scholarly journals PERENCANAAN GEDUNG BERLANTAI BANYAK DENGAN METODE SISTEM RANGKA PEMIKUL MOMEN KHUSUS (SRPMK) KABUPATEN TANA TORAJA

2021 ◽  
Vol 6 (1) ◽  
pp. 1-6
Author(s):  
Hernita Matana ◽  
Parea Rusan Rangan ◽  
Bastian A AmpangAllo
Keyword(s):  
Weak Beam

Perencanaan struktur bangunan tahan gempa sangat penting di Indonesia. Kabupaten Tana Toraja termasuk KDS-D dengan  kategori resiko I  dalam kelas situs SD. Sehingga metode Sistem Rangka Pemikul Momen Khusus (SRPMK) dapat digunakan dalam perencanaan. Perencanaan struktur gedung ini menggunakan konsep desain kapasitas berupa kolom kuat balok lemah. saat terjadi gempa yang kuat dengan metode tersebut diharapkan gedung ini tidak mengalami keruntuhan total. Dalam perencanaan ini, bangunan yang direncanakan adalah bangunan fiktif 15 lantai menggunakan beton bertulang dengan panjang bangunan 40 m, lebar bangunan 14 m, tinggi 55.8 m dengan fungsi sebagai hotel. Perencanaan dan perhitungan struktur gedung ini ditinjau terhadap beban mati, beban hidup, dan beban gempa. Perhitungan beban mati dan beban hidup mengikuti persyaratan SNI 1727-2013, dan beban gempa dianalisis secara statik dan dinamis mengikuti persyaratan SNI 1726-2012. Untuk analisa struktur bangunan digunakan aplikasi SAP2000V21. Hasil analisis dan desain menunjukkan dimensi balok dan kolom telah memenuhi kriteria penampang untuk SRPMK, dimana syarat “strong column weak beam” telah terpenuhi.   Kata kunci : SRPMK, Gempa, Beton bertulang, Kolom kuat balok lemah

Two Investigations into Grain Boundary Structure

1977 ◽  
Vol 35 ◽  
pp. 688-691
Author(s):  
P. Humble
Keyword(s):  
Grain Boundary ◽  
Dark Field ◽  
Boundary Structure ◽  
Boundary Dislocation ◽  
Bright Field ◽  
Intrinsic Structure ◽  
Weak Beam ◽  
Grain Boundary Structure ◽  
Independent Information ◽  
Diffraction Patterns

There has been sustained interest over the last few years into both the intrinsic (primary and secondary) structure of grain boundaries and the extrinsic structure e.g. the interaction of matrix dislocations with the boundary. Most of the investigations carried out by electron microscopy have involved only the use of information contained in the transmitted image (bright field, dark field, weak beam etc.). Whilst these imaging modes are appropriate to the cases of relatively coarse intrinsic or extrinsic grain boundary dislocation structures, it is apparent that in principle (and indeed in practice, e.g. (1)-(3)) the diffraction patterns from the boundary can give extra independent information about the fine scale periodic intrinsic structure of the boundary.In this paper I shall describe one investigation into each type of structure using the appropriate method of obtaining the necessary information which has been carried out recently at Tribophysics.

Weak Beam Imaging and Diffraction Studies of Stacking Faults in Silicon

1976 ◽  
Vol 34 ◽  
pp. 590-591
Author(s):  
T. Y. Tan ◽  
W. K. Tice
Keyword(s):  
Fast Neutron ◽  
Rapid Determination ◽  
Stacking Faults ◽  
Imaging Method ◽  
Large Reduction ◽  
Dislocation Loops ◽  
Fringe Spacing ◽  
Weak Beam ◽  
Kinematical Theory

In studying ion implanted semiconductors and fast neutron irradiated metals, the need for characterizing small dislocation loops having diameters of a few hundred angstrom units usually arises. The weak beam imaging method is a powerful technique for analyzing these loops. Because of the large reduction in stacking fault (SF) fringe spacing at large sg, this method allows for a rapid determination of whether the loop is faulted, and, hence, whether it is a perfect or a Frank partial loop. This method was first used by Bicknell to image small faulted loops in boron implanted silicon. He explained the fringe spacing by kinematical theory, i.e., ≃l/(Sg) in the fault fringe in depth oscillation. The fault image contrast formation mechanism is, however, really more complicated.

