Extremely Bias Stress Stable Enhancement Mode Sol–Gel-Processed SnO2 Thin-Film Transistors with Y2O3 Passivation Layers

In this study, sol–gel-processed Li-doped SnO2-based thin-film transistors (TFTs) were fabricated on SiO2/p+ Si substrates. The influence of Li dopant (wt%) on the structural, chemical, optical, and electrical characteristics was investigated. By adding 0.5 wt% Li dopant, the oxygen vacancy formation process was successfully suppressed. Its smaller ionic size and strong bonding strength made it possible for Li to work as an oxygen vacancy suppressor. The fabricated TFTs consisting of 0.5 wt% Li-doped SnO2 semiconductor films delivered the field-effect mobility in a 2.0 cm2/Vs saturation regime and Ion/Ioff value of 1 × 108 and showed enhancement mode operation. The decreased oxygen vacancy inside SnO2 TFTs with 0.5 wt% Li dopant improved the negative bias stability of TFTs.

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Sol-Gel Processed Yttrium-Doped SnO2 Thin Film Transistors

Electronics ◽

10.3390/electronics9020254 ◽

2020 ◽

Vol 9 (2) ◽

pp. 254 ◽

Cited By ~ 2

Author(s):

Changmin Lee ◽

Won-Yong Lee ◽

Hyunjae Lee ◽

Seunghyun Ha ◽

Jin-Hyuk Bae ◽

...

Keyword(s):

Thin Film ◽

Oxygen Vacancy ◽

Electrical Transport ◽

Thin Film Transistors ◽

Vacancy Concentration ◽

Operation Mode ◽

Sol Gel ◽

Sno2 Thin Film ◽

Oxygen Vacancy Concentration ◽

Electrical Transport Properties

Y-doped SnO2 thin film transistors were successfully fabricated by means of sol-gel process. The effect of Y concentration on the structural, chemical, and electrical properties of sol-gel-processed SnO2 films was investigated via GIXRD, SPM, and XPS; the corresponding electrical transport properties of the film were also evaluated. The dopant, Y, can successfully control the free carrier concentration by suppressing the formation of oxygen vacancy inside SnO2 semiconductors due to its lower electronegativity and SEP. With an increase of Ywt%, it was observed that the crystallinity and oxygen vacancy concentration decreased, and the operation mode of SnO2 thin film transistor changed from accumulation (normally on) to enhancement mode (normally off) with a positive Vth shift.

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The Impact of Active Layer Pre-Treatment on Bias Stress Stability of Sol-gel Derived Amorphous Indium-Gallium-Zinc-Oxide Thin Film Transistors

ECS Meeting Abstracts ◽

10.1149/ma2011-02/31/2113 ◽

2011 ◽

Keyword(s):

Thin Film ◽

Thin Film Transistors ◽

Sol Gel ◽

Oxide Thin Film ◽

Indium Gallium Zinc Oxide ◽

Zinc Oxide Thin Film ◽

Bias Stress ◽

Indium Gallium ◽

Pre Treatment ◽

The Impact

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Effect of Annealing Ambient on SnO2 Thin Film Transistors Fabricated via An Ethanol-based Sol-gel Route

Electronics ◽

10.3390/electronics8090955 ◽

2019 ◽

Vol 8 (9) ◽

pp. 955 ◽

Cited By ~ 4

Author(s):

Hyunjae Lee ◽

Seunghyun Ha ◽

Jin-Hyuk Bae ◽

In-Man Kang ◽

Kwangeun Kim ◽

...

Keyword(s):

Thin Film ◽

Thin Film Transistors ◽

Field Effect ◽

High Performance ◽

Structural Characteristics ◽

Sol Gel ◽

Critical Role ◽

Sno2 Thin Film ◽

Field Effect Mobility ◽

Current Ratio

The effect of annealing ambient on SnO2 thin-film transistors (TFTs) fabricated via an ethanol-based sol-gel route was investigated. The annealing ambient has a significant effect on the structural characteristics and chemical composition and, in turn, the device performance. Although the crystalline-grain size of the SnO2 films annealed in air was the smallest, this size yielded the highest field-effect mobility. Compared with the minimization of boundary scattering via crystalline-size increase, augmentation of the free carrier concentration played a more critical role in the realization of high-performance devices. The fabricated SnO2 TFTs delivered a field-effect mobility, subthreshold swing, and on/off current ratio of 10.87 cm2/Vs, 0.87 V/decade, and 107, respectively.

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Optoelectronic Properties of Sol-gel Processed SnO2 Thin Film Transistors

Journal of Sensor Science and Technology ◽

10.46670/jsst.2020.29.5.328 ◽

2020 ◽

Vol 29 (5) ◽

pp. 328-331

Author(s):

Changmin Lee ◽

Jaewon Jang

Keyword(s):

Thin Film ◽

Thin Film Transistors ◽

Sol Gel ◽

Optoelectronic Properties ◽

Sno2 Thin Film

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Improved negative bias stability of sol–gel processed Ti-doped SnO2 thin-film transistors

Semiconductor Science and Technology ◽

10.1088/1361-6641/abb9fe ◽

2020 ◽

Vol 35 (11) ◽

pp. 115023

Author(s):

Won-Yong Lee ◽

Hyunjae Lee ◽

Seunghyun Ha ◽

Changmin Lee ◽

Jin-Hyuk Bae ◽

...

Keyword(s):

Thin Film ◽

Thin Film Transistors ◽

Sol Gel ◽

Sno2 Thin Film ◽

Negative Bias ◽

Bias Stability

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Highly reliable passivation layer for a-InGaZnO thin-film transistors fabricated using polysilsesquioxane

MRS Proceedings ◽

10.1557/opl.2014.118 ◽

2014 ◽

Vol 1633 ◽

pp. 139-144 ◽

Cited By ~ 6

Author(s):

Juan Paolo Bermundo ◽

Yasuaki Ishikawa ◽

Haruka Yamazaki ◽

Toshiaki Nonaka ◽

Yukiharu Uraoka

Keyword(s):

Thin Film ◽

Thin Film Transistors ◽

Reactive Ion Etching ◽

Annealing Treatment ◽

Negative Bias ◽

Positive Bias ◽

Ion Etching ◽

Bias Stress ◽

Passivation Layers ◽

Negative Bias Illumination Stress

ABSTRACTPolysilsesquioxane passivation layers were used to passivate bottom gate a-InGaZnO (a-IGZO) thin film transistors (TFT). The a-IGZO TFTs passivated with polysilsesquioxane showed highly stable behavior during positive bias stress, negative bias stress, and negative bias illumination stress. A voltage threshold shift of up to 0.1 V, less than -0.1 V and -2.3 V for positive bias stress, negative bias stress, and negative bias illumination stress, respectively. We also report the effect of reactive ion etching (RIE) on the electrical characteristics of a-InGaZnO (a-IGZO) thin-film transistors (TFT) passivated with the polysilsesquioxane-based passivation layers. We show how post-annealing treatment using two different atmosphere conditions: under O2 ambient and combination of N2 and O2 ambient (20% O2), can be performed to recover the initial characteristics. Furthermore, we present a highly stable novel polysilsesquioxane photosensitive passivation material that can be used to completely circumvent the reactive ion etching effects.

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