Effect of Annealing Ambient on SnO2 Thin Film Transistors Fabricated via An Ethanol-based Sol-gel Route

The effect of annealing ambient on SnO2 thin-film transistors (TFTs) fabricated via an ethanol-based sol-gel route was investigated. The annealing ambient has a significant effect on the structural characteristics and chemical composition and, in turn, the device performance. Although the crystalline-grain size of the SnO2 films annealed in air was the smallest, this size yielded the highest field-effect mobility. Compared with the minimization of boundary scattering via crystalline-size increase, augmentation of the free carrier concentration played a more critical role in the realization of high-performance devices. The fabricated SnO2 TFTs delivered a field-effect mobility, subthreshold swing, and on/off current ratio of 10.87 cm2/Vs, 0.87 V/decade, and 107, respectively.

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High Performance of Y-doped Sn-Zn-O Films Fabricated by Solution-process for Amorphous Thin Film Transistors

MRS Proceedings ◽

10.1557/opl.2014.16 ◽

2014 ◽

Vol 1630 ◽

Author(s):

Yunxuan Yu ◽

Xian Gong ◽

Dong Liu ◽

Yan Wang ◽

Jinfeng Kang

Keyword(s):

Thin Film ◽

Thin Film Transistors ◽

Field Effect ◽

High Performance ◽

Sol Gel ◽

Solution Process ◽

Field Effect Mobility ◽

Amorphous Thin Film ◽

Sol Gel Process ◽

Active Channel

ABSTRACTThe effect of Y dopant incorporated into ZTO with different Y ratios in Y-ZTO system on the performances of ZTO-based TFTs is investigated by using sol-gel process. The proper Y doped ZTO present both high film crystallization temperature and superior electrical properties as an active channel layer of TFTs. The fabricated YZTO-based TFTs with 11% Y show the excellent devices performance such as the channel field effect mobility of 1.756 cm2/Vs, SS of 2.13 V/dec, threshold voltage of 0.8V and on/off ratio of 3.12×106.

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Influence of Active Channel Layer Thickness on SnO2 Thin-Film Transistor Performance

Electronics ◽

10.3390/electronics10020200 ◽

2021 ◽

Vol 10 (2) ◽

pp. 200

Author(s):

Do Won Kim ◽

Hyeon Joong Kim ◽

Changmin Lee ◽

Kyoungdu Kim ◽

Jin-Hyuk Bae ◽

...

Keyword(s):

Thin Film ◽

Field Effect ◽

Thin Film Transistor ◽

Sol Gel ◽

Precursor Concentration ◽

Sno2 Thin Film ◽

Field Effect Mobility ◽

Si Substrates ◽

Channel Layer ◽

Active Channel

Sol-gel processed SnO2 thin-film transistors (TFTs) were fabricated on SiO2/p+ Si substrates. The SnO2 active channel layer was deposited by the sol-gel spin coating method. Precursor concentration influenced the film thickness and surface roughness. As the concentration of the precursor was increased, the deposited films were thicker and smoother. The device performance was influenced by the thickness and roughness of the SnO2 active channel layer. Decreased precursor concentration resulted in a fabricated device with lower field-effect mobility, larger subthreshold swing (SS), and increased threshold voltage (Vth), originating from the lower free carrier concentration and increase in trap sites. The fabricated SnO2 TFTs, with an optimized 0.030 M precursor, had a field-effect mobility of 9.38 cm2/Vs, an SS of 1.99, an Ion/Ioff value of ~4.0 × 107, and showed enhancement mode operation and positive Vth, equal to 9.83 V.

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Instability of OTFT with Organic Gate Dielectrics

Solid State Phenomena ◽

10.4028/www.scientific.net/ssp.124-126.407 ◽

2007 ◽

Vol 124-126 ◽

pp. 407-410

Author(s):

Sang Chul Lim ◽

Seong Hyun Kim ◽

Gi Heon Kim ◽

Jae Bon Koo ◽

Jung Hun Lee ◽

...

Keyword(s):

Thin Film ◽

Thin Film Transistors ◽

Field Effect ◽

Gate Dielectrics ◽

Gate Insulator ◽

Semiconductor Layer ◽

Field Effect Mobility ◽

Current Ratio ◽

Dielectric Thickness ◽

Inverter Circuit

We report the effects of instability with gate dielectrics of pentacene thin film transistors (OTFTs) inverter circuits. We used to the UV sensitive curable resin and poly-4-vinylphenol(PVP) by gate dielectrics. The inverter supply bias is VDD= -40 V. For a given dielectric thickness and applied voltage, pentacene OTFTs with inverter circuits measurements field effect mobility, on-off current ratio, Vth. The field effect mobility 0.03~0.07 cm2/Vs, and the threshold voltage is -3.3 V ~ -8.8 V. The on- and off-state currents ratio is about 103~106. From the OTFT device and inverter circuit measurement, we observed hysteresis behavior was caused by interface states of between the gate insulator and the pentacene semiconductor layer.

