scholarly journals Simulation and Comparison of Current Voltage Characteristics of Si and Ge based Bio Field Effect Transistor by Varying Oxide Thickness to Get Better Sensitivity

2021 ◽  
Vol 11 (2) ◽  
pp. 1066-1083
Author(s):  
S. Layasree
Keyword(s):  
Field Effect Transistor ◽  
Electrical Conductance ◽  
Oxide Thickness ◽  
Simulation Environment ◽  
Current Voltage ◽  
Gate Oxide Thickness ◽  
Maximum Conductivity ◽  
Current Voltage Characteristics ◽  
Effect Transistor ◽  
Silicon Based

Aim: The current voltage characteristics of Silicon based BIOFET and Germanium based BIOFET are simulated by varying their oxide thickness ranging from 1nm to 100nm. Materials and Methods: The electrical conductance of Silicon based BIOFET (n=320) was compared with Germanium based BIOFET (n=320) by varying oxide thickness ranging from 1nm to 100nm in the NanoHub© tool simulation environment. Results: Germanium based BIOFET has significantly higher conductance than Silicon based BIOFET. The optimal gate oxide thickness for maximum conductivity was 1nm for Silicon based BIOFET and 35nm for Germanium based BIOFET. Conclusion: Within the limits of the study, Germanium based BIOFET with oxide thickness of 35nm offers the best conductivity.

scholarly journals Simulation of Carbon Nanotube based Field Effect Transistor by Varying Gate Oxide Thickness to Explore its Electrical Property and Compare it with Standard Mosfet

2021 ◽  
Vol 11 (2) ◽  
pp. 1549-1566
Author(s):  
Morupuri Satish Kumar Reddy
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Electrical Conductance ◽  
Gate Oxide ◽  
Oxide Thickness ◽  
Simulation Environment ◽  
Optimal Thickness ◽  
Gate Oxide Thickness ◽  
Maximum Conductivity ◽  
Effect Transistor

Aim: The current and voltage characteristics of CNTFET and MOSFET are simulated by varying their gate oxide thickness ranging from 3.5nm to 11.5nm. Materials and Methods: The electrical conductance of CNTFET (n = 320) was compared with MOSFET (n = 320) by varying gate oxide thickness ranging from 3.5nm to 11.5nm in the NanoHUB© tool simulation environment. Results: CNTFET has significantly higher conductance (12.52 mho) than MOSFET (12.07 mho). The optimal thickness for maximum conductivity was 4nm for CNTFET and 3.5 nm for MOSFET. Conclusion: Within the limits of this study, CNTFET with the gate oxide thickness of 4 nm offers the best conductivity.

scholarly journals SIMULATING CHARACTERISTICS OF CARBON NANOTUBE FIELD- EFFECT TRANSISTOR (CNTFET)

2010 ◽  
Vol 13 (2) ◽  
pp. 15-27
Author(s):  
Hien Sy Dinh ◽  
Tuan Tran Anh Thi ◽  
Luong Thi Nguyen
Keyword(s):  
Field Effect Transistor ◽  
Oxide Thickness ◽  
Capacitive Coupling ◽  
Graphic User Interface ◽  
Current Voltage ◽  
Gate Oxide Thickness ◽  
Calculation Results ◽  
Current Voltage Characteristics ◽  
Effect Transistor ◽  
Non Equilibrium Green’S Function

We provide a model of coaxial CNTFET, using single wall nanotube. These devices would exhibit wrap-around gates that maximize capacitive coupling between the gate electrode and the nanotube channel. The results of simulations of I-V characteristics for CNTFETs are presented. Here we use non-equilibrium Green’s function (NEGF) to perform simulation for CNTFET. This simulator also includes a graphic user interface (GUI) of Matlab that enables parameter entry, calculation control, display of calculation results. In this work, we review the capabilities of the simulator, summarize the theoretical approach and experimental results. Current-voltage characteristics are a function of the variables such as: diameter of CNT, the length of CNT, the gate oxide thickness, gate voltage of Vg, types of materials of Source-Drain, Gate, and temperature. The obtained I-V characteristics of the CNTFET are also presented by analytical equations.

scholarly journals SIMULATING CURRENT - VOLTAGE CHARACTERISTICS OF MOLECULAR TRANSISTOR FIELD EFFECT TRANSISTOR

2009 ◽  
Vol 12 (13) ◽  
pp. 5-12
Author(s):  
Hien Sy Dinh ◽  
Trung Hoang Huynh
Keyword(s):  
Field Effect ◽  
High Speed ◽  
Field Effect Transistor ◽  
Promising Alternative ◽  
Current Voltage ◽  
Significant Difference ◽  
Current Voltage Characteristics ◽  
Effect Transistor ◽  
Non Equilibrium Green’S Function ◽  
Material Temperature

Molecular Field Effect Transistor (MFET) is a promising alternative candidate of traditional MOSFET in future due to its small size, low power consumption and high speed. In this work, we introduce a model of three-terminal MFET. The structure of the MFET is in shape like traditional MOSFET, but its conductive channel is replaced by a benzene-1,4-dithiolate molecule. We use non-equilibrium Green's function method to compute transport function of charges and ultimately, the current-voltage (1-V) characteristics. The program is written by using graphic user guide (GUI) in Matlab. We have found significant difference of I-V characteristics between MOSFET and MFET. In addition, impacts of types of material, temperature, and bias on I-V characteristics of the MFET have been considered. Using GUI in Matlab, obtained results of simulations are intuitively displayed.

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