TEM Study of a Tilt Boundary in Hot-Pressed Silicon

1981 ◽  
Vol 39 ◽  
pp. 160-161
Author(s):  
C. B. Carter ◽  
J. Rose ◽  
D. G. Ast
Keyword(s):  
Electron Diffraction ◽  
Imaging Technique ◽  
Interface Structure ◽  
Large Area ◽  
Weak Beam ◽  
Lattice Fringe ◽  
Electron Diffraction Technique ◽  
Tilt Boundaries ◽  
Beam Technique ◽  
Twist Boundaries

The hot-pressing technique which has been successfully used to manufacture twist boundaries in silicon has now been used to form tilt boundaries in this material. In the present study, weak-beam imaging, lattice-fringe imaging and electron diffraction techniques have been combined to identify different features of the interface structure. The weak-beam technique gives an overall picture of the geometry of the boundary and in particular allows steps in the plane of the boundary which are normal to the dislocation lines to be identified. It also allows pockets of amorphous SiO2 remaining in the interface to be recognized. The lattice-fringe imaging technique allows the boundary plane parallel to the dislocation to be identified. Finally the electron diffraction technique allows the periodic structure of the boundary to be evaluated over a large area - this is particularly valuable when the dislocations are closely spaced - and can also provide information on the structural width of the interface.

A Many-Beam Technique for Enhanced Resolution of Partial Dislocations

1972 ◽  
Vol 30 ◽  
pp. 646-647
Author(s):  
J. M. Oblak ◽  
B. H. Kear
Keyword(s):  
Phase Shift ◽  
Field Method ◽  
Dark Field ◽  
Bright Field ◽  
Field Technique ◽  
Weak Beam ◽  
Partial Dislocations ◽  
Enhanced Resolution ◽  
Nickel Base ◽  
Beam Technique

The “weak-beam” and systematic many-beam techniques are the currently available methods for resolution of closely spaced dislocations or other inhomogeneities imaged through strain contrast. The former is a dark field technique and image intensities are usually very weak. The latter is a bright field technique, but generally use of a high voltage instrument is required. In what follows a bright field method for obtaining enhanced resolution of partial dislocations at 100 KV accelerating potential will be described.A brief discussion of an application will first be given. A study of intermediate temperature creep processes in commercial nickel-base alloys strengthened by the Ll2 Ni3 Al γ precipitate has suggested that partial dislocations such as those labelled 1 and 2 in Fig. 1(a) are in reality composed of two closely spaced a/6 <112> Shockley partials. Stacking fault contrast, when present, tends to obscure resolution of the partials; thus, conditions for resolution must be chosen such that the phase shift at the fault is 0 or a multiple of 2π.

Inelastic Electron Scattering from Valence Electrons in Aluminum

1976 ◽  
Vol 34 ◽  
pp. 462-463
Author(s):  
P. E. Batson ◽  
C. H. Chen ◽  
J. Silcox
Keyword(s):  
Electron Scattering ◽  
Single Scattering ◽  
Three Dimensions ◽  
Inelastic Electron ◽  
Weak Beam ◽  
Scattering Spectrum ◽  
Valence Electrons ◽  
Diffraction Patterns ◽  
Electronic Scattering

We wish to report in this paper measurements of the inelastic scattering component due to the collective excitations (plasmons) and single particlehole excitations of the valence electrons in Al. Such scattering contributes to the diffuse electronic scattering seen in electron diffraction patterns and has recently been considered of significance in weak-beam images (see Gai and Howie) . A major problem in the determination of such scattering is the proper correction for multiple scattering. We outline here a procedure which we believe suitably deals with such problems and report the observed single scattering spectrum.In principle, one can use the procedure of Misell and Jones—suitably generalized to three dimensions (qx, qy and #x2206;E)--to derive single scattering profiles. However, such a computation becomes prohibitively large if applied in a brute force fashion since the quasi-elastic scattering (and associated multiple electronic scattering) extends to much larger angles than the multiple electronic scattering on its own.

TEM evaluation of graded SixGe1-x heterolayers

1991 ◽  
Vol 49 ◽  
pp. 894-895
Author(s):  
N. David Theodore ◽  
Mamoru Tomozane ◽  
Ming Liaw
Keyword(s):  
Heterojunction Bipolar Transistors ◽  
Gas Flow ◽  
Field Effect Transistors ◽  
Chemical Vapor ◽  
Dark Field ◽  
Bipolar Transistors ◽  
Structural Quality ◽  
Weak Beam ◽  
Transmission Electron ◽  
And Behavior

There is extensive interest in SiGe for use in heterojunction bipolar transistors. SiGe/Si superlattices are also of interest because of their potential for use in infrared detectors and field-effect transistors. The processing required for these materials is quite compatible with existing silicon technology. However, before SiGe can be used extensively for devices, there is a need to understand and then control the origin and behavior of defects in the materials. The present study was aimed at investigating the structural quality of, and the behavior of defects in, graded SiGe layers grown by chemical vapor deposition (CVD).The structures investigated in this study consisted of Si1-xGex[x=0.16]/Si1-xGex[x= 0.14, 0.13, 0.12, 0.10, 0.09, 0.07, 0.05, 0.04, 0.005, 0]/epi-Si/substrate heterolayers grown by CVD. The Si1-xGex layers were isochronally grown [t = 0.4 minutes per layer], with gas-flow rates being adjusted to control composition. Cross-section TEM specimens were prepared in the 110 geometry. These were then analyzed using two-beam bright-field, dark-field and weak-beam images. A JEOL JEM 200CX transmission electron microscope was used, operating at 200 kV.