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Thin Film Transistors on Plastic Substrates Using Silicon Deposited by Microwave ECR-CVD

MRS Proceedings ◽

10.1557/proc-769-h2.4 ◽

2003 ◽

Vol 769 ◽

Author(s):

Lihong Teng ◽

Wayne A. Anderson

Keyword(s):

Thin Film ◽

Threshold Voltage ◽

Thin Film Transistors ◽

Field Effect ◽

Silicon Films ◽

Subthreshold Swing ◽

Field Effect Mobility ◽

Current Ratio ◽

Saturation Field ◽

Plastic Substrates

AbstractThe properties of thin film transistors (TFT's) on plastic substrates with active silicon films deposited by microwave ECR-CVD were studied. Two types of plastic were used, PEEK and polyimide. The a-Si:H TFT deposited at 200°C on polyimide substrates showed a saturation field effect mobility of 4.5 cm2/V-s, a threshold voltage of 3.7 V, a subthreshold swing of 0.69 V/dec and an ON/OFF current ratio of 7.9×106, while the TFT fabricated on PEEK at 200°C showed a saturation field effect mobility of 3.9 cm2/V-s, a threshold voltage of 4.1 V, a subthreshold swing of 0.73 V/dec and an ON/OFF current ratio of 4×106. Comparison is made to TFT's with the Si deposited at 400°C on glass.

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Dependence of Field-Effect Mobility on Deposition Conditions in a-Si:H TFT

MRS Proceedings ◽

10.1557/proc-336-817 ◽

1994 ◽

Vol 336 ◽

Cited By ~ 1

Author(s):

Y. Chida ◽

M. Kondo ◽

G. Ganguly ◽

A. Matsuda

Keyword(s):

Thin Film ◽

Thin Film Transistors ◽

Field Effect ◽

High Performance ◽

High Mobility ◽

High Electron ◽

Field Effect Mobility ◽

Si Substrate ◽

High Electron Mobility ◽

Deposition Conditions

ABSTRACTHigh electron Mobility (over 3 cm2/Vs) thin film transistors (TFTs) have been fabricated using a-Si:H on thermally oxidized crystalline Si substrate. The procedures for fabricating the high performance TFTs are presented and the possible reasons for the high mobility are discussed.

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High-Performance Submicrometer ZnON Thin-Film Transistors With Record Field-Effect Mobility

IEEE Electron Device Letters ◽

10.1109/led.2016.2518404 ◽

2016 ◽

Vol 37 (3) ◽

pp. 303-305 ◽

Cited By ~ 14

Author(s):

Chin-I Kuan ◽

Horng-Chih Lin ◽

Pei-Wen Li ◽

Tiao-Yuan Huang

Keyword(s):

Thin Film ◽

Thin Film Transistors ◽

Field Effect ◽

High Performance ◽

Field Effect Mobility

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The Role of Dual-Stacked Oxide Semiconductor in High Performance Thin Film Transistors

10.21203/rs.3.rs-75183/v1 ◽

2020 ◽

Author(s):

Youn Sang Kim ◽

Changik Im ◽

Nam-Kwang Cho ◽

Jintaek Park ◽

Eun Goo Lee ◽

...

Keyword(s):

Thin Film ◽

Thin Film Transistors ◽

Field Effect ◽

High Performance ◽

Oxide Semiconductor ◽

Oxide Thin Film ◽

Band Offset ◽

Indium Gallium Zinc Oxide ◽

Field Effect Mobility ◽

Display Resolution

Abstract Oxide thin film transistors (TFTs) have attracted much attention because they can be applied to flexible and large-scaled switching devices. Especially, Oxide semiconductors (OSs) have been developed as active layers of TFTs and, among them, Indium-Gallium-Zinc-Oxide (IGZO) is actively used in the OLED display field. However, IGZO TFTs are limited by low field-effect mobility, which critically affects display resolution and power consumption, despite superior off-state properties. Herein, we prevailed new working mechanisms in dual-stacked OS and, based on this, developed dual-stacked OS-based TFT with high field-effect mobility (~80 cm2/V·s), ideal threshold voltage near 0 V, high on-off current ratio (>109), and good stability at bias stress. In dual-stacked OS, induced areas are formed at interface by band-offset: band-offset-induced area (BOIA) and BOIA-induced area (BIA). They connect gate-bias-induced area (GBIA) and electrode-bias-induced area (EBIA), resulting in high current flow. Such mechanism will provide new design rules for high performance OS-based TFTs.

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High Performance Polymer Thin Film Transistors Array Printed on a Flexible Polycarbonate Substrate

MRS Proceedings ◽

10.1557/proc-736-d7.3 ◽

2002 ◽

Vol 736 ◽

Cited By ~ 6

Author(s):

Sung Kyu Park ◽

Jeong In Han ◽

Dae Gyu Moon ◽

Won Keun Kim ◽

Yong Hoon Kim

Keyword(s):

Thin Film ◽

Plasma Treatment ◽

Thin Film Transistors ◽

Field Effect ◽

High Performance ◽

Field Effect Mobility ◽

Semiconductor Interface ◽

Contact Printing ◽

Saturation Field ◽

Polycarbonate Substrate

ABSTRACTHigh performance poly (3-hexylthiophene) (P3HT) thin film transistors (TFTs) array was fabricated on a polycarbonate substrate by micro-contact printing method. A thin polyimide layer (40 nm) was applied before silicon oxide deposition to improve the electrical properties of the TFT device. Also, the effects of O2 plasma treatment on the field effect mobility and output current behaviors of the devices were investigated. By plasma treatment, the surface roughness of gate dielectric was improved which accounts for the increased field effect mobility and the hole Schottky barrier height in electrode/semiconductor interface was lowered resulting in large drain current in the device. Based on the experiments, we fabricated P3HT TFTs array with 0.025 cm2/V·s in saturation field effect mobility and on/off current ratio of 103 ∼ 104 on a polycarbonate substrate.

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