layers

scholarly journals Enhancement Mode Flexible SnO2 Thin Film Transistors Via a UV/Ozone-Assisted Sol-Gel Approach

IEEE Access ◽  
2020 ◽  
Vol 8 ◽  
pp. 123013-123018
Author(s):  
Bongho Jang ◽  
Hongki Kang ◽  
Won-Yong Lee ◽  
Jin-Hyuk Bae ◽  
In-Man Kang ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Sol Gel ◽  
Sno2 Thin Film ◽  
Enhancement Mode ◽  
Uv Ozone

Densification Control as a Method of Improving the Ambient Stability of Sol–Gel-Processed SnO2 Thin-Film Transistors

2019 ◽  
Vol 40 (6) ◽  
pp. 905-908 ◽  
Author(s):  
Won-Yong Lee ◽  
Seung Hyun Ha ◽  
Hyunjae Lee ◽  
Jin-Hyuk Bae ◽  
Bongho Jang ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Sol Gel ◽  
Sno2 Thin Film

High Performance Ultrathin SnO2 Thin-Film Transistors by Sol–Gel Method

2018 ◽  
Vol 39 (8) ◽  
pp. 1179-1182 ◽  
Author(s):  
Bongho Jang ◽  
Taegyun Kim ◽  
Sojeong Lee ◽  
Won-yong Lee ◽  
Hongki Kang ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
High Performance ◽  
Sol Gel ◽  
Sno2 Thin Film ◽  
Gel Method ◽  
Sol Gel Method

scholarly journals Influence of Active Channel Layer Thickness on SnO2 Thin-Film Transistor Performance

Electronics ◽  
2021 ◽  
Vol 10 (2) ◽  
pp. 200
Author(s):  
Do Won Kim ◽  
Hyeon Joong Kim ◽  
Changmin Lee ◽  
Kyoungdu Kim ◽  
Jin-Hyuk Bae ◽  
...  
Keyword(s):  
Thin Film ◽  
Field Effect ◽  
Thin Film Transistor ◽  
Sol Gel ◽  
Precursor Concentration ◽  
Sno2 Thin Film ◽  
Field Effect Mobility ◽  
Si Substrates ◽  
Channel Layer ◽  
Active Channel

Sol-gel processed SnO2 thin-film transistors (TFTs) were fabricated on SiO2/p+ Si substrates. The SnO2 active channel layer was deposited by the sol-gel spin coating method. Precursor concentration influenced the film thickness and surface roughness. As the concentration of the precursor was increased, the deposited films were thicker and smoother. The device performance was influenced by the thickness and roughness of the SnO2 active channel layer. Decreased precursor concentration resulted in a fabricated device with lower field-effect mobility, larger subthreshold swing (SS), and increased threshold voltage (Vth), originating from the lower free carrier concentration and increase in trap sites. The fabricated SnO2 TFTs, with an optimized 0.030 M precursor, had a field-effect mobility of 9.38 cm2/Vs, an SS of 1.99, an Ion/Ioff value of ~4.0 × 107, and showed enhancement mode operation and positive Vth, equal to 9.83 V.

Pentacene thin-film transistors with sol–gel derived amorphous Ba0.6Sr0.4TiO3 gate dielectric

2008 ◽  
Vol 85 (2) ◽  
pp. 414-418 ◽  
Author(s):  
Wei Wang ◽  
Guifang Dong ◽  
Liduo Wang ◽  
Yong Qiu
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Gate Dielectric ◽  
Sol Gel
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