Spacings and Intensities of Weak-Beam Dark Field Thickness Fringes

1981 ◽  
Vol 39 ◽  
pp. 222-223
Author(s):  
M. Avalos-Borja ◽  
K. Heinemann
Keyword(s):  
Selection Criterion ◽  
Dark Field ◽  
Dynamical Theory ◽  
Bragg Condition ◽  
Weak Beam ◽  
Kinematical Theory ◽  
Equal Thickness

Weak-beam dark field (WBDF) TEM produces narrowly spaced equal-thickness fringes in wedge-shaped crystals. Using non-systematic diffraction conditions, we have shown elsewhere that simple 2-beam kinematical theory (KT) calculations yield average fringe spacings that are for most practical purposes as satisfactorily accurate as the average spacings obtained from optimized multibeam dynamical theory (DT) calculations, As Fig. 1 shows, this result holds for deviations from the Bragg condition as low as 2x10-1 nm-1, and the differences between the results from the two calculational methods become increasingly insignificant for larger excitation errors. (Unless otherwise noted, all results reported here are for gold crystals, using the 200 beam at 100 KV; the DT calculations were made for 74 beams, using the selection criterion D as discussed in ref. [3]).

On effects of non-systematic reflections on weak-beam images of partial dislocations

1991 ◽  
Vol 49 ◽  
pp. 688-689
Author(s):  
K. Z. Botros ◽  
S. S. Sheinin
Keyword(s):  
High Precision ◽  
Stacking Fault ◽  
Important Application ◽  
Stacking Fault Energy ◽  
Sharp Peak ◽  
Weak Beam ◽  
Partial Dislocations ◽  
Deviation Parameter ◽  
Beam Diffraction

The main features of weak beam images of dislocations were first described by Cockayne et al. using calculations of intensity profiles based on the kinematical and two beam dynamical theories. The feature of weak beam images which is of particular interest in this investigation is that intensity profiles exhibit a sharp peak located at a position very close to the position of the dislocation in the crystal. This property of weak beam images of dislocations has an important application in the determination of stacking fault energy of crystals. This can easily be done since the separation of the partial dislocations bounding a stacking fault ribbon can be measured with high precision, assuming of course that the weak beam relationship between the positions of the image and the dislocation is valid. In order to carry out measurements such as these in practice the specimen must be tilted to "good" weak beam diffraction conditions, which implies utilizing high values of the deviation parameter Sg.

Bright field and weak-beam images of dislocations gliding on (001) planes in F.C.C. metals

1978 ◽  
Vol 36 (1) ◽  
pp. 352-353
Author(s):  
H. P. Karnthaler ◽  
A. Korner
Keyword(s):  
Single Crystals ◽  
Dislocation Structure ◽  
Room Temperature ◽  
Stage Ii ◽  
Bright Field ◽  
Weak Beam ◽  
Standard Orientation

In f.c.c. metals slip is observed to occur generally on {111} planes. Glide dislocations on intersecting {111} planes can react with each other and form Lomer-Cottrell locks which lie along a <110> direction and are sessile since they are split on two {111} planes. Cottrell already pointed out that these dislocations could glide on {001} planes if they were not split. The first study of this phenomenon has been published recently. It is the purpose of this paper to report some interesting new details of the dislocations gliding on {001} planes in pure Ni, Cu, and Ag deformed at room temperature.Single crystals are grown with standard orientation and strained into stage II. The crystals are sliced parallel to the (001) planes. The dislocation structure is studied by TEM and the Burgers vectors ḇ and glide planes of the dislocations are determined unambiguously.In Fig.l primary P and secondary S dislocations react and form composite dislocations K.

A new dissociation mode for dislocations in silicon

1978 ◽  
Vol 36 (1) ◽  
pp. 346-347
Author(s):  
A. Ourmazd ◽  
G.R. Booker ◽  
C.J. Humphreys
Keyword(s):  
Detailed Examination ◽  
Experimental Results ◽  
Dislocation Network ◽  
Weak Beam ◽  
Phosphorus Doped

A (111) phosphorus-doped Si specimen, thinned to give a TEM foil of thickness ∼ 150nm, contained a dislocation network lying on the (111) plane. The dislocation lines were along the three <211> directions and their total Burgers vectors,ḇt, were of the type , each dislocation being of edge character. TEM examination under proper weak-beam conditions seemed initially to show the standard contrast behaviour for such dislocations, indicating some dislocation segments were undissociated (contrast A), while other segments were dissociated to give two Shockley partials separated by approximately 6nm (contrast B) . A more detailed examination, however, revealed that some segments exhibited a third and anomalous contrast behaviour (contrast C), interpreted here as being due to a new dissociation not previously reported. Experimental results obtained for a dislocation along [211] with for the six <220> type reflections using (g,5g) weak-beam conditions are summarised in the table below, together with the relevant values.

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