scholarly journals Comparison of 4-Bit SAR ADC Using Different Logic Styles in 90nm Technology

Author(s):  
Mrs. Lakshmidevi TR ◽  
Mr. K N Jeevan Reddy ◽  
Mr. Ashrith Rao ◽  
Mr. Dhanush Kashyap S ◽  
Ms. Chandini K

In recent years, we have come across a growing need for the design of low power, long battery life Successive Approximation Register (SAR) Analog-to-Digital Converters (ADC). ADCs are the major component of all the systems which need to process an analogue signal obtained from measuring real world parameters and hence they need to be efficient enough depending on the application and power constraint of the device. Speed is also an important parameter as it is used in many real time applications. The basic components of the SAR ADC can be implemented using circuits of various logics available for the logic gates, adders, comparators utilised in it. This paper presents the working of 4-bit successive approximation register analog-to-digital converters (SAR ADC) in three different logics namely, Complementary Metal Oxide Semiconductors (CMOS), Transmission Gates (TG), and Double Pass Transistors (DPL) logics, which were used in the basic components of each major block of the ADC. The aim of this paper here is to compare the various parameters such as area, power consumption and delay between the three different technologies chosen above. The SAR ADCs were implemented for this purpose in 90nm Technology using the Cadence Virtuoso Design Tool building schematics and layouts for the same and calculating the various parameters required for the above-mentioned comparison.

2020 ◽  
Vol 15 (4) ◽  
pp. 478-486
Author(s):  
Sheng-Biao An ◽  
Li-Xin Zhao ◽  
Shi-Cong Yang ◽  
Tao An ◽  
Rui-Xia Yang

This paper presents a charge redistributed successive approximation register analog-to-digital converter (SAR ADC). Compared with the traditional Digital-Analog Convertor (DAC), the power consumption of the DAC scheme is reduced by 90%, the area is reduced by 60%. The test chip fabricated in 180 nm Complementary Metal Oxide Semiconductor (CMOS) occupied an active area of 0.12 mm 2 . At 10 MS/s, a signal-to-noise and distortion ratio (SNDR) of 57.70 dB and a spurious-free dynamic range (SFDR) of 55.63 dB are measured with 1.68 Vpp differential-mode input signal. The total power consumption is 690 μW corresponding to 67 fJ/conversion step figure of merit.


2021 ◽  
Author(s):  
Daniel Junehee Lee

file:///C:/Users/MWF/Downloads/Lee, Daniel Junehee.The 8-bit digital-to-time converter (DTC) to be used for a time-mode successive-approximation register analog-to-digital converter (SAR ADC) with a minimum power consumption and silicon area is presented. The architecture and the drawbacks of a conventional voltage-mode SAR ADC are discussed. The principle of time-mode circuits and benefits of their applications to mixed-signal circuits are explained. The architecture of a time-mode SAR ADC is presented. The need for an area and power-efficient DTC to be used for a time-mode SAR ADC is discussed. The principle of a DTC is explained and prior works on a DTC are reviewed. The principle of a phase interpolator (PI), to be used for a DTC, is explained and prior works on digital PIs are reviewed. The design of the proposed DTC is presented. Each block of the proposed DTC is explained using schematic and layout views. Optimal slope of the input of the PI and the condition for linear phase interpolation are investigated. Simulation results of the proposed DTC designed in TSMC 65 nm 1.0 V CMOS technology are provided. According to simulation results with BSIM4.4 device models only, the time resolution of 0.33 ps, a maximum operation frequency of 2.53 G Hz, the power consumption of 1.38 mW, and peak differential nonlinearity (DNL) and integral nonlinearity (INL) less than 0.14 least significant bit (LSB) and 0.49 LSB, respectively, for a nominal process (TT) and a temperature condition (27 C°) are achieved.


2010 ◽  
Vol 50 (9-11) ◽  
pp. 1750-1757 ◽  
Author(s):  
Vezio Malandruccolo ◽  
Mauro Ciappa ◽  
Hubert Rothleitner ◽  
M. Hommel ◽  
Wolfgang Fichtner

2017 ◽  
Vol 27 (01) ◽  
pp. 1850015 ◽  
Author(s):  
Yuhua Liang ◽  
Zhangming Zhu

A novel energy-efficient switching scheme for successive approximation register (SAR) analog-to-digital converters (ADC) is proposed in this paper. The average switching energy of the proposed switching scheme can be reduced by 95.3%, compared with the [Formula: see text]-based scheme. Moreover, the linearity has been also improved significantly. Employing the proposed switching scheme, a 10-bit 100[Formula: see text]kS/s SAR ADC is designed in SMIC 0.18-[Formula: see text]m CMOS process. At a 0.6-V supply, the ADC consumes 43.7[Formula: see text]nW. Consequently, the figure-of-merit (FOM) is optimized to 0.58[Formula: see text]fJ/conversion-step.


2021 ◽  
Author(s):  
Daniel Junehee Lee

file:///C:/Users/MWF/Downloads/Lee, Daniel Junehee.The 8-bit digital-to-time converter (DTC) to be used for a time-mode successive-approximation register analog-to-digital converter (SAR ADC) with a minimum power consumption and silicon area is presented. The architecture and the drawbacks of a conventional voltage-mode SAR ADC are discussed. The principle of time-mode circuits and benefits of their applications to mixed-signal circuits are explained. The architecture of a time-mode SAR ADC is presented. The need for an area and power-efficient DTC to be used for a time-mode SAR ADC is discussed. The principle of a DTC is explained and prior works on a DTC are reviewed. The principle of a phase interpolator (PI), to be used for a DTC, is explained and prior works on digital PIs are reviewed. The design of the proposed DTC is presented. Each block of the proposed DTC is explained using schematic and layout views. Optimal slope of the input of the PI and the condition for linear phase interpolation are investigated. Simulation results of the proposed DTC designed in TSMC 65 nm 1.0 V CMOS technology are provided. According to simulation results with BSIM4.4 device models only, the time resolution of 0.33 ps, a maximum operation frequency of 2.53 G Hz, the power consumption of 1.38 mW, and peak differential nonlinearity (DNL) and integral nonlinearity (INL) less than 0.14 least significant bit (LSB) and 0.49 LSB, respectively, for a nominal process (TT) and a temperature condition (27 C°) are achieved.


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